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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

Applied physics letters, 2011-07, Vol.99 (2)

2011

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Electronic Structure of Cerium Oxide Gate Dielectric Grown by Plasma-Enhanced Atomic Layer Deposition

Journal of the Electrochemical Society, 2011, Vol.158 (10), p.G217

2011

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Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Chemistry of materials, 2012-04, Vol.24 (8), p.1407-1414

2012

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Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

Chemistry of materials, 2010-10, Vol.22 (20), p.5700-5706

2010

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Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Journal of the Electrochemical Society, 2011-01, Vol.158 (8), p.G169

2011

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Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

Japanese Journal of Applied Physics, 2010-05, Vol.49 (5), p.05FA10-05FA10-5

2010

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Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Thin solid films, 2015-07, Vol.587, p.83-87

2015

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Chemistry of materials, 2011-05, Vol.23 (10), p.2650-2656

2011

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Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application

Chemistry of materials, 2012-12, Vol.24 (24), p.4675-4685

2012

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Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

Chemistry of materials, 2012-12, Vol.24 (24), p.4686-4692

2012

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Deposition of highly pure ruthenium thin films with a new metal-organic precursor

Surface & coatings technology, 2007-09, Vol.201 (22), p.9146-9148

2007

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Study on Initial Growth Behavior of RuO 2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Chemistry of materials, 2012-04, Vol.24 (8), p.1407-1414

2012

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Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor

Chemistry of materials, 2009-01, Vol.21 (2), p.207-209

2009

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A new RuO4 solvent solution for pure ruthenium film depositions

Microelectronic engineering, 2006-11, Vol.83 (11-12), p.2248-2252

2006

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Growth of Conductive SrRuO 3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO 2 Layers

Chemistry of materials, 2012-12, Vol.24 (24), p.4686-4692

2012

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Chemistry of materials, 2011-05, Vol.23 (10)

2011

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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO 2 film as bottom electrode

Applied physics letters, 2011-07, Vol.99 (2), p.022901-022901-3

2011

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Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Journal of energy chemistry, 2013-05, Vol.22 (3), p.403-407

2013

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Growth of RuO 2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO 4 Precursor and 5% H 2 Reduction Gas

Chemistry of materials, 2010-10, Vol.22 (20), p.5700-5706

2010

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Plasma-enhanced atomic layer deposition of Co using Co（MeCp）2 precursor

能源化学：英文版, 2013, Vol.22 (3), p.403-407

Jusang Park Han-Bo-Ram Lee Doyoung Kim Jaehong Yoon Clement Lansalot Julien Gatineau Henri Chevrel Hyungjun Kim

2013

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Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO 4 Precursor

Chemistry of materials, 2009-01, Vol.21 (2), p.207-209

2009

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A new RuO 4 solvent solution for pure ruthenium film depositions

Microelectronic engineering, 2006, Vol.83 (11), p.2248-2252

2006

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A New Liquid Precursor for Pure Ruthenium Depositions

ECS transactions, 2007, Vol.6 (1), p.303-307

2007

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Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

ECS transactions, 2009, Vol.19 (2), p.717-728

2009

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Ruthenium Precursor with Increased Reactivity

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (23), p.1872-1872

2008

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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

Electronic Structure of Cerium Oxide Gate Dielectric Grown by Plasma-Enhanced Atomic Layer Deposition

Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

Deposition of highly pure ruthenium thin films with a new metal-organic precursor

Study on Initial Growth Behavior of RuO 2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor

A new RuO4 solvent solution for pure ruthenium film depositions

Growth of Conductive SrRuO 3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO 2 Layers

Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO 2 film as bottom electrode

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Growth of RuO 2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO 4 Precursor and 5% H 2 Reduction Gas

Plasma-enhanced atomic layer deposition of Co using Co（MeCp）2 precursor

Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO 4 Precursor

A new RuO 4 solvent solution for pure ruthenium film depositions

A New Liquid Precursor for Pure Ruthenium Depositions

Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

Ruthenium Precursor with Increased Reactivity

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