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Estimation of the Single-Event Upset Sensitivity of Advanced SOI SRAMs

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.339-345

2018

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63-MeV Proton Beam Profile Monitoring With Radioluminescent Ce-Doped Optical Fiber Sensor

IEEE transactions on nuclear science, 2024-05, Vol.71 (5), p.1168-1174

2024

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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2878-2887

2012

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Geant4 physics processes for silicon microdosimetry simulation: Improvements and extension of the energy-range validity up to 10 GeV/nucleon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-04, Vol.325, p.97-100

2014

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Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.840-847

2011

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Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3023-3029

2014

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Improved Simulation of Ion Track Structures Using New Geant4 Models-Impact on the Modeling of Advanced Technologies Response

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2697-2703

2012

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Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

IEEE electron device letters, 2011-06, Vol.32 (6), p.773-775

2011

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Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect Transistors

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.39-45

2018

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Total Ionizing Dose Effects in FDSOI Compact Model for IC Design

IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1628-1633

2019

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TID Response of Nanowire Field-Effect Transistors: Impact of the Back-Gate Bias

IEEE transactions on nuclear science, 2020-10, Vol.67 (10), p.2172-2178

2020

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Total Ionizing Dose Response of Multiple-Gate Nanowire Field Effect Transistors

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2061-2068

2017

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Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach

Journal of lightwave technology, 2013-04, Vol.31 (8), p.1247-1254

2013

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Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4305-4313

2013

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TID Response of pMOS Nanowire Field-Effect Transistors: Geometry and Bias Dependence

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1525-1531

2018

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Potential of Copper- and Cerium-Doped Optical Fiber Materials for Proton Beam Monitoring

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.567-573

2017

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Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2842-2853

2008

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Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-10, Vol.288, p.66-73

2012

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Transient and Steady-State Radiation Response of Phosphosilicate Optical Fibers: Influence of H2 Loading

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.289-295

2020

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Performance of Ge-Doped Optical Fiber as a Thermoluminescent Dosimeter

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4251-4256

2013

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Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

IEEE transactions on electron devices, 2015-12, Vol.62 (6), p.2965-2970

2015

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Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

IEEE transactions on nuclear science, 2014-08, Vol.61 (4), p.1628-1634

2014

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Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1876-1911

2013

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Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.918-926

2012

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Dispersion of heavy ion deposited energy in nanometric electronic devices: Experimental measurements and simulation possibilities

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-12, Vol.365, p.636-640

2015

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Estimation of the Single-Event Upset Sensitivity of Advanced SOI SRAMs

63-MeV Proton Beam Profile Monitoring With Radioluminescent Ce-Doped Optical Fiber Sensor

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose

Geant4 physics processes for silicon microdosimetry simulation: Improvements and extension of the energy-range validity up to 10 GeV/nucleon

Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

Total Ionizing Dose Effects Mitigation Strategy for Nanoscaled FDSOI Technologies

Improved Simulation of Ion Track Structures Using New Geant4 Models-Impact on the Modeling of Advanced Technologies Response

Evidence of a Novel Source of Random Telegraph Signal in CMOS Image Sensors

Investigations on the Geometry Effects and Bias Configuration on the TID Response of nMOS SOI Tri-Gate Nanowire Field-Effect Transistors

Total Ionizing Dose Effects in FDSOI Compact Model for IC Design

TID Response of Nanowire Field-Effect Transistors: Impact of the Back-Gate Bias

Total Ionizing Dose Response of Multiple-Gate Nanowire Field Effect Transistors

Design of Radiation-Hardened Rare-Earth Doped Amplifiers Through a Coupled Experiment/Simulation Approach

Combined High Dose and Temperature Radiation Effects on Multimode Silica-Based Optical Fibers

TID Response of pMOS Nanowire Field-Effect Transistors: Geometry and Bias Dependence

Potential of Copper- and Cerium-Doped Optical Fiber Materials for Proton Beam Monitoring

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

Transient and Steady-State Radiation Response of Phosphosilicate Optical Fibers: Influence of H2 Loading

Performance of Ge-Doped Optical Fiber as a Thermoluminescent Dosimeter

Radiation Effects in CCD on CMOS Devices: First Analysis of TID and DDD Effects

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors

Dispersion of heavy ion deposited energy in nanometric electronic devices: Experimental measurements and simulation possibilities

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