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Alterations of BRAF and HIPK2 loci predominate in sporadic pilocytic astrocytoma

Neurology, 2009-11, Vol.73 (19), p.1526-1531

2009

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Adhesive wafer bonding

Journal of applied physics, 2006-02, Vol.99 (3), p.031101-031101-28

2006

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Adhesive Wafer Bonding Using Partially Cured Benzocyclobutene for Three-Dimensional Integration

Journal of the Electrochemical Society, 2006-01, Vol.153 (4), p.G291

2006

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Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

Nineteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2004. APEC '04, 2004, Vol.1, p.516-521 Vol.1

2004

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Advanced multilayer metallization schemes with copper as interconnection metal

Thin solid films, 1993-12, Vol.236 (1), p.257-266

1993

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Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach

Microelectronic engineering, 2007-11, Vol.84 (11), p.2750-2756

2007

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Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

Journal of the Electrochemical Society, 1994-10, Vol.141 (10), p.2842-2848

1994

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1300-V 6H-SiC lateral MOSFETs with two RESURF zones

IEEE electron device letters, 2002-10, Vol.23 (10), p.624-626

2002

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InGaAsSb thermophotovoltaic diode: Physics evaluation

Journal of applied physics, 1999-02, Vol.85 (4), p.2247-2252

1999

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SiC and GaN bipolar power devices

Solid-state electronics, 2000-02, Vol.44 (2), p.277-301

2000

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XPS and AFM study of chemical mechanical polishing of silicon nitride

Thin solid films, 1998-11, Vol.333 (1), p.219-223

1998

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Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

IEEE electron device letters, 2001-05, Vol.22 (5), p.209-211

2001

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Design considerations and experimental analysis for silicon carbide power rectifiers

Solid-state electronics, 1999, Vol.43 (10), p.1945-1962

1999

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Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes

Journal of electronic materials, 1998-10, Vol.27 (10), p.1128-1135

1998

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High-voltage lateral RESURF MOSFETs on 4H-SiC

IEEE electron device letters, 2000-07, Vol.21 (7), p.356-358

2000

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Effects of annealing on carrier lifetime in 4H-SiC

Journal of applied physics, 2006-12, Vol.100 (11)

2006

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Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique

Journal of electronic materials, 2004-02, Vol.33 (2), p.94-100

2004

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Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors

IEEE transactions on electron devices, 2003-05, Vol.50 (5), p.1200-1204

2003

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Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs

IEEE electron device letters, 2002-06, Vol.23 (6), p.330-332

2002

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Copper/Benzocyclobutene Interconnects for Sub‐100 nm Integrated Circuit Technology: Elimination of High‐Resistivity Metallic Liners and High‐Dielectric Constant Polish Stops

Journal of the Electrochemical Society, 1999-04, Vol.146 (4), p.1602-1607

1999

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A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

Journal of electronic materials, 2003-11, Vol.32 (11), p.1317-1321

2003

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Effect of Copper Ions in the Slurry on the Chemical‐Mechanical Polish Rate of Titanium

Journal of the Electrochemical Society, 1994-12, Vol.141 (12), p.3512-3516

1994

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Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs

IEEE electron device letters, 2001-05, Vol.22 (5), p.212-214

2001

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Contact and via structures with copper interconnects fabricated using dual Damascene technology

IEEE electron device letters, 1994-08, Vol.15 (8), p.307-309

1994

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Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs

Journal of electronic materials, 2001-03, Vol.30 (3), p.253-259

2001

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Alterations of BRAF and HIPK2 loci predominate in sporadic pilocytic astrocytoma

Adhesive wafer bonding

Adhesive Wafer Bonding Using Partially Cured Benzocyclobutene for Three-Dimensional Integration

Analytical modeling and experimental evaluation of interconnect parasitic inductance on MOSFET switching characteristics

Advanced multilayer metallization schemes with copper as interconnection metal

Thermally induced stresses in 3D-IC inter-wafer interconnects: A combined grain-continuum and continuum approach

Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures

1300-V 6H-SiC lateral MOSFETs with two RESURF zones

InGaAsSb thermophotovoltaic diode: Physics evaluation

SiC and GaN bipolar power devices

XPS and AFM study of chemical mechanical polishing of silicon nitride

Improved high-voltage lateral RESURF MOSFETs in 4H-SiC

Design considerations and experimental analysis for silicon carbide power rectifiers

Effect of reactive ion etch-induced damage on the performance of 4H-SiC Schottky barrier diodes

High-voltage lateral RESURF MOSFETs on 4H-SiC

Effects of annealing on carrier lifetime in 4H-SiC

Recombination parameters for antimonide-based semiconductors using the radio frequency photoreflectance technique

Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors

Hysteresis in transfer characteristics in 4H-SiC depletion/accumulation-mode MOSFETs

Copper/Benzocyclobutene Interconnects for Sub‐100 nm Integrated Circuit Technology: Elimination of High‐Resistivity Metallic Liners and High‐Dielectric Constant Polish Stops

A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

Effect of Copper Ions in the Slurry on the Chemical‐Mechanical Polish Rate of Titanium

Accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs

Contact and via structures with copper interconnects fabricated using dual Damascene technology

Effect of processing conditions on inversion layer mobility and interface state density in 4H-SiC MOSFETs

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