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PCMO RRAM for Integrate-and-Fire Neuron in Spiking Neural Networks

IEEE electron device letters, 2018-04, Vol.39 (4), p.484-487

2018

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Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks

IEEE electron device letters, 2018-12, Vol.39 (12), p.1832-1835

2018

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Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3967-3970

2017

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Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing

IEEE electron device letters, 2020-09, Vol.41 (9), p.1344-1347

2020

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An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3728-3733

2021

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PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP

IEEE electron device letters, 2017-09, Vol.38 (9), p.1212-1215

2017

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Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing

IEEE electron device letters, 2018-09, Vol.39 (9), p.1437-1440

2018

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A Highly Reliable and Unbiased PUF Based on Differential OTP Memory

IEEE electron device letters, 2018-08, Vol.39 (8), p.1159-1162

2018

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Hydraulic Fracture Crossing Natural Fracture at Nonorthogonal Angles: A Criterion and Its Validation

SPE production & operations, 2012, Vol.27 (1), p.20-26

2012

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Statistical Variability Analysis of SRAM Cell for Emerging Transistor Technologies

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3514-3520

2016

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An Analytical Model to Estimate FinFET's V Distribution Due to Fin-Edge Roughness

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1352-1358

2016

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Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition

Journal of applied physics, 2014-01, Vol.115 (3)

2014

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Ionic Transport Barrier Tuning by Composition in Pr1-xCaxMnO3-Based Selector-Less RRAM and Its Effect on Memory Performance

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2479-2484

2018

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Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory

IEEE electron device letters, 2015-12, Vol.36 (12), p.1310-1313

2015

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Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation

IEEE electron device letters, 2009-02, Vol.30 (2), p.171-173

2009

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Ionic Transport Barrier Tuning by Composition in Pr 1– x Ca x MnO 3 -Based Selector-Less RRAM and Its Effect on Memory Performance

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2479-2484

2018

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Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3123-3132

2009

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The First Compact Model to Determine V Distribution for DG-FinFET Due to LER

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4772-4779

2018

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On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

IEEE transactions on nanotechnology, 2013-11, Vol.12 (6), p.1178-1184

2013

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Asymmetric electric field enhancement in nanocrystal memories

IEEE electron device letters, 2005-12, Vol.26 (12), p.879-881

2005

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Nanoscale Side-Contact Enabled Three Terminal Pr 0.7 Ca 0.3 MnO 3 Resistive Random Access Memory for In-Memory Computing

IEEE electron device letters, 2020-09, Vol.41 (9), p.1344-1347

2020

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The First Compact Model to Determine [Formula Omitted] Distribution for DG-FinFET Due to LER

IEEE transactions on electron devices, 2018-01, Vol.65 (11), p.4772

2018

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Materials parameter extraction using analytical models in PCMO based RRAM

2015 73rd Annual Device Research Conference (DRC), 2015, p.87-88

2015

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An Analytical Model to Estimate Distribution of Partially Correlated Fin Edges in FinFETs Due to Fin-Edge Roughness

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1708-1715

2017

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Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAM

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.137-144

2017

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PCMO RRAM for Integrate-and-Fire Neuron in Spiking Neural Networks

Ultra-Low Energy LIF Neuron Using Si NIPIN Diode for Spiking Neural Networks

Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM

Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing

An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation

PCMO-Based RRAM and NPN Bipolar Selector as Synapse for Energy Efficient STDP

Transient Joule Heating-Based Oscillator Neuron for Neuromorphic Computing

A Highly Reliable and Unbiased PUF Based on Differential OTP Memory

Hydraulic Fracture Crossing Natural Fracture at Nonorthogonal Angles: A Criterion and Its Validation

Statistical Variability Analysis of SRAM Cell for Emerging Transistor Technologies

An Analytical Model to Estimate FinFET's V Distribution Due to Fin-Edge Roughness

Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition

Ionic Transport Barrier Tuning by Composition in Pr1-xCaxMnO3-Based Selector-Less RRAM and Its Effect on Memory Performance

Improved Off-Current and Modeling in Sub-430 °C Si p-i-n Selector for Unipolar Resistive Random Access Memory

Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation

Ionic Transport Barrier Tuning by Composition in Pr 1– x Ca x MnO 3 -Based Selector-Less RRAM and Its Effect on Memory Performance

Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under nand (FN/FN) Operation

The First Compact Model to Determine V Distribution for DG-FinFET Due to LER

On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power Considerations

Asymmetric electric field enhancement in nanocrystal memories

Nanoscale Side-Contact Enabled Three Terminal Pr 0.7 Ca 0.3 MnO 3 Resistive Random Access Memory for In-Memory Computing

The First Compact Model to Determine [Formula Omitted] Distribution for DG-FinFET Due to LER

Materials parameter extraction using analytical models in PCMO based RRAM

An Analytical Model to Estimate Distribution of Partially Correlated Fin Edges in FinFETs Due to Fin-Edge Roughness

Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAM

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