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Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Applied physics letters, 2013-09, Vol.103 (13), p.133504-1-4

2013

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Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

Electronics (Basel), 2022-08, Vol.11 (15), p.2333

2022

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Drone Detection and Tracking Using RF Identification Signals

Sensors (Basel, Switzerland), 2023-09, Vol.23 (17), p.7650

2023

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Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2284-2291

2017

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Modeling of access resistances and channel temperature estimation for GaN HEMT

Journal of thermal analysis and calorimetry, 2022-10, Vol.147 (20), p.10991-10998

2022

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2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic engineering, 2021-02, Vol.238, p.111508, Article 111508

2021

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Design and Characterization of (140-220) GHz Frequency Compensated Power Detector

IEEE transactions on microwave theory and techniques, 2021-04, Vol.69 (4), p.2352-2356

2021

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IEEE_Xplore

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Physica status solidi. A, Applications and materials science, 2024-02, Vol.221 (3), p.n/a

2024

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A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

Journal of materials science. Materials in electronics, 2023-04, Vol.34 (10), p.892, Article 892

2023

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An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Micromachines (Basel), 2021-05, Vol.12 (5), p.549

2021

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Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

Microelectronic engineering, 2021-07, Vol.247, p.111595, Article 111595

2021

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Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5530-5535

2022

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Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

Journal of applied physics, 2011-07, Vol.110 (1), p.013701-1-6

2011

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Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality

Microelectronics and reliability, 2022-12, Vol.139, p.114847, Article 114847

2022

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A G -Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology

IEEE transactions on microwave theory and techniques, 2024-03, Vol.72 (3), p.1-15

2024

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IEEE_Xplore

Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Design of Coupled Slow-Wave CPW Millimeter-Wave Bandpass Filter Beyond 100 GHz in 55-nm BiCMOS Technology

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4259-4266

2021

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IEEE_Xplore

Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

IEEE transactions on microwave theory and techniques, 2020-06, Vol.68 (6), p.2268-2277

2020

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IEEE_Xplore

Hole trap, leakage current and barrier inhomogeneity in (Pt/Au)Al0.2Ga0.8N/GaN heterostructures

The Journal of physics and chemistry of solids, 2019-09, Vol.132, p.157-161

2019

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Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Electronics (Basel), 2021-05, Vol.10 (9), p.1115

2021

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Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

IEEE transactions on electron devices, 2010-09, Vol.57, p.2144-2154

2010

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Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT

IEEE transactions on computer-aided design of integrated circuits and systems, 2020-03, Vol.39 (3), p.552-559

2020

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IEEE_Xplore

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

IEEE transactions on microwave theory and techniques, 2019-09, Vol.67 (9), p.3732-3742

2019

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IEEE_Xplore

Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT

Micro and Nanostructures, 2024-02, Vol.186, p.207738, Article 207738

2024

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Terahertz detection in zero-bias InAs self-switching diodes at room temperature

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension

Drone Detection and Tracking Using RF Identification Signals

Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

Modeling of access resistances and channel temperature estimation for GaN HEMT

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Design and Characterization of (140-220) GHz Frequency Compensated Power Detector

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality

A G -Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology

Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

Design of Coupled Slow-Wave CPW Millimeter-Wave Bandpass Filter Beyond 100 GHz in 55-nm BiCMOS Technology

Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

Hole trap, leakage current and barrier inhomogeneity in (Pt/Au)Al0.2Ga0.8N/GaN heterostructures

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT

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