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Effects of nitrogen on oxygen precipitation in silicon

Journal of applied physics, 1992-04, Vol.71 (8), p.3760-3765

1992

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Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

Journal of applied physics, 1980-05, Vol.51 (5), p.2659-2668

1980

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Effect of carbon on oxygen precipitation in silicon

Journal of applied physics, 1990-05, Vol.67 (9), p.4313-4319

1990

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Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

Applied physics letters, 1986-10, Vol.49 (14), p.892-894

1986

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Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

Applied physics letters, 1982-02, Vol.40 (4), p.342-344

1982

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Intracenter transitions in the dominant deep level (EL2) in GaAs

Applied physics letters, 1983-08, Vol.43 (3), p.302-304

1983

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Identification of oxygen-related midgap level in GaAs

Applied physics letters, 1984-02, Vol.44 (3), p.336-338

1984

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Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

Applied physics letters, 1985-11, Vol.47 (9), p.929-931

1985

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Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio

Journal of applied physics, 1979-02, Vol.50 (2), p.899-908

1979

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Growth and electronic properties of thin Si3N4 films grown on Si in a nitrogen glow discharge

Journal of applied physics, 1991-04, Vol.69 (7), p.3995-4002

1991

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Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels

Journal of applied physics, 1986-04, Vol.59 (7), p.2451-2456

1986

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Electron mobility in n -type GaAs at 77 K: Determination of the compensation ratio

Journal of applied physics, 1982-01, Vol.53 (1), p.769-770

1982

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Bulk GaAs crystal growth by liquid phase electroepitaxy

Journal of crystal growth, 1987-03, Vol.82 (3), p.279-288

1987

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Native acceptor levels in Ga-rich GaAs

Journal of applied physics, 1989-01, Vol.65 (2), p.596-599

1989

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Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy

Journal of applied physics, 1987, Vol.61 (1), p.359-364

1987

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Application of scanning electron microscopy to determination of surface recombination velocity: GaAs

Applied physics letters, 1975-11, Vol.27 (10), p.537-539

1975

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New application for isothermal capacitance transient spectroscopy : identification of tunneling in semiconductor-insulator interfaces

Applied physics letters, 1991-01, Vol.58 (2), p.137-139

1991

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Characteristics of GaAs with inverted thermal conversion

Journal of applied physics, 1987-10, Vol.62 (8), p.3482-3485

1987

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Electron mobility in modulation-doped heterostructures

Physical review. B, Condensed matter, 1984-01, Vol.30 (8), p.4571-4582

1984

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Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Journal of applied physics, 1989-10, Vol.66 (7), p.3309-3316

1989

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Silicon nitride films grown on silicon below 300 °C in low power nitrogen plasma

Applied physics letters, 1986-07, Vol.49 (2), p.97-99

1986

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Effect of plastic deformation on electronic properties of GaAs

Journal of applied physics, 1987-11, Vol.62 (9), p.3791-3798

1987

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Minority-carrier mobility in p -type GaAs

Journal of applied physics, 1979-07, Vol.50 (7), p.5040-5042

1979

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The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

Journal of applied physics, 1983-05, Vol.54 (5), p.2533-2539

1983

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Quantitative study of the charge transfer in chemisorption; oxygen chemisorption on ZnO

Journal of applied physics, 1977-01, Vol.48 (8), p.3566-3575

1977

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Effects of nitrogen on oxygen precipitation in silicon

Electron mobility and free-carrier absorption in InP; determination of the compensation ratio

Effect of carbon on oxygen precipitation in silicon

Inverted thermal conversion - GaAs, a new alternative material for integrated circuits

Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors

Intracenter transitions in the dominant deep level (EL2) in GaAs

Identification of oxygen-related midgap level in GaAs

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio

Growth and electronic properties of thin Si3N4 films grown on Si in a nitrogen glow discharge

Optical and transient capacitance study of EL2 in the absence and presence of other midgap levels

Electron mobility in n -type GaAs at 77 K: Determination of the compensation ratio

Bulk GaAs crystal growth by liquid phase electroepitaxy

Native acceptor levels in Ga-rich GaAs

Elimination of dislocations in bulk GaAs crystals grown by liquid-phase electroepitaxy

Application of scanning electron microscopy to determination of surface recombination velocity: GaAs

New application for isothermal capacitance transient spectroscopy : identification of tunneling in semiconductor-insulator interfaces

Characteristics of GaAs with inverted thermal conversion

Electron mobility in modulation-doped heterostructures

Gettering of donor impurities by V in GaAs and the growth of semi-insulating crystals

Silicon nitride films grown on silicon below 300 °C in low power nitrogen plasma

Effect of plastic deformation on electronic properties of GaAs

Minority-carrier mobility in p -type GaAs

The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model

Quantitative study of the charge transfer in chemisorption; oxygen chemisorption on ZnO

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