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Hafnium and Uranium Contributions to Soft Error Rate at Ground Level

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3141-3145

2008

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Radioactive Nuclei Induced Soft Errors at Ground Level

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3437-3441

2009

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Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories

Applied physics letters, 2008-08, Vol.93 (6), p.064105-064105-3

2008

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Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1354-1362

1999

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Extrapolation of radiation-induced EDFA gain degradation at space dose rate

Electronics letters, 2005-02, Vol.41 (4), p.168-170

2005

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Effect of switching from high to low dose rate on linear bipolar technology radiation response

IEEE transactions on nuclear science, 2004-10, Vol.51 (5), p.2896-2902

2004

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Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

Journal of non-crystalline solids, 2005-12, Vol.351 (52-54), p.3834-3838

2005

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Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2830-2835

2002

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SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2534-2543

1998

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An integrated sensor using optically stimulated luminescence for in-flight dosimetry

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2412-2416

2000

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Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method

Applied surface science, 2003-05, Vol.212-213 (13), p.607-613

2003

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Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetry

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1322-1326

2002

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SEU critical charge and sensitive area in a submicron CMOS technology

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.2266-2273

1997

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Study of basic mechanisms induced by an ionizing particle on simple structures

IEEE transactions on nuclear science, 2000-06, Vol.47 (3), p.519-526

2000

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A new approach for the prediction of the neutron-induced SEU rate

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2915-2920

1998

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Analysis of the proton-induced permanent degradation in an optocoupler

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1421-1425

2002

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Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

IEEE transactions on nuclear science, 2005-08, Vol.52 (4), p.1148-1155

2005

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High-energy particle irradiation of optically stimulated luminescent films at CERN

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.2056-2060

2001

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La luminescence stimulée optiquement :Applications à la cartographie de dose et à la mesure de dose en environnement spatial

Radioprotection, 2006, Vol.41 (Suppl. 5), p.S87-S101

2006

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Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature

IEEE transactions on nuclear science, 2002-06, Vol.49 (3), p.1474-1479

2002

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Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2990-2997

2002

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Threshold LET for SEU induced by low energy ions [in CMOS memories]

IEEE transactions on nuclear science, 1999-12, Vol.46 (6), p.1370-1377

1999

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Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1993-12, Vol.40 (6), p.1952-1958

1993

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Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation

IEEE transactions on nuclear science, 1995-12, Vol.42 (6), p.1789-1796

1995

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Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2695-2699

1998

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Hafnium and Uranium Contributions to Soft Error Rate at Ground Level

Radioactive Nuclei Induced Soft Errors at Ground Level

Effects of atmospheric neutrons and natural contamination on advanced microelectronic memories

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Extrapolation of radiation-induced EDFA gain degradation at space dose rate

Effect of switching from high to low dose rate on linear bipolar technology radiation response

Growth of heavy ion-induced nanodots at the SiO2–Si interface: Correlation with ultrathin gate oxide reliability

Evaluation and prediction of the degradation of a COTS CCD induced by displacement damage

SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain

An integrated sensor using optically stimulated luminescence for in-flight dosimetry

Electrical characterization of charges in irradiated oxides by electrostatic force microscopy and Kelvin method

Characterization of an integrated sensor using optically stimulated luminescence for in-flight dosimetry

SEU critical charge and sensitive area in a submicron CMOS technology

Study of basic mechanisms induced by an ionizing particle on simple structures

A new approach for the prediction of the neutron-induced SEU rate

Analysis of the proton-induced permanent degradation in an optocoupler

Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER

High-energy particle irradiation of optically stimulated luminescent films at CERN

La luminescence stimulée optiquement :Applications à la cartographie de dose et à la mesure de dose en environnement spatial

Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature

Model for high-temperature radiation effects in n-p-n bipolar-junction transistors

Threshold LET for SEU induced by low energy ions [in CMOS memories]

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

Evaluation of the upset risk in CMOS SRAM through full three dimensional simulation

Irradiated integrated circuits dose-attenuation mapping using optically stimulated phosphors for packaging dosimetry

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