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Trap Recovery by in-Situ Annealing in Fully-Depleted MOSFET With Active Silicide Resistor

IEEE electron device letters, 2021-07, Vol.42 (7), p.1085-1088

2021

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Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.594-600

2018

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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

IEEE electron device letters, 2019-05, Vol.40 (5), p.784-787

2019

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Improved Retention Characteristics of Z2-FET Employing Half Back-Gate Control

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1041-1044

2021

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3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2513-2519

2019

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Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors

IEEE electron device letters, 2020-03, Vol.41 (3), p.361-364

2020

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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3682-3688

2018

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Effects of Solanum tuberosum L. ointment on second-degree burns in mice

Veterinary World, 2023-12, Vol.16 (12), p.2440-2445

2023

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Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Novel tetra-acridine derivatives as dual inhibitors of topoisomerase II and the human proteasome

Biochemical pharmacology, 2007-06, Vol.73 (12), p.1863-1872

2007

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Temperature and Gate Leakage Influence on the Z2-FET Memory Operation

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.238-241

2019

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In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology

Solid-state electronics, 2020-06, Vol.168, p.107737, Article 107737

2020

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A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1614-1617

2011

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Improved Retention Characteristics of Z 2 -FET Employing Half Back-Gate Control

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1041-1044

2021

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Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Microelectronics and reliability, 2010-09, Vol.50 (9), p.1379-1382

2010

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Rosiglitazone evaluated for cardiovascular outcomes in oral agent combination therapy for type 2 diabetes (RECORD): a multicentre, randomised, open-label trial

The Lancet (British edition), 2009-06, Vol.373 (9681), p.2125-2135

2009

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3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z 2 -FETs

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2513-2519

2019

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Beta-Matrix ESD network: Throughout end of placement rules?

2011 IEEE International Conference on IC Design & Technology, 2011, p.1-4

2011

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Capacitance RF Characterization and Modeling of 28 FD-SOI CMOS Transistors down to Cryogenic Temperature

2023 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, p.37-40

2023

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On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology

Microelectronics and reliability, 2016-09, Vol.64, p.101-108

2016

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Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.47-50

2010

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Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

Solid-state electronics, 2019-09, Vol.159, p.12-18

2019

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Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2019, p.1-4

2019

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FDSOI for cryoCMOS electronics: device characterization towards compact model

2022 International Electron Devices Meeting (IEDM), 2022, p.34.6.1-34.6.4

2022

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1H and 13C chemical shifts for 2-aryl and 2-N-arylamino benzothiazole derivatives

Magnetic resonance in chemistry, 2006-01, Vol.44 (1), p.102-105

2006

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Trap Recovery by in-Situ Annealing in Fully-Depleted MOSFET With Active Silicide Resistor

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Improved Retention Characteristics of Z2-FET Employing Half Back-Gate Control

3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs

Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Effects of Solanum tuberosum L. ointment on second-degree burns in mice

Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing

Novel tetra-acridine derivatives as dual inhibitors of topoisomerase II and the human proteasome

Temperature and Gate Leakage Influence on the Z2-FET Memory Operation

In-situ heater for thermal assist recovery of MOS devices in 28 nm UTBB FD-SOI CMOS technology

A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node

Improved Retention Characteristics of Z 2 -FET Employing Half Back-Gate Control

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Rosiglitazone evaluated for cardiovascular outcomes in oral agent combination therapy for type 2 diabetes (RECORD): a multicentre, randomised, open-label trial

3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z 2 -FETs

Beta-Matrix ESD network: Throughout end of placement rules?

Capacitance RF Characterization and Modeling of 28 FD-SOI CMOS Transistors down to Cryogenic Temperature

On the need for a new ESD verification methodology to improve the reliability of ICs in advanced 28nm UTBB FD-SOI technology

Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells

Extended investigation of a novel MOS device for in-situ heating in 28 nm UTBB FD-SOI CMOS technology

FDSOI for cryoCMOS electronics: device characterization towards compact model

1H and 13C chemical shifts for 2-aryl and 2-N-arylamino benzothiazole derivatives

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