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High-external-quantum-efficiency organic light-emitting devices

Optics letters, 1997-03, Vol.22 (6), p.396

1997

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Weak microcavity effects in organic light-emitting devices

Physical review. B, Condensed matter, 1998-08, Vol.58 (7), p.3730-3740

1998

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Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method

JETP letters, 2023-12, Vol.118 (Suppl 1), p.S35-S37

2023

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2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

IEEE photonics technology letters, 1999-07, Vol.11 (7), p.794-796

1999

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8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers

Applied physics letters, 1996-09, Vol.69 (11), p.1532-1534

1996

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InGaAsSb thermophotovoltaic diode: Physics evaluation

Journal of applied physics, 1999-02, Vol.85 (4), p.2247-2252

1999

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In situ laser measurements of CO and CH4 close to the surface of a burning single fuel particle

Measurement science & technology, 2002-10, Vol.13 (10), p.1545-1551

2002

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Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

Applied physics letters, 2002-10, Vol.81 (17), p.3146-3148

2002

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Organic films deposited on Si p - n junctions: Accurate measurements of fluorescence internal efficiency, and application to luminescent antireflection coatings

Journal of applied physics, 1996-10, Vol.80 (8), p.4644-4648

1996

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Photoluminescence efficiency and absorption of aluminum-tris-quinolate (Alq 3) thin films

Chemical physics letters, 1996-02, Vol.249 (5), p.433-437

1996

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High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

Applied physics letters, 1998-08, Vol.73 (9), p.1182-1184

1998

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Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K

Applied physics letters, 2000-01, Vol.76 (3), p.256-258

2000

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Direct measurements of heterobarrier leakage current and modal gain in 2.3 mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Electronics letters, 1999-02, Vol.35 (4), p.298-299

1999

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4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

Applied physics letters, 1997-06, Vol.70 (22), p.2931-2933

1997

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High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

IEEE journal of quantum electronics, 1997-12, Vol.33 (12), p.2266-2276

1997

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Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasers

Applied physics letters, 1995-04, Vol.66 (15), p.1942-1944

1995

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14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers

Applied physics letters, 1997-09, Vol.71 (9), p.1142-1144

1997

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Extraordinarily wide optical gain spectrum in 2.2–2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers

Journal of applied physics, 2001-10, Vol.90 (8), p.4281-4283

2001

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High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers

Electronics letters, 1989-08, Vol.25 (18), p.1239-1240

1989

Volltextzugriff (PDF)

Generation of electrically wavelength tunable (Δλ=40nm) singlemode laser pulses from a 1.3μm Fabry-Perot laser by self-seeding in a fibre-optic configuration

Electronics letters, 1994, Vol.30 (2), p.157-158

1994

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High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process

Journal of applied physics, 1992-07, Vol.72 (1), p.319-321

1992

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On the peculiarities of the short-time (tg < 10 ms) solid solution LPE growth onto the moving substrate

Journal of crystal growth, 1991-04, Vol.110 (4), p.955-959

1991

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Mid-infrared W quantum-well lasers for noncryogenic continuous-wave operation

Applied Optics, 2001-02, Vol.40 (6), p.806

2001

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20 nm wavelength tunable singlemode picosecond pulse generation at 1.3 μm by self-seeded gain-switched semiconductor laser

Electronics letters, 1992-11, Vol.28 (23), p.2154-2155

1992

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Dark-line-resistant, aluminum-free diode laser at 0.8 mu m

IEEE photonics technology letters, 1992-12, Vol.4 (12), p.1328-1330

1992

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High-external-quantum-efficiency organic light-emitting devices

Weak microcavity effects in organic light-emitting devices

Measurement of the Lifetime and of the Spin-Relaxation Time of Electrons in Semiconductors by the Optical-Orientation Method

2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasers

InGaAsSb thermophotovoltaic diode: Physics evaluation

In situ laser measurements of CO and CH4 close to the surface of a burning single fuel particle

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

Organic films deposited on Si p - n junctions: Accurate measurements of fluorescence internal efficiency, and application to luminescent antireflection coatings

Photoluminescence efficiency and absorption of aluminum-tris-quinolate (Alq 3) thin films

High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K

Direct measurements of heterobarrier leakage current and modal gain in 2.3 mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy

Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasers

14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers

Extraordinarily wide optical gain spectrum in 2.2–2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers

High-power (1W, CW) single-lobe operation of LPE-grown GaInAsP/GaInP (λ=O•8μm) separate-confinement single-quantum-well broad-area lasers

Generation of electrically wavelength tunable (Δλ=40nm) singlemode laser pulses from a 1.3μm Fabry-Perot laser by self-seeding in a fibre-optic configuration

High-power buried heterostructure InGaAsP/InP laser diodes produced by an improved regrowth process

On the peculiarities of the short-time (tg < 10 ms) solid solution LPE growth onto the moving substrate

Mid-infrared W quantum-well lasers for noncryogenic continuous-wave operation

20 nm wavelength tunable singlemode picosecond pulse generation at 1.3 μm by self-seeded gain-switched semiconductor laser

Dark-line-resistant, aluminum-free diode laser at 0.8 mu m

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