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Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Surface science reports, 2010-10, Vol.65 (10-12), p.317-352

2010

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Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Journal of applied physics, 2001-09, Vol.90 (5), p.2057-2121

2001

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Soft x-ray photoemission studies of the HfO2/SiO2/Si system

Applied physics letters, 2002-03, Vol.80 (12), p.2135-2137

2002

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Modification of Electronic Properties of Graphene with Self-Assembled Monolayers

Nano letters, 2010-07, Vol.10 (7), p.2427-2432

2010

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High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

IEEE electron device letters, 2013-02, Vol.34 (2), p.175-177

2013

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Using practice facilitation to improve alcohol-related care in primary care: a mixed-methods pilot study protocol

Addiction science & clinical practice, 2022-03, Vol.17 (1), p.19-19, Article 19

2022

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Origin of the bias stress instability in single-crystal organic field-effect transistors

Physical review. B, Condensed matter and materials physics, 2010-08, Vol.82 (8), Article 085302

2010

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Energy level alignment of polythiophene/ZnO hybrid solar cells

Journal of materials chemistry. A, Materials for energy and sustainability, 2014-01, Vol.2 (19), p.7034-7044

2014

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Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

Applied physics letters, 2003-10, Vol.83 (16), p.3401-3403

2003

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High temperature stability in lanthanum and zirconia-based gate dielectrics

Journal of applied physics, 2001-10, Vol.90 (7), p.3476-3482

2001

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Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Journal of applied physics, 2004-12, Vol.96 (12), p.7485-7491

2004

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Soft x-ray photoemission studies of Hf oxidation

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2003-01, Vol.21 (1), p.106-109

2003

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Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

Applied physics letters, 1998-09, Vol.73 (11), p.1517-1519

1998

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Atomic state and characterization of nitrogen at the SiC/SiO2 interface

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001)

Journal of applied physics, 2006-07, Vol.100 (1)

2006

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A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100)

Journal of applied physics, 2006-08, Vol.100 (4), p.044103-044103-6

2006

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Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

Applied physics letters, 2005-04, Vol.86 (15), p.152902-152902-3

2005

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Stability of HF-etched Si(100) surfaces in oxygen ambient

Applied physics letters, 2001-12, Vol.79 (24), p.4051-4053

2001

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Feasibility, acceptability, and preliminary efficacy of a handcycling high-intensity interval training program for individuals with spinal cord injury

Spinal cord, 2021-01, Vol.59 (1), p.34-43

2021

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Thermal decomposition behavior of the HfO2/SiO2/Si system

Journal of applied physics, 2003-07, Vol.94 (2), p.928-934

2003

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Silanone ( Si = O ) on Si(100): intermediate for initial silicon oxidation

Physical review. B, Condensed matter, 2002-10, Vol.66 (16), Article 161315

2002

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Effect of nitrogen on band alignment in HfSiON gate dielectrics

Applied physics letters, 2005-11, Vol.87 (21), p.212905-212905-3

2005

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Chemical vapor deposition of HfO2 films on Si(100)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2002-03, Vol.20 (2), p.507-512

2002

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Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

Applied physics letters, 2004-03, Vol.84 (9), p.1498-1500

2004

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Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Physica Status Solidi (b), 2004-08, Vol.241 (10), p.2246-2252

2004

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Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Soft x-ray photoemission studies of the HfO2/SiO2/Si system

Modification of Electronic Properties of Graphene with Self-Assembled Monolayers

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Using practice facilitation to improve alcohol-related care in primary care: a mixed-methods pilot study protocol

Origin of the bias stress instability in single-crystal organic field-effect transistors

Energy level alignment of polythiophene/ZnO hybrid solar cells

Ga-doped ZnO single-crystal nanotips grown on fused silica by metalorganic chemical vapor deposition

High temperature stability in lanthanum and zirconia-based gate dielectrics

Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Soft x-ray photoemission studies of Hf oxidation

Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

Interface structure and thermal stability of epitaxial SrTiO3 thin films on Si (001)

A medium energy ion scattering and x-ray photoelectron spectroscopy study of physical vapor deposited thin cerium oxide films on Si(100)

Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

Stability of HF-etched Si(100) surfaces in oxygen ambient

Feasibility, acceptability, and preliminary efficacy of a handcycling high-intensity interval training program for individuals with spinal cord injury

Thermal decomposition behavior of the HfO2/SiO2/Si system

Silanone ( Si = O ) on Si(100): intermediate for initial silicon oxidation

Effect of nitrogen on band alignment in HfSiON gate dielectrics

Chemical vapor deposition of HfO2 films on Si(100)

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface

Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

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