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The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

Journal of physics. D, Applied physics, 2013-07, Vol.46 (26), p.264001-1-10

2013

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Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Physical review. B, Condensed matter and materials physics, 2012-07, Vol.86 (3), Article 035305

2012

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Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Nano letters, 2011-09, Vol.11 (9), p.3538-3542

2011

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Electronic disorder of P- and B-doped Si at the metal-insulator transition investigated by scanning tunnelling microscopy and electronic transport

New journal of physics, 2013-05, Vol.15 (5), p.55009-22

2013

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Controlled charge switching on a single donor with a scanning tunneling microscope

Physical review letters, 2008-08, Vol.101 (7), p.076103-076103, Article 076103

2008

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Nanoscale Potential Fluctuations in (GaMn)As/GaAs Heterostructures: From Individual Ions to Charge Clusters and Electrostatic Quantum Dots

Nano letters, 2010-12, Vol.10 (12), p.4874-4879

2010

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Enhanced donor binding energy close to a semiconductor surface

Physical review letters, 2009-04, Vol.102 (16), p.166101-166101, Article 166101

2009

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Simple and efficient scanning tunneling luminescence detection at low-temperature

Review of scientific instruments, 2009-12, Vol.80 (12), p.123704-123704

2009

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Evidence for one-dimensional electron propagation on Si(111)-(2×1) from Coulomb blockade

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (7), p.073406.1-073406.4, Article 073406

2005

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Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Physical review. B, Condensed matter and materials physics, 2010-07, Vol.82 (3), Article 035303

2010

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Surface induced asymmetry of acceptor wave functions

Physical review letters, 2010-02, Vol.104 (8), p.086404-086404, Article 086404

2010

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Challenges in cross-sectional scanning tunneling microscopy on semiconductors

Semiconductor science and technology, 2011-06, Vol.26 (6), p.064001

2011

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Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-11, Vol.28 (6), p.1086-1092

2010

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Bistable behavior of silicon atoms in the (110) surface of gallium arsenide

Physical review. B, Condensed matter and materials physics, 2011-08, Vol.84 (7), Article 075459

2011

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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

Applied physics letters, 2012-04, Vol.100 (14), p.142116-142116-3

2012

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Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

Physical review. B, Condensed matter and materials physics, 2011-09, Vol.84 (12), Article 125310

2011

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Challenges in cross-sectional scanning tunneling microscopy on semiconductors: (Nano)characterization of semiconductor materials and structures

Semiconductor science and technology, 2011, Vol.26 (6)

2011

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Simple and efficient scanning tunneling luminescence detectionat low-temperature

Review of scientific instruments, 2009-12, Vol.80 (12), p.123704-123704-5

2009

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2×1 reconstructed Si(111) surface: STM experiments versus ab initio calculations

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (24), p.245424.1-245424.7, Article 245424

2004

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Spectroscopy of positively and negatively buckled domains on Si(111)- 2 × 1

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (8), Article 085303

2012

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Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

Physical review. B, Condensed matter and materials physics, 2008-08, Vol.78 (7), Article 075313

2008

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Real Space Observation of Anisotropic Scattering in the -Chains on Si(111)-2X1 as a Quasi 1D System

Physics of Semiconductors; Part B, 2005-01, Vol.772, p.909-910

2005

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Spectroscopy of positively and negatively buckled domains on Si(111)-2 x 1

Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (8)

2012

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Identification of P dopants at nonequivalent lattice sites of the Si ( 111 ) − ( 2 × 1 ) surface

Physical review. B, Condensed matter and materials physics, 2007-09, Vol.76 (12), Article 125322

2007

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Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy

Scanning Probe Microscopy in Nanoscience and Nanotechnology 2, p.321-353

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The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Electronic disorder of P- and B-doped Si at the metal-insulator transition investigated by scanning tunnelling microscopy and electronic transport

Controlled charge switching on a single donor with a scanning tunneling microscope

Nanoscale Potential Fluctuations in (GaMn)As/GaAs Heterostructures: From Individual Ions to Charge Clusters and Electrostatic Quantum Dots

Enhanced donor binding energy close to a semiconductor surface

Simple and efficient scanning tunneling luminescence detection at low-temperature

Evidence for one-dimensional electron propagation on Si(111)-(2×1) from Coulomb blockade

Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Surface induced asymmetry of acceptor wave functions

Challenges in cross-sectional scanning tunneling microscopy on semiconductors

Influence of the tip work function on scanning tunneling microscopy and spectroscopy on zinc doped GaAs

Bistable behavior of silicon atoms in the (110) surface of gallium arsenide

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy

Challenges in cross-sectional scanning tunneling microscopy on semiconductors: (Nano)characterization of semiconductor materials and structures

Simple and efficient scanning tunneling luminescence detectionat low-temperature

2×1 reconstructed Si(111) surface: STM experiments versus ab initio calculations

Spectroscopy of positively and negatively buckled domains on Si(111)- 2 × 1

Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

Real Space Observation of Anisotropic Scattering in the -Chains on Si(111)-2X1 as a Quasi 1D System

Spectroscopy of positively and negatively buckled domains on Si(111)-2 x 1

Identification of P dopants at nonequivalent lattice sites of the Si ( 111 ) − ( 2 × 1 ) surface

Semiconductors Studied by Cross-sectional Scanning Tunneling Microscopy

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