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Negative-bias temperature instability cure by process optimization

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1331-1339

2006

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IEEE_Xplore

Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.MY.2.1-MY.2.5

2013

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IEEE_Xplore

Survival from cervical necrotizing fasciitis

The western journal of emergency medicine, 2015-01, Vol.16 (1), p.172-174

2015

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FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface

2012 Symposium on VLSI Technology (VLSIT), 2012, p.17-18

2012

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IEEE_Xplore

Strain stabilized metal–insulator transition in epitaxial thin films of metallic oxide CaRuO3

Applied physics letters, 1997-06, Vol.70 (22), p.3035-3037

1997

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Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

IEEE electron device letters, 2012-03, Vol.33 (3), p.351-353

2012

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IEEE_Xplore

Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

2012 International Electron Devices Meeting, 2012, p.9.6.1-9.6.4

2012

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IEEE_Xplore

Microstructural defects in bicrystal substrates and their influence on yttrium barium copper oxide grain boundary Josephson junctions

IEEE transactions on applied superconductivity, 1999-06, Vol.9 (2), p.3413-3416

1999

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IEEE_Xplore

Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs

IEEE electron device letters, 2012-05, Vol.33 (5), p.631-633

2012

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IEEE_Xplore

Magnetoresistance probe of spatial current variations in high- T c YBa2Cu3O7–SrRuO3–YBa2Cu3O7 Josephson junctions

Applied physics letters, 1995-08, Vol.67 (9), p.1313-1315

1995

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Supercurrent distributions in YBa2Cu3O7–YBa2Co0.21Cu2.79O7–YBa2Cu3O7 edge Josephson junctions

Applied physics letters, 1996-04, Vol.68 (16), p.2279-2281

1996

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Influence of SrTiO3 bicrystal microstructural defects on YBa2Cu3O7 grain-boundary Josephson junctions

Applied physics letters, 1997-04, Vol.70 (14), p.1882-1884

1997

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Performance and variability in multi-VT FinFETs using fin doping

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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IEEE_Xplore

Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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IEEE_Xplore

Impact of thermal budget on dopant-segregated (DS) metal S/D gate-all-around (GAA) PFETs

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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IEEE_Xplore

Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

2012 International Electron Devices Meeting, 2012, p.18.6.1-18.6.4

2012

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IEEE_Xplore

Effect of Lattice Strain on Growth Mechanisms and Electrical Transport Behavior of Epitaxial CaRuO3 Thin Films

MRS proceedings, 1997, Vol.474

1997

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Supercurrent distributions and flux penetration in YBa2Cu3O7–YBa2C o0.15Cu2.85O7–YBa2Cu3O7 edge junctions

Journal of applied physics, 1997-09, Vol.82 (5), p.2427-2434

1997

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In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

2015 IEEE International Memory Workshop (IMW), 2015, p.1-4

2015

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IEEE_Xplore

Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

2012 International Electron Devices Meeting, 2012, p.20.4.1-20.4.3

2012

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IEEE_Xplore

Magnetoresistance properties of thin films of the metallic oxide ferromagnet SrRuO3

Physical review. B, Condensed matter, 1995-08, Vol.52 (5), p.3459-3465

1995

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Absence of proximity coupling in ultra-thin c-axis oriented YBa2Cu3O7 - Au bilayers

Physica. C, Superconductivity, 1994-12, Vol.235-240, p.3301-3302

1994

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300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique

2011 International Electron Devices Meeting, 2011, p.35.5.1-35.5.4

2011

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IEEE_Xplore

Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node

2011 International Semiconductor Device Research Symposium (ISDRS), 2011, p.1-2

2011

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IEEE_Xplore

Effect of Lattice Strain on Growth Mechanisms and Electrical Transport Behavior of Epitaxial CaRuO 3 Thin Films

MRS proceedings, 1997, Vol.474, Article 199

1997

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Negative-bias temperature instability cure by process optimization

Statistical assessment of endurance degradation in high and low resistive states of the HfO2-based RRAM

Survival from cervical necrotizing fasciitis

FinFET parasitic resistance reduction by segregating shallow Sb, Ge and As implants at the silicide interface

Strain stabilized metal–insulator transition in epitaxial thin films of metallic oxide CaRuO3

Impact of Fin Doping and Gate Stack on FinFET (110) and (100) Electron and Hole Mobilities

Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics

Microstructural defects in bicrystal substrates and their influence on yttrium barium copper oxide grain boundary Josephson junctions

Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs

Magnetoresistance probe of spatial current variations in high- T c YBa2Cu3O7–SrRuO3–YBa2Cu3O7 Josephson junctions

Supercurrent distributions in YBa2Cu3O7–YBa2Co0.21Cu2.79O7–YBa2Cu3O7 edge Josephson junctions

Influence of SrTiO3 bicrystal microstructural defects on YBa2Cu3O7 grain-boundary Josephson junctions

Performance and variability in multi-VT FinFETs using fin doping

Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling

Impact of thermal budget on dopant-segregated (DS) metal S/D gate-all-around (GAA) PFETs

Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement

Effect of Lattice Strain on Growth Mechanisms and Electrical Transport Behavior of Epitaxial CaRuO3 Thin Films

Supercurrent distributions and flux penetration in YBa2Cu3O7–YBa2C o0.15Cu2.85O7–YBa2Cu3O7 edge junctions

In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Real-time study of switching kinetics in integrated 1T/ HfOx 1R RRAM: Intrinsic tunability of set/reset voltage and trade-off with switching time

Magnetoresistance properties of thin films of the metallic oxide ferromagnet SrRuO3

Absence of proximity coupling in ultra-thin c-axis oriented YBa2Cu3O7 - Au bilayers

300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique

Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node

Effect of Lattice Strain on Growth Mechanisms and Electrical Transport Behavior of Epitaxial CaRuO 3 Thin Films

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