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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2017-01, Vol.35 (1)

2017

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Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CB02

2017

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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-05, Vol.38 (3)

2020

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Area selective deposition using alternate deposition and etch super-cycle strategies

Dalton transactions : an international journal of inorganic chemistry, 2022-01, Vol.51 (2), p.442-45

2022

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Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)

2019

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Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-05, Vol.39 (3)

2021

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Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

Journal of materials research, 2012-01, Vol.27 (1), p.320-329

2012

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Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

Advanced electronic materials, 2019-02, Vol.5 (2), p.n/a

2019

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Atomic and Molecular Layer Deposition Area Selective Deposition using alternate deposition and etch super-cycle strategies

Dalton transactions : an international journal of inorganic chemistry, 2021-11

2021

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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters

ACS applied nano materials, 2024-06, Vol.7 (11), p.13727-13735

2024

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Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Applied surface science, 2014-06, Vol.303, p.388-392

2014

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Development and optimization of large-scale integration of 2D material in memristors

2d materials, 2024-10, Vol.11 (4), p.45002

2024

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Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-09, Vol.34 (5)

2016

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Cleavage fracture of brittle semiconductors from the nanometer to the centimeter scale

Advanced engineering materials, 2005-05, Vol.7 (5), p.309-317

2005

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Area selective deposition of TiO 2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2019-03, Vol.37 (2)

2019

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Topographically selective deposition

Applied physics letters, 2019-01, Vol.114 (4)

2019

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Evaluation of plasma parameters on PEALD deposited TaCN

Microelectronic engineering, 2013-07, Vol.107, p.156-160

2013

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Forming mechanism of Te-based conductive-bridge memories

Applied surface science, 2018-02, Vol.432 (Part A), p.34-40

2018

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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS 2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters

ACS applied nano materials, 2024-06, Vol.7 (11), p.13727-13735

2024

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PECVD, RF vs Dual Frequency: investigation of plasma influence on metalorganic precursors decomposition and material characteristics

Journal of physics. D, Applied physics, 2014, Vol.47 (18)

2014

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Hybrid-RRAM towards next generation of non-volatile memory: Coupling of oxygen vacancies and metal ions

Advanced electronic materials, 2018-11, Vol.5 (2)

2018

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Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices

2017 47th European Solid-State Device Research Conference (ESSDERC), 2017, p.144-147

2017

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IEEE_Xplore

Mechanical Surface Nano-Patterning of Indium Phosphide and Silicon for Subsequent Electrochemical Processing

Gassilloud, Rémy

2006

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ProQuest

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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition

Area selective deposition using alternate deposition and etch super-cycle strategies

Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance

Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches

Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP

Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions

Atomic and Molecular Layer Deposition Area Selective Deposition using alternate deposition and etch super-cycle strategies

Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters

Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V

Development and optimization of large-scale integration of 2D material in memristors

Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break

Cleavage fracture of brittle semiconductors from the nanometer to the centimeter scale

Area selective deposition of TiO 2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

Topographically selective deposition

Evaluation of plasma parameters on PEALD deposited TaCN

Forming mechanism of Te-based conductive-bridge memories

Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS 2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters

PECVD, RF vs Dual Frequency: investigation of plasma influence on metalorganic precursors decomposition and material characteristics

Hybrid-RRAM towards next generation of non-volatile memory: Coupling of oxygen vacancies and metal ions

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices

Mechanical Surface Nano-Patterning of Indium Phosphide and Silicon for Subsequent Electrochemical Processing

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