UB Paderborn / Katalog / Suche / in CDI

Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions

Applied physics letters, 2005-05, Vol.86 (20), p.202101-202101-3

2005

Volltextzugriff (PDF)

Demonstration of a silicon-based quantum cellular automata cell

Applied physics letters, 2006-07, Vol.89 (1), p.013503-013503-3

2006

Volltextzugriff (PDF)

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

Microsystem technologies : sensors, actuators, systems integration, 2013, Vol.19 (1), p.131-136

2013

Volltextzugriff (PDF)

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Thin solid films, 2010-02, Vol.518 (9), p.2524-2527

2010

Volltextzugriff (PDF)

The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

Nanotechnology, 2005-10, Vol.16 (10), p.2446-2449

2005

Volltextzugriff (PDF)

Progress in silicon-based quantum computing

Philosophical transactions of the Royal Society of London. Series A: Mathematical, physical, and engineering sciences, 2003-07, Vol.361 (1808), p.1451-1471

2003

Volltextzugriff (PDF)

Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

Nanotechnology, 2008-07, Vol.19 (26), p.265201-265201 (5)

2008

Volltextzugriff (PDF)

Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon

IEEE transactions on nuclear science, 2008-04, Vol.55 (2), p.812-816

2008

Volltextzugriff (PDF)

Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.231 (1-4), p.463-466

2005

Volltextzugriff (PDF)

Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures

Nanotechnology, 2003-02, Vol.14 (2), p.157-160

2003

Volltextzugriff (PDF)

Single atom Si nanoelectronics using controlled single-ion implantation

Microelectronic engineering, 2005-03, Vol.78, p.279-286

2005

Volltextzugriff (PDF)

Fabrication of light-turning mirrors in buried-channel silica waveguides for monolithic and hybrid integration

Journal of lightwave technology, 1997-01, Vol.15 (1), p.148-153, Article 148

1997

Volltextzugriff (PDF)

Effects of controlled texturization of the crystalline Si surface on the SiO/sub 2//Si effective barrier height

IEEE electron device letters, 1994-12, Vol.15 (12), p.513-515

1994

Volltextzugriff (PDF)

Quantum effects in ion implanted devices

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.221-225

2006

Volltextzugriff (PDF)

Tunable couplers fabricated in K+/Na+ ion exchanged glass

Electronics letters, 1990, Vol.26 (12), p.786-788

1990

Volltextzugriff (PDF)

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-09, Vol.210 (Complete), p.186-190

2003

Volltextzugriff (PDF)

Nanofabrication processes for single-ion implantation of silicon quantum computer devices

Smart materials and structures, 2002-10, Vol.11 (5), p.735-740

2002

Volltextzugriff (PDF)

Constant Capacitance Deep-Level Transient Spectroscopy Study of Bulk Traps and Interface States in P Implanted Si MOS Capacitors

Conference on Optoelectronic and Microelectronic Materials and Devices, 2004, 2004, p.113-116

2004

Volltextzugriff (PDF)

Observation of Fano resonance in heavily doped p-type silicon at room temperature

Physical review. B, Condensed matter, 1995-08, Vol.52 (8), p.5672-5674

1995

Volltextzugriff (PDF)

Application of charged insulator defects for the realisation of low-dimensional structures in silicon

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 2000, p.213-216

2000

Volltextzugriff (PDF)

Characterisation of dielectric properties of PECVD Silicon Nitride for RF MEMS applications

2008 IEEE International Multitopic Conference, 2008, p.91-96

2008

Volltextzugriff (PDF)

Tunable couplers fabricated in K sup + /Na sup + ion-exchanged glass

Electronics letters, 1990-01, Vol.26 (12), p.786-787

1990

Volltextzugriff (PDF)

Effects of controlled texturization of the crystalline Si surface on the SiO2/Si effective barrier height

IEEE electron device letters, 1994-12, Vol.15 (12), p.513-515

1994

Volltextzugriff (PDF)

Effects of controlled texturization of the crystalline Si surfaceon the SiO(2)/Si effective barrier height

IEEE electron device letters, 1994-12, Vol.15 (12), p.513-515

1994

Volltextzugriff (PDF)

Characterization and optimisation of PECVD Silicon Nitride as dielectric layer for RF MEMS using reflectance measurements

2008 8th International Symposium on Antennas, Propagation and EM Theory, 2008, p.500-503

2008

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20 - keV ions

Demonstration of a silicon-based quantum cellular automata cell

Fabrication and characterization of PECVD silicon nitride for RF MEMS applications

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures

Progress in silicon-based quantum computing

Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots

Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon

Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

Technology computer-aided design modelling of single-atom doping for fabrication of buried nanostructures

Single atom Si nanoelectronics using controlled single-ion implantation

Fabrication of light-turning mirrors in buried-channel silica waveguides for monolithic and hybrid integration

Effects of controlled texturization of the crystalline Si surface on the SiO/sub 2//Si effective barrier height

Quantum effects in ion implanted devices

Tunable couplers fabricated in K+/Na+ ion exchanged glass

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

Nanofabrication processes for single-ion implantation of silicon quantum computer devices

Constant Capacitance Deep-Level Transient Spectroscopy Study of Bulk Traps and Interface States in P Implanted Si MOS Capacitors

Observation of Fano resonance in heavily doped p-type silicon at room temperature

Application of charged insulator defects for the realisation of low-dimensional structures in silicon

Characterisation of dielectric properties of PECVD Silicon Nitride for RF MEMS applications

Tunable couplers fabricated in K sup + /Na sup + ion-exchanged glass

Effects of controlled texturization of the crystalline Si surface on the SiO2/Si effective barrier height

Effects of controlled texturization of the crystalline Si surfaceon the SiO(2)/Si effective barrier height

Characterization and optimisation of PECVD Silicon Nitride as dielectric layer for RF MEMS using reflectance measurements

Suchergebnisse filtern