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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Microelectronics and reliability, 2023-11, Vol.150, p.115156, Article 115156

2023

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Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

European physical journal. Applied physics, 2010-07, Vol.51 (1), p.10304

2010

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Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1796-1800

2011

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Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-6

2022

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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers

Microelectronics and reliability, 2022-11, Vol.138, p.114693, Article 114693

2022

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Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

Applied physics letters, 2017-04, Vol.110 (16)

2017

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AlGaN/GaN HEMT on (111) single crystalline diamond

Electronics letters, 2010, Vol.46 (4), p.299-301

2010

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Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

Solid-state electronics, 2023-06, Vol.204, p.108654, Article 108654

2023

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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Thermal response and correlation between mobility and kink effect in GaN HEMTs

Microelectronic engineering, 2020-01, Vol.219, p.111148, Article 111148

2020

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Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

IEEE transactions on microwave theory and techniques, 2022-01, Vol.70 (1), p.444-452

2022

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of applied physics, 2010, Vol.107 (2), p.024504-024504-4

2010

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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Nanotechnology, 2020-10, Vol.31 (40), p.405204-405204

2020

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Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4156-4163

2019

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Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Microelectronic engineering, 2019-03, Vol.209, p.53-59

2019

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GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95016

2018

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ESD mm-Wave-Circuit Protection: 3-dB Couplers

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.5989-5994

2021

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On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75014

2019

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Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2284-2291

2017

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On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

IEEE microwave and wireless components letters, 2018-09, Vol.28 (9), p.831-833

2018

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Current Applied Physics, 2017, 17(12), , pp.1601-1608

2017

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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Microelectronics Reliability, 2020-11, Vol.114 (ISSN 0026-2714), p.113806, Article 113806

2020

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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy

Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers

Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

AlGaN/GaN HEMT on (111) single crystalline diamond

Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Thermal response and correlation between mobility and kink effect in GaN HEMTs

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

ESD mm-Wave-Circuit Protection: 3-dB Couplers

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

Searching for THz Gunn oscillations in GaN planar nanodiodes

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

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