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IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1134-1139
2017
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IEEE transactions on electron devices, 2017-06, Vol.64 (6), p.2542-2548
2017
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IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4953-4957
2020
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IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2155-2162
2010
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IEEE electron device letters, 2006-01, Vol.27 (1), p.37-39
2006
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Surface treatment effect on temperature-dependent properties of InGaP∕GaAs heterobipolar transistors
2007
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IEEE electron device letters, 2003-03, Vol.24 (3), p.162-164
2003
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IEEE electron device letters, 2004-05, Vol.25 (5), p.244-246
2004
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IEEE journal of quantum electronics, 2004-04, Vol.40 (4), p.413-419
2004
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IEEE journal of quantum electronics, 1998-10, Vol.34 (10), p.1882-1885
1998
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Semiconductors (Woodbury, N.Y.), 2012-04, Vol.46 (4), p.514-518
2012
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Semiconductors (Woodbury, N.Y.), 2011-09, Vol.45 (9), p.1231-1233
2011
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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.252-255
2007
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2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006, p.90-93
2006
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2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006, p.94-97
2006
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Solid-state electronics, 2009-02, Vol.53 (2), p.190-194
2009
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Semiconductors (Woodbury, N.Y.), 2009-07, Vol.43 (7), p.939-942
2009
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Displays, 2011-12, Vol.32 (5), p.330-333
2011
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Japanese Journal of Applied Physics, 1997-08, Vol.36 (8), p.5057-5059
1997
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2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006, p.141-143
2006
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Journal of applied physics, 2002-01, Vol.91 (2), p.672-675
2002
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2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006, p.144-147
2006
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A low damage GaN-based light-emitting diode with textured/inclined sidewalls and an air–buffer layer
2010
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Semiconductors (Woodbury, N.Y.), 2010-08, Vol.44 (8), p.1096-1100
2010
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Physica scripta, 2007-12, Vol.2007, p.293-296
2007
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