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Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1296-1303

Gassoumi, M.

2020

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Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes

Physics of the solid state, 2020-04, Vol.62 (4), p.636-641

Gassoumi, M.

2020

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Possibility of controlling the conduction mechanism by choosing a specific doping element in a praseodymium manganite system

RSC advances, 2020-09, Vol.1 (56), p.33868-33878

2020

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Chromium concentration effects on transport and dielectric behavior of lanthanum-gallium ferrite

Physica. B, Condensed matter, 2020-08, Vol.591, p.412244, Article 412244

2020

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Transport properties of La0.9Sr0.1MnO3 manganite

European physical journal plus, 2020-06, Vol.135 (6), p.456, Article 456

2020

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Structural, optical and electrical studies on Mn substituted La0.6Ga0.4FeO3

Journal of alloys and compounds, 2019-06, Vol.791, p.822-832

2019

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Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors

SILICON, 2022-06, Vol.14 (8), p.3899-3903

2022

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Magnetic properties and impedance spectroscopic analysis in Pr0.7Ca0.3Mn0.95Fe0.05O3 perovskite ceramic

Journal of materials science. Materials in electronics, 2020-12, Vol.31 (23), p.21046-21058

2020

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Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.379-383

2021

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Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors

SILICON, 2022-08, Vol.14 (13), p.7417-7422

2022

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Morphological, electrical and dielectric properties of La0.6Ga0.4Fe1-xMnxO3 ceramics

Phase transitions, 2020-11, Vol.93 (10-11), p.992-1005

2020

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Influence of Fe doping on physical properties of charge ordered praseodymium–calcium–manganite material

European physical journal plus, 2020-10, Vol.135 (10), p.809, Article 809

2020

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Effect of replacing Fe with Ti on the electrical and dielectric properties of orthoferrite La0.7Ga0.3Fe1-xTixO3 (x = 0, 0.1, 0.2, and 0.3)

Phase transitions, 2020-08, Vol.93 (8), p.741-758

2020

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Effect of Ti doping on the structural, morphological and magnetic properties of La0.7Ga0.3Fe1-xTixO3

Results in physics, 2021-07, Vol.26, p.104342, Article 104342

2021

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Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Current Applied Physics, 2013, 13(7), , pp.1359-1364

2013

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Summerfield scaling model and conduction processes defining the transport properties of silver substituted half doped (La–Ca) MnO3 ceramic

Ceramics international, 2020-10, Vol.46 (15), p.24710-24717

2020

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Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

Physica. B, Condensed matter, 2010-05, Vol.405 (9), p.2337-2339

2010

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The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Microelectronic engineering, 2011-04, Vol.88 (4), p.370-372

2011

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Double Jonscher response and contribution of multiple mechanisms in electrical conductivity processes of Fe-PrCaMnO ceramic

Ceramics international, 2020-02, Vol.46 (2), p.1601-1608

2020

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Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

European physical journal. Applied physics, 2010-07, Vol.51 (1), p.10304

2010

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Improvement in Electrical and 2DEG Properties of Al.sub.0.26Ga.sub.0.74N|GaN|Si HEMTs

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.379

2021

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SPECTROSCOPIC ELLIPSOMETRY ANALYSIS OF A ANTIMONY TRISULFIDE (Sb2S3) THIN FILM

Chalcogenide letters, 2020-09, Vol.17 (9), p.461-468

2020

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Optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy

Physica. E, Low-dimensional systems & nanostructures, 2021-07, Vol.131, p.114733, Article 114733

2021

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Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

Journal of Ovonic Research, 2023-12, Vol.19 (6), p.763-773

2023

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Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

Journal of applied physics, 2011-07, Vol.110 (1), p.013701-1-6

2011

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Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS

Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes

Possibility of controlling the conduction mechanism by choosing a specific doping element in a praseodymium manganite system

Chromium concentration effects on transport and dielectric behavior of lanthanum-gallium ferrite

Transport properties of La0.9Sr0.1MnO3 manganite

Structural, optical and electrical studies on Mn substituted La0.6Ga0.4FeO3

Impedance Characterization of AlGaN/GaN/Si High Electron Mobility Transistors

Magnetic properties and impedance spectroscopic analysis in Pr0.7Ca0.3Mn0.95Fe0.05O3 perovskite ceramic

Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs

Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors

Morphological, electrical and dielectric properties of La0.6Ga0.4Fe1-xMnxO3 ceramics

Influence of Fe doping on physical properties of charge ordered praseodymium–calcium–manganite material

Effect of replacing Fe with Ti on the electrical and dielectric properties of orthoferrite La0.7Ga0.3Fe1-xTixO3 (x = 0, 0.1, 0.2, and 0.3)

Effect of Ti doping on the structural, morphological and magnetic properties of La0.7Ga0.3Fe1-xTixO3

Direct-current and radio-frequency characteristics of passivated AlGaN/GaN/Si high electron mobility transistors

Summerfield scaling model and conduction processes defining the transport properties of silver substituted half doped (La–Ca) MnO3 ceramic

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

Double Jonscher response and contribution of multiple mechanisms in electrical conductivity processes of Fe-PrCaMnO ceramic

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

Improvement in Electrical and 2DEG Properties of Al.sub.0.26Ga.sub.0.74N|GaN|Si HEMTs

SPECTROSCOPIC ELLIPSOMETRY ANALYSIS OF A ANTIMONY TRISULFIDE (Sb2S3) THIN FILM

Optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy

Colossal permittivity, impedance analysis and electric properties in AlGaN/GaN HEMTs

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

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