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Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Nature communications, 2022-02, Vol.13 (1), p.645-645, Article 645

2022

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Wake‐Up Effect in HfO2‐Based Ferroelectric Films

Advanced electronic materials, 2021-01, Vol.7 (1), p.n/a

2021

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Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Nano research, 2022-04, Vol.15 (4), p.2913-2918

2022

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Down-Regulation of MiR-150 Alleviates Inflammatory Injury Induced by Interleukin 1 via Targeting Kruppel-Like Factor 2 in Human Chondrogenic Cells

Cellular physiology and biochemistry, 2018-07, Vol.47 (6), p.2579-2588

2018

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Frequency dependence on polarization switching measurement in ferroelectric capacitors

Journal of semiconductors, 2022-01, Vol.43 (1), p.14102-103

2022

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Non-volatile resistance switching in LaNiO3 films on PMN-PT substrates

Journal of physics. D, Applied physics, 2020-06, Vol.53 (32)

2020

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Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO3

Crystals (Basel), 2022-04, Vol.12 (4), p.500

2022

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Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor

Micromachines (Basel), 2021-11, Vol.12 (12), p.1436

2021

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Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film

IEEE electron device letters, 2021-09, Vol.42 (9), p.1303-1306

2021

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High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films

RSC advances, 2022-05, Vol.12 (25), p.15814-15821

2022

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High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO 3 films

RSC advances, 2022-05, Vol.12 (25), p.15814-15821

2022

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Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti-N Ratio in TiN Electrode

IEEE electron device letters, 2022-04, Vol.43 (4), p.561-564

2022

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IEEE_Xplore

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

IEEE electron device letters, 2021-09, Vol.42 (9), p.1303-1306

2021

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Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films

Ceramics international, 2024-02

2024

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Performance Optimization for Ferroelectric HfZrO x on a Ge Substrate by Modifying the Deposition Temperature

IEEE transactions on nanotechnology, 2024, p.1-5

2024

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Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature

IEEE transactions on nanotechnology, 2024, Vol.23, p.139-143

2024

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IEEE_Xplore

miR‐145 eliminates lipopolysaccharides‐induced inflammatory injury in human fibroblast‐like synoviocyte MH7A cells

Journal of cellular biochemistry, 2018-12, Vol.119 (12), p.10059-10066

2018

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Non-volatile resistance switching in LaNiO 3 films on PMN-PT substrates

Journal of physics. D, Applied physics, 2020-08, Vol.53 (32), p.325306

2020

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Etanercept in the treatment of refractory SAPHO syndrome

American journal of clinical and experimental immunology, 2016-01, Vol.5 (4), p.62-66

2016

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Resistance change effect in SrTiO3/Si (001) isotype heterojunction

Journal of applied physics, 2018-02, Vol.123 (8)

2018

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Improved Endurance of Hf₀.₅Zr₀.₅O 2 -Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode

IEEE electron device letters, 2022-04, Vol.43 (4), p.561-564

2022

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Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface

Advanced materials interfaces, 2018-04, Vol.5 (8), p.n/a

2018

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High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO films

RSC advances, 2022-05, Vol.12 (25), p.15814-15821

2022

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Retracted : miR‐145 eliminates lipopolysaccharides‐induced inflammatory injury in human fibroblast‐like synoviocyte MH7A cells

Journal of cellular biochemistry, 2018-12, Vol.119 (12), p.10059-10066

2018

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Influence of interface on the domain polarization orientation in ferroelectric Hf0.5Zr0·5O2 thin films

Ceramics international, 2024-03

2024

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Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Wake‐Up Effect in HfO2‐Based Ferroelectric Films

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Down-Regulation of MiR-150 Alleviates Inflammatory Injury Induced by Interleukin 1 via Targeting Kruppel-Like Factor 2 in Human Chondrogenic Cells

Frequency dependence on polarization switching measurement in ferroelectric capacitors

Non-volatile resistance switching in LaNiO3 films on PMN-PT substrates

Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO3

Optimization of the In Situ Biasing FIB Sample Preparation for Hafnia-Based Ferroelectric Capacitor

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO3 films

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO 3 films

Improved Endurance of Hf₀.₅Zr₀.₅O2-Based Ferroelectric Capacitor Through Optimizing the Ti-N Ratio in TiN Electrode

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films

Performance Optimization for Ferroelectric HfZrO x on a Ge Substrate by Modifying the Deposition Temperature

Performance Optimization for Ferroelectric HfZrOx on a Ge Substrate by Modifying the Deposition Temperature

miR‐145 eliminates lipopolysaccharides‐induced inflammatory injury in human fibroblast‐like synoviocyte MH7A cells

Non-volatile resistance switching in LaNiO 3 films on PMN-PT substrates

Etanercept in the treatment of refractory SAPHO syndrome

Resistance change effect in SrTiO3/Si (001) isotype heterojunction

Improved Endurance of Hf₀.₅Zr₀.₅O 2 -Based Ferroelectric Capacitor Through Optimizing the Ti–N Ratio in TiN Electrode

Reversible Resistance Switching of 2D Electron Gas at LaAlO3/SrTiO3 Heterointerface

High-performance ferroelectric nonvolatile memory based on Gd-and Ni-codoped BiFeO films

Retracted : miR‐145 eliminates lipopolysaccharides‐induced inflammatory injury in human fibroblast‐like synoviocyte MH7A cells

Influence of interface on the domain polarization orientation in ferroelectric Hf0.5Zr0·5O2 thin films

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