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Nucleation Mechanism and Nanostructures Total Energy Calculation in CdTe-ZnTe-HgTe Material System

Journal of contemporary physics, 2019-10, Vol.54 (4), p.351-355

2019

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Nano-Scale Architecture of Quantum-Size Structures at the Growth from Quaternary In–As–Sb–P Liquid Phase on InAs(100) Substrate

Journal of contemporary physics, 2022-06, Vol.57 (2), p.146-159

Gambaryan, K. M.

2022

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Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

Surface science, 2010-07, Vol.604 (13), p.1127-1134

2010

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Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.162004-162004 (5)

2008

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Growth and characterization of cooperative quantum dot chains in quaternary InAsSbP material system

AIP advances, 2013-05, Vol.3 (5), p.052108-052108

2013

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Geometric Features and Numerical Analysis of InAsSbP Composition Micro- and Nanostructures Shape Transformation at Nucleation from Liquid Phase

Journal of contemporary physics, 2021-04, Vol.56 (2), p.133-138

2021

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Investigation of InAsSbP quantum dot mid-infrared sensors

Journal of sensors and sensor systems, 2015-07, Vol.4 (2), p.249-253

2015

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CdTe–ZnTe–HgTe Material System: Solid Solutions Miscibility Analysis

Journal of contemporary physics, 2020-10, Vol.55 (4), p.334-338

2020

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Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs(100) substrate

Applied physics letters, 2012-08, Vol.101 (9), p.93103

2012

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Magnetoresistance and capacitance oscillations and hysteresis in type-II InAsSbP ellipsoidal quantum dots

Journal of physics. D, Applied physics, 2015-06, Vol.48 (27), p.275302-7

2015

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Magnetoresistance Aharonov-Bohm (MAB) oscillations in elongated quantum dots

Journal of physics. Conference series, 2017-04, Vol.829 (1), p.12021

2017

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Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots

Journal of contemporary physics, 2017, Vol.52 (1), p.43-48

2017

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Fabrication and Investigation of Photovoltaic Converters Based on Polycrystalline Silicon Grown on Borosilicate Glass

Journal of contemporary physics, 2018-10, Vol.53 (4), p.351-357

2018

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Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application

Thin solid films, 2004-03, Vol.451 (Complete), p.124-127

2004

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Unmanned Aerial Vehicle Design for Application in Cyber Security

Armenian journal of physics, 2021-10, p.151-153

Gambaryan, M. K.

2021

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Competing nucleation of islands and nanopits in zinc-blend Ill-nitride quaternary material system

IOP conference series. Materials Science and Engineering, 2016-10, Vol.151 (1), p.12009

2016

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Photovoltaic and optoelectronic properties of InAs(1 0 0)-based photoconductive cells with quantum dots and nanopits

Infrared physics & technology, 2011-03, Vol.54 (2), p.114-120

2011

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Miscibility Gaps Analysis for BN–Si–C Ternary Material System

Journal of contemporary physics, 2024-03, Vol.59 (1), p.91-96

2024

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Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

Applied physics letters, 2012-01, Vol.100 (3), p.033104-033104-4

2012

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InAsSbP quantum dot mid-IR photodetectors operating at room temperature

Infrared physics & technology, 2015-05, Vol.70, p.12-14

2015

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Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells

Journal of contemporary physics, 2014-11, Vol.49 (6), p.258-263

2014

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The Ostwald ripening at nanoengineering of InAsSbP spherical and ellipsoidal quantum dots on InAs (100) surface

Journal of contemporary physics, 2013, Vol.48 (1), p.37-42

2013

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Growth features at competing nucleation of quantum dots and nanopits in Si-Ge-C ternary system

Journal of contemporary physics, 2012-07, Vol.47 (4), p.173-180

2012

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Mid-infrared photodetectors based on quaternary InAsSbP nanostructures

Journal of contemporary physics, 2012-06, Vol.47 (3), p.128-132

2012

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InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties

Technical physics letters, 2008, Vol.34 (1), p.69-71

2008

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Nucleation Mechanism and Nanostructures Total Energy Calculation in CdTe-ZnTe-HgTe Material System

Nano-Scale Architecture of Quantum-Size Structures at the Growth from Quaternary In–As–Sb–P Liquid Phase on InAs(100) Substrate

Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate

Growth and characterization of cooperative quantum dot chains in quaternary InAsSbP material system

Geometric Features and Numerical Analysis of InAsSbP Composition Micro- and Nanostructures Shape Transformation at Nucleation from Liquid Phase

Investigation of InAsSbP quantum dot mid-infrared sensors

CdTe–ZnTe–HgTe Material System: Solid Solutions Miscibility Analysis

Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs(100) substrate

Magnetoresistance and capacitance oscillations and hysteresis in type-II InAsSbP ellipsoidal quantum dots

Magnetoresistance Aharonov-Bohm (MAB) oscillations in elongated quantum dots

Narrow bandgap mid-infrared photodetectors based on InAsSbP quantum dots

Fabrication and Investigation of Photovoltaic Converters Based on Polycrystalline Silicon Grown on Borosilicate Glass

Liquid-phase electroepitaxial growth of low band-gap p-InAsPSb/n-InAs and p-InAsP/n-InAs diode heterostructures for thermo-photovoltaic application

Unmanned Aerial Vehicle Design for Application in Cyber Security

Competing nucleation of islands and nanopits in zinc-blend Ill-nitride quaternary material system

Photovoltaic and optoelectronic properties of InAs(1 0 0)-based photoconductive cells with quantum dots and nanopits

Miscibility Gaps Analysis for BN–Si–C Ternary Material System

Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings

InAsSbP quantum dot mid-IR photodetectors operating at room temperature

Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells

The Ostwald ripening at nanoengineering of InAsSbP spherical and ellipsoidal quantum dots on InAs (100) surface

Growth features at competing nucleation of quantum dots and nanopits in Si-Ge-C ternary system

Mid-infrared photodetectors based on quaternary InAsSbP nanostructures

InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties

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