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A physical model for dementia

Physica A, 2017-04, Vol.472, p.86-93

2017

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Self-similar transmission patterns induced by magnetic field effects in graphene

Physica. E, Low-dimensional systems & nanostructures, 2018-07, Vol.101, p.22-28

2018

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A non-extensive statistical model for time-dependent multiple breakage particle-size distribution

Physica A, 2015-11, Vol.438, p.74-80

2015

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Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type δ-Doped Quantum Wells in Si and GaAs

Physica status solidi. B. Basic research, 2002-05, Vol.231 (1), p.243-255

Gaggero-Sager, L.M.

2002

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The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

Solid state sciences, 2012-04, Vol.14 (4), p.440-444

2012

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Electron spectrum of δ-doped quantum wells by the Thomas–Fermi method at finite temperatures

Physica. B, Condensed matter, 2011-05, Vol.406 (11), p.2218-2223

2011

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Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs

Revista mexicana de física, 2015-08, Vol.61 (4), p.281-286

2015

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Modelo propuesto para la identificación y predicción de bancos en dificultades, según el contexto del Comité de Supervisión Bancaria de Basilea

Contaduría, administración, 2019, Vol.64 (4), p.120

2019

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Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells

Revista mexicana de física, 2004, Vol.50 (6), p.614-619

2004

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Binding energy of a donor impurity in GaAs δ-doped systems under electric and magnetic fields, and hydrostatic pressure

Physica. E, Low-dimensional systems & nanostructures, 2012-04, Vol.44 (7-8), p.1335-1341

2012

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Hole States in p-Type Delta-Doped ZnSe Quantum Wells

Physica status solidi. B. Basic research, 2002-07, Vol.232 (1), p.169-172

2002

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TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Electromagnetic waves (Cambridge, Mass.), 2011-08, Vol.118, p.37-56

2011

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Self-consistent calculation of transport properties in Si δ -doped GaAs quantum wells as a function of the temperature

Physica. B, Condensed matter, 2010-10, Vol.405 (20), p.4267-4270

2010

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Interface Magnetopolaron in III-V Nitride Single Heterostructures

Physica status solidi. B. Basic research, 2002-07, Vol.232 (1), p.138-141

2002

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Electronic States of GaN-Based Heterostructures in a Thomas-Fermi Approximation

physica status solidi (b), 2000-07, Vol.220 (1), p.175-179

2000

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Self-Similarity in a Cantor-Like Semiconductor Quantum Well

physica status solidi (b), 2000-07, Vol.220 (1), p.167-169

2000

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Quasi-Bound Hole States in δ-Doped Quantum Wells

physica status solidi (b), 2000-07, Vol.220 (1), p.147-151

2000

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Hole Energy Levels in p-Type δ-Doped Si Quantum Wells: Influence of the Split-Off Band

physica status solidi (b), 2000-07, Vol.220 (1), p.163-166

2000

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Thermoelectricity in massive-massless complex graphene structures

Superlattices and microstructures, 2021-09, Vol.157, p.107004, Article 107004

2021

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Differential Capacitance for the AlN/GaN Heterostructure Field Effect Transistors

Physica status solidi. B. Basic research, 2002-04, Vol.230 (2), p.335-338

2002

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Optical properties of Cantor nanostructures made from porous silicon: A sensing application

Photonics and nanostructures, 2012-10, Vol.10 (4), p.452-458

2012

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Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells

Surface science, 2003-07, Vol.537 (1), p.75-83

2003

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Electronic Structure of B δ-Doped Si Quantum Wells at Room Temperature: The High Density Limit

Physica status solidi. B. Basic research, 1998-11, Vol.210 (1), p.81-86

1998

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Hole-level structure of double δ -doped quantum wells in Si: The influence of the split-off band

Physica. B, Condensed matter, 2007-02, Vol.389 (2), p.227-233

2007

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Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects

Superlattices and microstructures, 2019-03, Vol.127, p.157-164

2019

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A physical model for dementia

Self-similar transmission patterns induced by magnetic field effects in graphene

A non-extensive statistical model for time-dependent multiple breakage particle-size distribution

Exchange Energy of a Hole Gas and the Thomas-Fermi-Dirac Approximation in p-Type δ-Doped Quantum Wells in Si and GaAs

The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

Electron spectrum of δ-doped quantum wells by the Thomas–Fermi method at finite temperatures

Simple algebraic method to study the effects of hydrostatic pressure on the fundamental parameters of a Schottky barrier of metal/n-GaAs

Modelo propuesto para la identificación y predicción de bancos en dificultades, según el contexto del Comité de Supervisión Bancaria de Basilea

Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells

Binding energy of a donor impurity in GaAs δ-doped systems under electric and magnetic fields, and hydrostatic pressure

Hole States in p-Type Delta-Doped ZnSe Quantum Wells

TRANSPORT AND ELECTRONIC PROPERTIES OF THE GaAs ALD-FET

Self-consistent calculation of transport properties in Si δ -doped GaAs quantum wells as a function of the temperature

Interface Magnetopolaron in III-V Nitride Single Heterostructures

Electronic States of GaN-Based Heterostructures in a Thomas-Fermi Approximation

Self-Similarity in a Cantor-Like Semiconductor Quantum Well

Quasi-Bound Hole States in δ-Doped Quantum Wells

Hole Energy Levels in p-Type δ-Doped Si Quantum Wells: Influence of the Split-Off Band

Thermoelectricity in massive-massless complex graphene structures

Differential Capacitance for the AlN/GaN Heterostructure Field Effect Transistors

Optical properties of Cantor nanostructures made from porous silicon: A sensing application

Thomas–Fermi–Dirac theory of the hole gas of a double p-type δ-doped GaAs quantum wells

Electronic Structure of B δ-Doped Si Quantum Wells at Room Temperature: The High Density Limit

Hole-level structure of double δ -doped quantum wells in Si: The influence of the split-off band

Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects

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