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Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2563-2569

2011

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A review of recent results on diamond vacuum lateral field emission device operation in radiation environments

Microelectronic engineering, 2011-09, Vol.88 (9), p.2924-2929

2011

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.22-28

2020

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.256-261

2018

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1430-1435

2021

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Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.4004-4009

2021

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Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.611-616

2021

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.337-343

2019

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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.363-369

2023

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Digital Control for Radiation-Hardened Switching Converters in Space

IEEE transactions on aerospace and electronic systems, 2010-04, Vol.46 (2), p.761-770

2010

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Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

IEEE transactions on nuclear science, 2018-06, Vol.65 (6), p.1271-1276

2018

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Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.149-155

2017

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From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1731-1739

2013

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Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.1931-1937

2007

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Total dose effects in a linear Voltage regulator

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3816-3821

2004

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Single event burnout in power diodes: Mechanisms and models

Microelectronics and reliability, 2006-02, Vol.46 (2), p.317-325

2006

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Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

IEEE transactions on nuclear science, 2001-12, Vol.48 (6), p.1904-1912

2001

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Total-dose and single-event effects in switching DC/DC power converters

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3217-3221

2002

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Total-dose and single-event effects in DC/DC converter control circuitry

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1867-1872

2003

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Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3045-3050

2002

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Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

IEEE transactions on nuclear science, 1997-12, Vol.44 (6), p.1989-2000

1997

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Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3185-3191, Article 3185

2009

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Nanodiamond Lateral VFEM Technology for Harsh Environments

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.1061-1065

2007

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Total Ionizing Dose Effects on Ge pMOSFETs With High- k Gate Stack: On/Off Current Ratio

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.1926-1930

2009

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A review of the techniques used for modeling single-event effects in power MOSFETs

IEEE transactions on nuclear science, 1996-04, Vol.43 (2), p.546-560

1996

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Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs

A review of recent results on diamond vacuum lateral field emission device operation in radiation environments

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs

Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

Digital Control for Radiation-Hardened Switching Converters in Space

Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt

From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

Total dose effects in a linear Voltage regulator

Single event burnout in power diodes: Mechanisms and models

Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

Total-dose and single-event effects in switching DC/DC power converters

Total-dose and single-event effects in DC/DC converter control circuitry

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures

Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

Nanodiamond Lateral VFEM Technology for Harsh Environments

Total Ionizing Dose Effects on Ge pMOSFETs With High- k Gate Stack: On/Off Current Ratio

A review of the techniques used for modeling single-event effects in power MOSFETs

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