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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4486-4491

2017

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Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications

IEEE transactions on microwave theory and techniques, 2015-11, Vol.63 (11), p.3747-3759

2015

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Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology

Solid-state electronics, 2017-02, Vol.128, p.172-179

2017

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In-Depth Electromagnetic Analysis of ESD Protection for Advanced CMOS Technology During Fast Transient and High-Current Surge

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.1900-1906

2014

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Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device

Solid-state electronics, 2024-05, Vol.215, p.108883, Article 108883

2024

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Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology

Microelectronics and reliability, 2017-09, Vol.76-77, p.680-684

2017

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On the Low-Frequency Noise Characterization of Z2-FET Devices

IEEE access, 2019, Vol.7, p.42551-42556

2019

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Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables

Solid-state electronics, 2022-08, Vol.194, p.108340, Article 108340

2022

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Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.1532-1536

2015

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Fully analog 28nm FD-SOI hardware solution for drift and variability mitigation of embedded PCM memories in spiking neural networks

Frontiers in neuroscience, 2024

2024

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Technology and design study of 3D physics-based inductor on FDSOI in GHz-range

Solid-state electronics, 2024-01, Vol.211, p.108804, Article 108804

2024

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Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell

IEEE electron device letters, 2019-07, Vol.40 (7), p.1084-1087

2019

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Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2598-2604

2024

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Single and compact ESD device Beta-Matrix solution based on bidirectional SCR Network in advanced 28/32 nm technology node

Solid-state electronics, 2013-09, Vol.87, p.34-42

2013

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Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices

Solid-state electronics, 2023-11, Vol.209, p.108777, Article 108777

2023

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Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy

Journal of low power electronics and applications, 2024-10, Vol.14 (4), p.50

2024

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Robust technology computer-aided design of gated quantum dots at cryogenic temperature

Applied physics letters, 2022-06, Vol.120 (26)

2022

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A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

Solid-state electronics, 2023-11, Vol.209, p.108779, Article 108779

2023

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A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application

Solid-state electronics, 2020-06, Vol.168, p.107717, Article 107717

2020

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BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology

Solid-state electronics, 2016-01, Vol.115, p.192-200

2016

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Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Solid-state electronics, 2021-12, Vol.186, p.108071, Article 108071

2021

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Investigation of built-in bipolar junction transistor in FD-SOI BIMOS

Solid-state electronics, 2019-09, Vol.159, p.177-183

2019

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A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

Solid-state electronics, 2023, Vol.209

2023

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RF performances at cryogenic temperature of inductors integrated in a FDSOI technology

Solid-state electronics, 2022-08, Vol.194, p.108285, Article 108285

2022

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Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations

Solid-state electronics, 2023-06, Vol.204, p.108626, Article 108626

2023

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications

Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28nm FD-SOI technology

In-Depth Electromagnetic Analysis of ESD Protection for Advanced CMOS Technology During Fast Transient and High-Current Surge

Analysis and 3D TCAD simulations of single-qubit control in an industrially-compatible FD-SOI device

Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology

On the Low-Frequency Noise Characterization of Z2-FET Devices

Design methodology of a 28 nm FD-SOI capacitive feedback RF LNA based on the ACM model and look-up tables

Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes

Fully analog 28nm FD-SOI hardware solution for drift and variability mitigation of embedded PCM memories in spiking neural networks

Technology and design study of 3D physics-based inductor on FDSOI in GHz-range

Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell

Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures

Single and compact ESD device Beta-Matrix solution based on bidirectional SCR Network in advanced 28/32 nm technology node

Simulation process flow for the implementation of industry-standard FD-SOI quantum dot devices

Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy

Robust technology computer-aided design of gated quantum dots at cryogenic temperature

A tunable and versatile 28 nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

A BIMOS-based 2T1C analogue spiking neuron circuit integrated in 28 nm FD-SOI technology for neuromorphic application

BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology

Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Investigation of built-in bipolar junction transistor in FD-SOI BIMOS

A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses

RF performances at cryogenic temperature of inductors integrated in a FDSOI technology

Understanding conditions for the single electron regime in 28 nm FD-SOI quantum dots: Interpretation of experimental data with 3D quantum TCAD simulations

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