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Distinctive g‑Factor of Moiré-Confined Excitons in van der Waals Heterostructures

Nano letters, 2022-11, Vol.22 (21), p.8641-8646

2022

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Raman spectroscopy of GaSb1−xBix alloys with high Bi content

Applied physics letters, 2020-05, Vol.116 (20)

2020

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Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields

Physical review letters, 2010-02, Vol.104 (8), p.086401-086401, Article 086401

2010

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Radioluminescence and photoluminescence characterization of Eu and Tb doped barium stannate phosphor ceramics

Journal of alloys and compounds, 2014-03, Vol.590, p.417-423

2014

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Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications

Journal of materials science. Materials in electronics, 2018-11, Vol.29 (22), p.19588-19600

2018

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Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

Journal of physics. D, Applied physics, 2016-04, Vol.49 (16), p.165104-165108

2016

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Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

Semiconductor science and technology, 2018-07, Vol.33 (8)

2018

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Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices

Journal of physics. D, Applied physics, 2013-12, Vol.46 (50), p.505313-6

2013

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Optical and spin properties of localized and free excitons in GaBixAs1−x/GaAs multiple quantum wells

Journal of physics. D, Applied physics, 2016-08, Vol.49 (35)

2016

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Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Journal of electronic materials, 2018-03, Vol.47 (3), p.1780-1785

2018

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Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

Journal of applied physics, 2009-07, Vol.106 (2), p.023518-023518-5

2009

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Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement

Journal of physics. D, Applied physics, 2013-10, Vol.46 (40), p.402001-1-5

2013

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Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

Journal of applied physics, 2014-12, Vol.116 (23)

2014

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Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2

Nanoscale, 2022-04, Vol.14 (15), p.5758-5768

2022

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Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

Journal of applied physics, 2014-08, Vol.116 (5)

2014

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Voltage controlled electron spin dynamics in resonant tunnelling devices

Journal of physics. D, Applied physics, 2014-04, Vol.47 (16), p.1-6

2014

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Composition–Structure–Property Correlations in Rare-Earth-Doped Heavy Metal Oxyfluoride Glasses

Journal of physical chemistry. C, 2019-09, Vol.123 (36), p.22478-22490

2019

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Anomalous optical properties of GaMnAs/AlAs quantum wells grown by molecular beam epitaxy

Journal of physics. D, Applied physics, 2012-05, Vol.45 (21), p.215301-1-5

2012

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Role of interface potential barrier, Auger recombination and temporal coherence in In 0.5 Ga 0.5 As/GaAs quantum dot-based p-i-n light emitting diodes

Journal of physics. D, Applied physics, 2019-02, Vol.52 (9), p.95102

2019

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Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers

Nanoscale, 2018-01, Vol.10 (10), p.4807-4815

2018

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Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature

Journal of applied physics, 2018-01, Vol.123 (4)

2018

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Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Journal of luminescence, 2022-11, Vol.251, p.119155, Article 119155

2022

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Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dot-based p-i-n light emitting diodes

Journal of physics. D, Applied physics, 2019-02, Vol.52 (9)

2019

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Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe 2

Nanoscale, 2022-04, Vol.14 (15), p.5758-5768

2022

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Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys

Journal of alloys and compounds, 2020-01, Vol.814, p.152233, Article 152233

2020

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Distinctive g‑Factor of Moiré-Confined Excitons in van der Waals Heterostructures

Raman spectroscopy of GaSb1−xBix alloys with high Bi content

Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields

Radioluminescence and photoluminescence characterization of Eu and Tb doped barium stannate phosphor ceramics

Investigation of optical and electrical properties of erbium-doped TiO2 thin films for photodetector applications

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates

Optical and electrical control of spin polarization of two-dimensional hole gases in p-type resonant tunnelling devices

Optical and spin properties of localized and free excitons in GaBixAs1−x/GaAs multiple quantum wells

Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

Enhancement of activation energies of sharp photoluminescence lines for GaInNAs quantum wells due to quantum confinement

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe2

Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes

Voltage controlled electron spin dynamics in resonant tunnelling devices

Composition–Structure–Property Correlations in Rare-Earth-Doped Heavy Metal Oxyfluoride Glasses

Anomalous optical properties of GaMnAs/AlAs quantum wells grown by molecular beam epitaxy

Role of interface potential barrier, Auger recombination and temporal coherence in In 0.5 Ga 0.5 As/GaAs quantum dot-based p-i-n light emitting diodes

Revealing the nature of low-temperature photoluminescence peaks by laser treatment in van der Waals epitaxially grown WS2 monolayers

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature

Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Role of interface potential barrier, Auger recombination and temporal coherence in In0.5Ga0.5As/GaAs quantum dot-based p-i-n light emitting diodes

Revealing the impact of strain in the optical properties of bubbles in monolayer MoSe 2

Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys

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