UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Deep-Ultraviolet Light-Emitting Diodes

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.12-25

2010

Volltextzugriff (PDF)

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

Journal of applied physics, 2011-06, Vol.109 (11), p.113516-113516-7

2011

Volltextzugriff (PDF)

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Journal of physics. D, Applied physics, 2016-04, Vol.49 (14), p.145110-145115

2016

Volltextzugriff (PDF)

Internal quantum efficiency in AlGaN with strong carrier localization

Applied physics letters, 2012-11, Vol.101 (21)

2012

Volltextzugriff (PDF)

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

Applied physics letters, 2010-01, Vol.96 (4), p.042105-042105-3

2010

Volltextzugriff (PDF)

Correlation between carrier localization and efficiency droop in AlGaN epilayers

Applied physics letters, 2013-07, Vol.103 (1)

2013

Volltextzugriff (PDF)

High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

Applied physics letters, 2014-12, Vol.105 (24), p.241108

2014

Volltextzugriff (PDF)

Nonresonant detection of terahertz radiation in field effect transistors

Journal of applied physics, 2002-06, Vol.91 (11), p.9346-9353

2002

Volltextzugriff (PDF)

Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

Journal of physics. D, Applied physics, 2015-06, Vol.48 (27), p.275105-5

2015

Volltextzugriff (PDF)

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Applied physics letters, 2000-08, Vol.77 (9), p.1339-1341

2000

Volltextzugriff (PDF)

Optimization of white polychromatic semiconductor lamps

Applied physics letters, 2002-01, Vol.80 (2), p.234-236

2002

Volltextzugriff (PDF)

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

Applied physics letters, 2008-08, Vol.93 (5), p.051113-051113-3

2008

Volltextzugriff (PDF)

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

Applied physics letters, 2004-06, Vol.84 (23), p.4762-4764

2004

Volltextzugriff (PDF)

Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers

Journal of applied physics, 2015-08, Vol.118 (8)

2015

Volltextzugriff (PDF)

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Applied physics letters, 2002-02, Vol.80 (6), p.977-979

2002

Volltextzugriff (PDF)

Terahertz detection by GaN/AlGaN transistors

Electronics letters, 2006, Vol.42 (23), p.1342-1344

2006

Volltextzugriff (PDF)

Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

AIP advances, 2016-04, Vol.6 (4), p.045212-045212-5

2016

Volltextzugriff (PDF)

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Journal of applied physics, 2010-11, Vol.108 (9), p.093113-093113-6

2010

Volltextzugriff (PDF)

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

Applied physics letters, 2003-11, Vol.83 (18), p.3722-3724

2003

Volltextzugriff (PDF)

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Applied physics letters, 2009-11, Vol.95 (18), p.181914-181914-3

2009

Volltextzugriff (PDF)

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

Journal of applied physics, 2004-06, Vol.95 (11), p.6409-6413

2004

Volltextzugriff (PDF)

Concept design of a UV light-emitting diode based fluorescence sensor for real-time bioparticle detection

Sensors and actuators. B, Chemical, 2010-07, Vol.148 (2), p.371-378

2010

Volltextzugriff (PDF)

Photoluminescence efficiency in AlGaN quantum wells

Physica. B, Condensed matter, 2014-11, Vol.453, p.40-42

2014

Volltextzugriff (PDF)

RF power limiter using capacitively-coupled contacts III-nitride varactor

Electronics letters, 2012-11, Vol.48 (23), p.1480-1481

2012

Volltextzugriff (PDF)

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied physics letters, 2001-10, Vol.79 (16), p.2651-2653

2001

Volltextzugriff (PDF)

1 – 25 von 448

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(344)
Mit Volltextzugriff
(350)

Publikationsform

Sprache

Englisch
(438)
Japanisch
(112)
Russisch
(4)
Litauisch
(1)
Polnisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(287)
Physics
(204)
Physical Sciences
(196)
Physics, Applied
(159)
Technology
(145)
Engineering
(95)
Engineering, Electrical & Electronic
(91)
Gallium Nitride
(54)
Materials Science
(53)
Physics, Condensed Matter
(52)
Exact Sciences And Technology
(48)
Aluminum Gallium Nitride
(43)
Hemts
(43)
Materials Science, Multidisciplinary
(41)
Electronics
(37)
Modfets
(36)
Physics And Astronomy
(36)
Applied Sciences
(34)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(31)
Gallium Nitrides
(30)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Deep-Ultraviolet Light-Emitting Diodes

Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy

Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Internal quantum efficiency in AlGaN with strong carrier localization

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

Correlation between carrier localization and efficiency droop in AlGaN epilayers

High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy

Nonresonant detection of terahertz radiation in field effect transistors

Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Optimization of white polychromatic semiconductor lamps

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

High-efficiency 269 nm emission deep ultraviolet light-emitting diodes

Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers

Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells

Terahertz detection by GaN/AlGaN transistors

Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes

Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy

Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors

Concept design of a UV light-emitting diode based fluorescence sensor for real-time bioparticle detection

Photoluminescence efficiency in AlGaN quantum wells

RF power limiter using capacitively-coupled contacts III-nitride varactor

Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Suchergebnisse filtern