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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Microelectronics and reliability, 2023-11, Vol.150, p.115156, Article 115156

2023

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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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AlGaN/GaN HEMT on (111) single crystalline diamond

Electronics letters, 2010, Vol.46 (4), p.299-301

2010

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Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

Applied physics letters, 2017-04, Vol.110 (16)

2017

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Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers

Microelectronics and reliability, 2022-11, Vol.138, p.114693, Article 114693

2022

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Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

Solid-state electronics, 2023-06, Vol.204, p.108654, Article 108654

2023

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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Microelectronics Reliability, 2020-11, Vol.114 (ISSN 0026-2714), p.113806, Article 113806

2020

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Coplanar waveguides on BCB measured up to 760 GHz

Journal of electromagnetic waves and applications, 2021-10, Vol.35 (15), p.2051-2061

2021

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Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Journal of applied physics, 2011-04, Vol.109 (8), p.086106-086106-3

2011

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Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

Journal of applied physics, 2007-03, Vol.101 (5), p.054508-054508-6

2007

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Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115032

2014

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Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

Solid-state electronics, 2017-01, Vol.127, p.13-19

2017

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Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

Journal of applied physics, 2009-09, Vol.106 (5), p.054511-1-7

2009

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Indirect interband transition in hexagonal GaN

Journal of physics. D, Applied physics, 2011-02, Vol.44 (7), p.075105

2011

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Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1719-1723

2015

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Small-signal characteristics of AlInN/GaN HEMTs

Electronics letters, 2006, Vol.42 (13), p.779-780

2006

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Self-consistent electro-thermal simulations of AlGaN GaN diodes by means of Monte Carlo method

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35001

2015

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Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

Electronics letters, 2012-08, Vol.48 (17), p.1078-1079

2012

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105 , 093505 (2014)]

Applied physics letters, 2015-05, Vol.106 (19)

2015

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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Large signal microwave performances of high-k metal gate 28 nm CMOS technology

Electronics letters, 2012-12, Vol.48 (25), p.1627-1629

2012

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Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Electronics letters, 2008, Vol.44 (11), p.696-698

2008

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Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Solid-state electronics, 2010-11, Vol.54 (11), p.1434-1437

2010

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Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2159-2163

2012

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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

AlGaN/GaN HEMT on (111) single crystalline diamond

Parasitic channel induced by an on-state stress in AlInN/GaN HEMTs

Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers

Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Coplanar waveguides on BCB measured up to 760 GHz

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

Monte Carlo study of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

Indirect interband transition in hexagonal GaN

Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs

Small-signal characteristics of AlInN/GaN HEMTs

Self-consistent electro-thermal simulations of AlGaN GaN diodes by means of Monte Carlo method

Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105 , 093505 (2014)]

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence

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