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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Nature (London), 2010-11, Vol.468 (7321), p.286-289

2010

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Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance

Applied physics letters, 2010-07, Vol.97 (3), p.033504-033504-3

2010

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How Good Can Monolayer MoS2 Transistors Be?

Nano letters, 2011-09, Vol.11 (9), p.3768-3773

2011

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Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

IEEE electron device letters, 2011-05, Vol.32 (5), p.689-691

2011

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Zener tunneling: Congruence between semi-classical and quantum ballistic formalisms

Journal of applied physics, 2012-06, Vol.111 (12)

2012

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Heteroj unction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

IEEE electron device letters, 2011, Vol.32 (5), p.689-691

2011

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Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.958-964

2013

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How Good Can Monolayer MoS 2 Transistors Be?

Nano letters, 2011-09, Vol.11 (9), p.3768-3773

2011

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How Good Can Monolayer MoS sub(2) Transistors Be?

Nano letters, 2011-09, Vol.11 (9), p.3768-3773-3768-3773

2011

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Ballistic [Formula Omitted]- [Formula Omitted] Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.958

2013

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A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm 2 Bit Density

IEEE solid-state circuits letters, 2023, Vol.6, p.161-164

2023

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A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density

2023 IEEE International Solid- State Circuits Conference (ISSCC), 2023, p.27-29

2023

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A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density

IEEE solid-state circuits letters, 2023-06, Vol.6, p.1-1

2023

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Tunneling in low-power device-design: A bottom-up view of issues, challenges, and opportunities

Ganapathi, Kartik

2013

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Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?

70th Device Research Conference, 2012, p.85-86

2012

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Monolayer MoS2 transistors - ballistic performance limit analysis

69th Device Research Conference, 2011, p.79-80

2011

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Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors

68th Device Research Conference, 2010, p.57-58

2010

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Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit

2013 IEEE International Electron Devices Meeting, 2013, p.5.6.1-5.6.4

2013

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Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance

How Good Can Monolayer MoS2 Transistors Be?

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

Zener tunneling: Congruence between semi-classical and quantum ballistic formalisms

Heteroj unction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

How Good Can Monolayer MoS 2 Transistors Be?

How Good Can Monolayer MoS sub(2) Transistors Be?

Ballistic [Formula Omitted]- [Formula Omitted] Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-nand Technology and Featuring a 23.3 Gb/mm 2 Bit Density

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3Gb/mm2 Bit Density

A 1.67Tb, 5b/Cell Flash Memory Fabricated in 192-Layer Floating Gate 3D-NAND Technology and Featuring a 23.3 Gb/mm2 Bit Density

Tunneling in low-power device-design: A bottom-up view of issues, challenges, and opportunities

Can quasi-saturation in the output characteristics of short-channel graphene field-effect transistors be engineered?

Monolayer MoS2 transistors - ballistic performance limit analysis

Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors

Dependence of intrinsic performance of transition metal dichalcogenide transistors on materials and number of layers at the 5 nm channel-length limit

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