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Time localized tilted beams in nearly-degenerate laser cavities

Scientific reports, 2024-04, Vol.14 (1), p.9852-9852, Article 9852

2024

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Third Order Dispersion in Time-Delayed Systems

Physical review letters, 2019-07, Vol.123 (4), p.043902-043902, Article 043902

2019

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Multiwatt-power highly-coherent compact single-frequency tunable vertical-external-cavity-surface-emitting-semiconductor-laser

Optics express, 2010-07, Vol.18 (14), p.14627-14636

2010

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Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantum limit

Optics express, 2007-07, Vol.15 (15), p.9403-9417

2007

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Temporal localized structures in mode-locked vertical external-cavity surface-emitting lasers

Optics letters, 2018-11, Vol.43 (21), p.5367-5370

2018

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Highly coherent modeless broadband semiconductor laser

Optics letters, 2015-09, Vol.40 (18), p.4301-4304

2015

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Manipulation of temporal localized structures in a vertical external-cavity surface-emitting laser with optical feedback

Optics letters, 2021-03, Vol.46 (5), p.1109-1112

2021

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10-GHz train of sub-500-fs optical soliton-like pulses from a surface-emitting semiconductor laser

IEEE photonics technology letters, 2005-02, Vol.17 (2), p.267-269

2005

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High power single-frequency continuously-tunable compact extended-cavity semiconductor laser

Optics express, 2009-06, Vol.17 (12), p.9503-9508

2009

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Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

Applied physics letters, 2002-05, Vol.80 (21), p.3892-3894

2002

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Vertical-external-cavity semiconductor lasers

Journal of physics. D, Applied physics, 2004-05, Vol.37 (9), p.R75-R85

2004

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CRDS with a VECSEL for broad-band high sensitivity spectroscopy in the 2.3 μ m window

Review of scientific instruments, 2016-08, Vol.87 (8)

2016

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Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm

IEEE photonics technology letters, 2005, Vol.17 (10), p.2020-2022

2005

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Photonic crystal-based flat lens integrated on a Bragg mirror for high-Q external cavity low noise laser

Optics express, 2014-03, Vol.22 (5), p.5962-5976

2014

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Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

Optics express, 2010-09, Vol.18 (20), p.21330-21341

2010

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High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm

Journal of crystal growth, 2004-07, Vol.268 (1), p.128-134

2004

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Technologies for thermal management of mid-IR Sb-based surface emitting lasers

Semiconductor science and technology, 2010-04, Vol.25 (4), p.045021-045021

2010

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Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 μm: Application to water and carbon dioxide

Chemical physics letters, 2005-11, Vol.416 (1), p.22-27

2005

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GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1912-1916

2009

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Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

Applied physics. B, Lasers and optics, 2007-02, Vol.86 (3), p.503-510

2007

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Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers

Applied physics. B, Lasers and optics, 2002-10, Vol.75 (4-5), p.445-451

2002

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Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D2 line

Applied physics. B, Lasers and optics, 2009-05, Vol.95 (2), p.315-321

2009

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Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy

Journal of the Optical Society of America. B, Optical physics, 2000-09, Vol.17 (9), p.1589

2000

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AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm

Semiconductor science and technology, 2007-10, Vol.22 (10), p.1140-1144

2007

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Time localized tilted beams in nearly-degenerate laser cavities

Third Order Dispersion in Time-Delayed Systems

Multiwatt-power highly-coherent compact single-frequency tunable vertical-external-cavity-surface-emitting-semiconductor-laser

Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers

Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantum limit

Temporal localized structures in mode-locked vertical external-cavity surface-emitting lasers

Highly coherent modeless broadband semiconductor laser

Manipulation of temporal localized structures in a vertical external-cavity surface-emitting laser with optical feedback

10-GHz train of sub-500-fs optical soliton-like pulses from a surface-emitting semiconductor laser

High power single-frequency continuously-tunable compact extended-cavity semiconductor laser

Sub-500-fs soliton-like pulse in a passively mode-locked broadband surface-emitting laser with 100 mW average power

Vertical-external-cavity semiconductor lasers

CRDS with a VECSEL for broad-band high sensitivity spectroscopy in the 2.3 μ m window

Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm

Photonic crystal-based flat lens integrated on a Bragg mirror for high-Q external cavity low noise laser

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

Intracavity laser absorption spectroscopy with a vertical external cavity surface emitting laser at 2.3 μm: Application to water and carbon dioxide

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE

Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

Soliton-like pulse-shaping mechanism in passively mode-locked surface-emitting semiconductor lasers

Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D2 line

Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm

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