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Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

Russian physics journal, 2017-11, Vol.60 (7), p.1081-1087

2017

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Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture

Russian physics journal, 2017-05, Vol.60 (1), p.90-100

2017

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Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Platinum, Palladium, Silver, and Yttrium

Russian physics journal, 2018-10, Vol.61 (6), p.1153-1159

2018

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Basic physics of semiconductor hydrogen sensors

Russian physics journal, 2008-04, Vol.51 (4), p.425-441

Gaman, V. I.

2008

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Electrical and gas-sensitive properties of a resistive thin-film sensor based on tin dioxide

Semiconductors (Woodbury, N.Y.), 2006-06, Vol.40 (6), p.704-709

2006

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Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors

Russian physics journal, 2012-05, Vol.54 (12), p.1364-1371

Gaman, V. I.

2012

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Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor

Russian physics journal, 2012-03, Vol.54 (10), p.1137-1144

Gaman, V. I.

2012

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Effect of chalcogenide elements on the electrical characteristics of GaAs MIS structures

Solid-state electronics, 1999-03, Vol.43 (3), p.583-588

1999

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Characteristics of the Semiconductor Resistive Hydrogen Sensors in the Thermo-Cyclic Operation Mode

Russian physics journal, 2014-04, Vol.56 (12), p.1427-1434

2014

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Influence of Water Vapors and Hydrogen on the Energy Band Bending in the SnO2 Microcrystals of Polycrystalline Tin Dioxide Films

Russian physics journal, 2015-06, Vol.58 (2), p.179-187

2015

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Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.366-372

2010

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Characteristics of the Semiconductor Resistive Carbon Monooxide Sensors in the Thermo-Cyclic Operation Mode

Russian physics journal, 2014-07, Vol.57 (3), p.334-340

2014

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Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3), p.334-338

2008

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Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

Semiconductors (Woodbury, N.Y.), 2008-03, Vol.42 (3)

2008

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The effect of water vapor on the electrical properties and sensitivity of thin-film gas sensors based on tin dioxide

Russian physics journal, 2008-08, Vol.51 (8), p.831-839

2008

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Effect of deep levels induced by electron irradiation upon the charge transport mechanism and the pressure-dependent electrical properties of forward-biased p+- n- n+ GaAs diodes

Solid-state electronics, 1988-06, Vol.31 (6), p.1093-1099

1988

Volltextzugriff (PDF)

Stability of characteristics of resistive hydrogen sensors based on thin tin dioxide films with deposited catalysts Pt and Pd

2015 International Siberian Conference on Control and Communications (SIBCON), 2015, p.1-4

2015

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Charge transfer mechanism in high-purity silicon-basedn +-π-p + structures

Russian physics journal, 2000-07, Vol.43 (7), p.558-567

2000

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Influence of hydrogen on the volt-ampere and volt-farad characteristics of mis silicon tunnel diodes

Russian physics journal, 1999-09, Vol.42 (9), p.777-785

1999

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Effect of hydrogen on the current-voltage characteristics of tunneling mis diodes based on gallium arsenide

Russian physics journal, 1998-01, Vol.41 (1), p.47-59

1998

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Silicon oscillistor as a thermometer with frequency output

Russian physics journal, 1995-02, Vol.38 (2), p.143-146

1995

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Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface

Semiconductors (Woodbury, N.Y.), 1997-04, Vol.31 (4), p.418-422

1997

Volltextzugriff (PDF)

Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron

Soviet Physics Journal, 1983-10, Vol.26 (10), p.938-951

Gaman, V. I.

1983

Volltextzugriff (PDF)

Energy-independent memory elements based on metal-PbO-semiconductor structures

Russian physics journal, 1992-07, Vol.35 (7), p.681-685

1992

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Kink instability of the semiconductor plasma in silicon parallelepipeds

Russian physics journal, 1992-05, Vol.35 (5), p.481-486

1992

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Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Gold

Dependences of Characteristics of Sensors Based on Tin Dioxide on the Hydrogen Concentration and Humidity of Gas Mixture

Characteristics of Hydrogen Sensors Based on Thin Tin Dioxide Films Modified with Platinum, Palladium, Silver, and Yttrium

Basic physics of semiconductor hydrogen sensors

Electrical and gas-sensitive properties of a resistive thin-film sensor based on tin dioxide

Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors

Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor

Effect of chalcogenide elements on the electrical characteristics of GaAs MIS structures

Characteristics of the Semiconductor Resistive Hydrogen Sensors in the Thermo-Cyclic Operation Mode

Influence of Water Vapors and Hydrogen on the Energy Band Bending in the SnO2 Microcrystals of Polycrystalline Tin Dioxide Films

Effect of gold on the properties of nitrogen dioxide sensors based on thin WO3 films

Characteristics of the Semiconductor Resistive Carbon Monooxide Sensors in the Thermo-Cyclic Operation Mode

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

The effect of water vapor on the electrical properties and sensitivity of thin-film gas sensors based on tin dioxide

Effect of deep levels induced by electron irradiation upon the charge transport mechanism and the pressure-dependent electrical properties of forward-biased p+- n- n+ GaAs diodes

Stability of characteristics of resistive hydrogen sensors based on thin tin dioxide films with deposited catalysts Pt and Pd

Charge transfer mechanism in high-purity silicon-basedn +-π-p + structures

Influence of hydrogen on the volt-ampere and volt-farad characteristics of mis silicon tunnel diodes

Effect of hydrogen on the current-voltage characteristics of tunneling mis diodes based on gallium arsenide

Silicon oscillistor as a thermometer with frequency output

Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface

Current-voltage characteristics of diode structures based on gallium arsenide doped by manganese or iron

Energy-independent memory elements based on metal-PbO-semiconductor structures

Kink instability of the semiconductor plasma in silicon parallelepipeds

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