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Control method for periodically faceted surfaces and application on AlGaAs/GaAs (631) heterostructures

Applied surface science, 2023-02, Vol.611, p.155565, Article 155565

2023

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Síndrome de Peutz-Jeghers: toma de decisiones basada en la evidencia, acerca de un caso

Revista de gastroenterología de México, 2022-04, Vol.87 (2), p.263-265

2022

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Causas de cirugía revisional, reoperaciones y readmisión posterior a cirugía bariátrica

Revista de gastroenterología de México, 2023-07, Vol.88 (3), p.232-237

2023

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Peutz-Jeghers syndrome: Evidence-based decision-making, regarding a case

Revista de Gastroenterología de México (English Edition), 2022-04, Vol.87 (2), p.263-265

2022

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Causes of revisional surgery, reoperations, and readmissions after bariatric surgery

Revista de Gastroenterología de México (English Edition), 2023-07, Vol.88 (3), p.232-237

2023

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Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy

Thin solid films, 2020-05, Vol.702, p.137969, Article 137969

2020

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Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures

Journal of crystal growth, 2021-02, Vol.555, p.125959, Article 125959

2021

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Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters

Journal of crystal growth, 2022-07, Vol.589, p.126680, Article 126680

2022

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GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2020-10, Vol.124, p.114217, Article 114217

2020

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Tumor Biology as Predictor of Mortality in Liver Transplantation for Hepatocellular Carcinoma

Transplantation proceedings, 2018-03, Vol.50 (2), p.485-492

2018

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Liver Transplantation in Hepatitis C–Infected Patients: Experience From a South American Transplant Center

Transplantation proceedings, 2018-03, Vol.50 (2), p.493-498

2018

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Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films

Journal of crystal growth, 2013-09, Vol.378, p.105-108

2013

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MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

Journal of crystal growth, 2013-09, Vol.378, p.88-91

2013

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Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy

Thin solid films, 2022-04, Vol.748, p.139147, Article 139147

2022

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Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature

Journal of crystal growth, 2012-05, Vol.347 (1), p.77-81

2012

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Litter dynamics in riverine mangrove forests in the Guayas River estuary, Ecuador

Oecologia, 1997-06, Vol.111 (1), p.109-122

1997

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Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

Journal of Spectroscopy, 2016-01, Vol.2016, p.1-8

2016

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Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

Materials letters, 2016-10, Vol.181, p.12-15

2016

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P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE

Journal of crystal growth, 2007-04, Vol.301, p.84-87

2007

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Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy

Journal of magnetism and magnetic materials, 2019-04, Vol.475, p.715-720

2019

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Characterization of n-GaN / p-GaAs NP heterojunctions

Superlattices and microstructures, 2019-12, Vol.136, p.106298, Article 106298

2019

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Band gap engineering of indium zinc oxide by nitrogen incorporation

Materials science & engineering. B, Solid-state materials for advanced technology, 2014-09, Vol.187, p.83-88

2014

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Structure and homoepitaxial growth of GaAs(6 3 1)

Applied surface science, 2006-05, Vol.252 (15), p.5530-5533

2006

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Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Applied surface science, 2015-04, Vol.333, p.92-95

2015

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Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures

Journal of crystal growth, 2013-09, Vol.378, p.100-104

2013

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Control method for periodically faceted surfaces and application on AlGaAs/GaAs (631) heterostructures

Síndrome de Peutz-Jeghers: toma de decisiones basada en la evidencia, acerca de un caso

Causas de cirugía revisional, reoperaciones y readmisión posterior a cirugía bariátrica

Peutz-Jeghers syndrome: Evidence-based decision-making, regarding a case

Causes of revisional surgery, reoperations, and readmissions after bariatric surgery

Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy

Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures

Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters

GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots

Tumor Biology as Predictor of Mortality in Liver Transplantation for Hepatocellular Carcinoma

Liver Transplantation in Hepatitis C–Infected Patients: Experience From a South American Transplant Center

Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films

MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy

Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature

Litter dynamics in riverine mangrove forests in the Guayas River estuary, Ecuador

Photoluminescence and Raman Spectroscopy Studies of Carbon Nitride Films

Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering

P-cracker cell temperature effects on the optical properties of AlGaInP:Be layers grown by SSMBE

Magnetic properties of GaAs:Mn self-assembled nanostructures grown at relatively high-temperature by Molecular Beam Epitaxy

Characterization of n-GaN / p-GaAs NP heterojunctions

Band gap engineering of indium zinc oxide by nitrogen incorporation

Structure and homoepitaxial growth of GaAs(6 3 1)

Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructures

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