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Study on the synergistic effect and mechanism of inhibitors benzotriazole and pyrazole on copper surface

Journal of applied electrochemistry, 2023-08, Vol.53 (8), p.1669-1685

2023

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Application of surfactant for facilitating benzotriazole removal and inhibiting copper corrosion during post-CMP cleaning

Microelectronic engineering, 2018-12, Vol.202, p.1-8

2018

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A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal

Microelectronic engineering, 2012-10, Vol.98, p.29-33

2012

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Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model

Thin solid films, 2011-10, Vol.520 (1), p.400-403

2011

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Kinetics model incorporating both the chemical and mechanical effects on material removal for copper chemical mechanical polishing

Microelectronic engineering, 2012-03, Vol.91, p.19-23

2012

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Optimization of slurry components for a copper chemical mechanical polishing at low down pressure using response surface methodology

Microelectronic engineering, 2011, Vol.88 (1), p.99-104

2011

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Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

Journal of semiconductors, 2016-04, Vol.37 (4), p.120-124

张金刘玉岭闫辰奇何彦刚高宝红

2016

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Effect of arginine-based cleaning solution on BTA residue removal after Cu-CMP

Colloids and surfaces. A, Physicochemical and engineering aspects, 2020-02, Vol.586, p.124286, Article 124286

2020

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Theoretical and electrochemical analysis on inhibition effect of benzotriazole and 1,2,4-triazole on cobalt surface

Colloids and surfaces. A, Physicochemical and engineering aspects, 2020-04, Vol.591, p.124516, Article 124516

2020

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The Study of Specific Materials Used by the Copper Wiring CMP of GLSI

Applied Mechanics and Materials, 2013-02, Vol.307, p.368-371

2013

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Non-ionic surfactant on particles removal in post-CMP cleaning

Journal of semiconductors, 2015-02, Vol.36 (2), p.156-160

孙铭斌高宝红王辰伟苗英新段波檀柏梅

2015

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A study of FTIR and XPS analysis of alkaline‐based cleaning agent for removing Cu‐BTA residue on Cu wafer

Surface and interface analysis, 2019-05, Vol.51 (5), p.566-575

2019

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Theoretical and electrochemical analysis on inhibition effects of benzotriazole derivatives (un- and methyl) on copper surface

Journal of molecular structure, 2021-11, Vol.1243, p.130871, Article 130871

2021

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MicroRNA-432 is downregulated in cervical cancer and directly targets FN1 to inhibit cell proliferation and invasion

Oncology letters, 2019-08, Vol.18 (2), p.1475-1482

2019

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Recent advances and future developments in PVA brush scrubbing cleaning: A review

Materials science in semiconductor processing, 2022-12, Vol.152, p.107122, Article 107122

2022

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Application of an optimized alkaline cleaning solution for inhibitor removal during the post-CMP process: Performance evaluation and mechanism analysis

Journal of molecular liquids, 2023-01, Vol.369, p.120892, Article 120892

2023

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A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

Journal of semiconductors, 2010-07, Vol.31 (7), p.076002

2010

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An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers

Journal of semiconductors, 2012-04, Vol.33 (4), p.140-143

王辰伟刘玉岭牛新环田建颖高宝红张晓强

2012

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Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing

Surfaces and interfaces, 2024-07, Vol.50, p.104459, Article 104459

2024

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Characterization of Wafer Surface Topography after CMP

Advanced materials research, 2012, Vol.476-478, p.2603-2607

2012

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Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning

Journal of semiconductors, 2018-12, Vol.39 (12), p.126002

2018

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A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

Journal of semiconductors, 2010-10, Vol.31 (10), p.106004

2010

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Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning Project supported by the Major National Science and Technology Special Projects (No. 2016ZX02301003-004-007), the Natural Science Foundation of China (No. 61704046), the Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology (No. 2015007), and the Hebei Natural Science Foundation Project (No. F2018202174)

Journal of semiconductors, 2018-12, Vol.39 (12)

2018

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Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

Journal of semiconductors, 2018-12, Vol.39 (12), p.126003

2018

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Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning Project supported by the Major National Science and Technology Special Projects (No. 2016ZX02301003-004-007), the Natural Science Foundation, China (No. 61704046), and the Hebei Natural Science Foundation Project (No. F2018202174)

Journal of semiconductors, 2018-12, Vol.39 (12)

2018

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Study on the synergistic effect and mechanism of inhibitors benzotriazole and pyrazole on copper surface

Application of surfactant for facilitating benzotriazole removal and inhibiting copper corrosion during post-CMP cleaning

A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal

Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model

Kinetics model incorporating both the chemical and mechanical effects on material removal for copper chemical mechanical polishing

Optimization of slurry components for a copper chemical mechanical polishing at low down pressure using response surface methodology

Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET

Effect of arginine-based cleaning solution on BTA residue removal after Cu-CMP

Theoretical and electrochemical analysis on inhibition effect of benzotriazole and 1,2,4-triazole on cobalt surface

The Study of Specific Materials Used by the Copper Wiring CMP of GLSI

Non-ionic surfactant on particles removal in post-CMP cleaning

A study of FTIR and XPS analysis of alkaline‐based cleaning agent for removing Cu‐BTA residue on Cu wafer

Theoretical and electrochemical analysis on inhibition effects of benzotriazole derivatives (un- and methyl) on copper surface

MicroRNA-432 is downregulated in cervical cancer and directly targets FN1 to inhibit cell proliferation and invasion

Recent advances and future developments in PVA brush scrubbing cleaning: A review

Application of an optimized alkaline cleaning solution for inhibitor removal during the post-CMP process: Performance evaluation and mechanism analysis

A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers

An advanced alkaline slurry for barrier chemical mechanical planarization on patterned wafers

Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing

Characterization of Wafer Surface Topography after CMP

Optimization of cleaning process parameters to remove abrasive particles in post-Cu CMP cleaning

A new cleaning process for the metallic contaminants on a post-CMP wafer's surface

Effect of organic amine alkali and inorganic alkali on benzotriazole removal during post Cu-CMP cleaning

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