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Electrical compensation by Ga vacancies in Ga2O3 thin films

Applied physics letters, 2015-06, Vol.106 (24)

2015

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Schottky barrier height of Au on the transparent semiconducting oxide β -Ga2O3

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Raman scattering in heavily donor doped β-Ga2O3

Applied physics letters, 2020-10, Vol.117 (15)

2020

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Ohmic contacts on SnO2 produced by hydrogen plasma treatment

Applied physics letters, 2024-07, Vol.125 (4)

2024

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Enhanced magnon spin transport in NiFe2O4 thin films on a lattice-matched substrate

Applied physics letters, 2018-10, Vol.113 (16)

2018

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Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy

Journal of applied physics, 2017-10, Vol.122 (16)

2017

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On the relation of structural disorder and thermoelastic properties in ZnGa2O4 and Zn1−xMgxGa2O4 (x ≈ 0.33)

Journal of alloys and compounds, 2021-12, Vol.886, p.1, Article 161214

2021

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Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals

Semiconductor science and technology, 2015-02, Vol.30 (2)

2015

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Electroluminescence of Cr3+ and pseudo-Stark effect in β-Ga2O3 Schottky barrier diodes

Journal of applied physics, 2019-12, Vol.126 (21)

2019

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Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE

Applied physics letters, 2020-05, Vol.116 (18)

2020

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Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

APL materials, 2020-01, Vol.8 (1), p.011107-011107-10

2020

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Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

Journal of crystal growth, 2014-09, Vol.401, p.665-669

2014

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On the nature and temperature dependence of the fundamental band gap of In2O3

Physica status solidi. A, Applications and materials science, 2014-01, Vol.211 (1), p.54-58

2014

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Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Journal of physics. D, Applied physics, 2021-01, Vol.54 (3)

2021

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Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-Ga2O3 single crystal along [100], [010] and [001]

Semiconductor science and technology, 2016-11, Vol.31 (12)

2016

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beta-Ga2O3 Solid-State Devices for Fast Neutron Detection

IEEE transactions on nuclear science, 2017-06, Vol.64 (6), p.1574-1579

2017

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Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

Journal of applied physics, 2016-12, Vol.120 (22)

2016

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Surface properties of annealed semiconducting β-Ga2O3 (100) single crystals for epitaxy

Applied surface science, 2015-09, Vol.349, p.368-373

2015

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Melt growth, characterization and properties of bulk In2O3 single crystals

Journal of crystal growth, 2013-01, Vol.362, p.349-352

2013

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Scintillation and radioluminescence mechanism in β-Ga2O3 semiconducting single crystals

Heliyon, 2023-11, Vol.9 (11), p.e21240-e21240, Article e21240

2023

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Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

APL materials, 2019-02, Vol.7 (2), p.022515-022515-7

2019

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Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Journal of applied physics, 2014-02, Vol.115 (5)

2014

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Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

Journal of applied physics, 2019-05, Vol.125 (19)

2019

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Melt growth and properties of bulk BaSnO3 single crystals

Journal of physics. Condensed matter, 2017-02, Vol.29 (7), p.075701-075701

2017

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Does the Parathyroidectomy Endanger the Transplanted Kidney?

Transplantation proceedings, 2016-06, Vol.48 (5), p.1633-1636

2016

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Electrical compensation by Ga vacancies in Ga2O3 thin films

Schottky barrier height of Au on the transparent semiconducting oxide β -Ga2O3

Raman scattering in heavily donor doped β-Ga2O3

Ohmic contacts on SnO2 produced by hydrogen plasma treatment

Enhanced magnon spin transport in NiFe2O4 thin films on a lattice-matched substrate

Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy

On the relation of structural disorder and thermoelastic properties in ZnGa2O4 and Zn1−xMgxGa2O4 (x ≈ 0.33)

Temperature-dependent thermal conductivity in Mg-doped and undoped β-Ga2O3 bulk-crystals

Electroluminescence of Cr3+ and pseudo-Stark effect in β-Ga2O3 Schottky barrier diodes

Step flow growth of β-Ga2O3 thin films on vicinal (100) β-Ga2O3 substrates grown by MOVPE

Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

On the nature and temperature dependence of the fundamental band gap of In2O3

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

Temperature-dependent thermal conductivity and diffusivity of a Mg-doped insulating β-Ga2O3 single crystal along [100], [010] and [001]

beta-Ga2O3 Solid-State Devices for Fast Neutron Detection

Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model

Surface properties of annealed semiconducting β-Ga2O3 (100) single crystals for epitaxy

Melt growth, characterization and properties of bulk In2O3 single crystals

Scintillation and radioluminescence mechanism in β-Ga2O3 semiconducting single crystals

Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

Coloration and oxygen vacancies in wide band gap oxide semiconductors: Absorption at metallic nanoparticles induced by vacancy clustering—A case study on indium oxide

Indium incorporation in homoepitaxial β-Ga2O3 thin films grown by metal organic vapor phase epitaxy

Melt growth and properties of bulk BaSnO3 single crystals

Does the Parathyroidectomy Endanger the Transplanted Kidney?

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