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Special role of indium nitride in the properties of related compounds and quantum structures

AIP Advances, 2024-04, Vol.14 (4), p.040704-040704-15

2024

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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Journal of crystal growth, 2016-12, Vol.456, p.80-85

2016

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Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1030

2019

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Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Journal of crystal growth, 2014-10, Vol.403, p.48-54

2014

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Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Physical review letters, 2020-02, Vol.124 (8), p.086101-086101, Article 086101

2020

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Homoepitaxial growth of HVPE-GaN doped with Si

Journal of crystal growth, 2016-12, Vol.456, p.91-96

2016

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Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Journal of crystal growth, 2014-12, Vol.407, p.52-57

2014

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Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Journal of crystal growth, 2016-12, Vol.456, p.86-90

2016

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Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN?

Journal of crystal growth, 2019-01, Vol.505, p.5-9

2019

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Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Applied physics letters, 2008-06, Vol.92 (23), p.231909-231909-3

2008

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Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies

Journal of crystal growth, 2019-02, Vol.507, p.77-86

2019

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HVPE-GaN growth on misoriented ammonothermal GaN seeds

Journal of crystal growth, 2014-10, Vol.403, p.32-37

2014

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Thermal conductivity of GaN crystals in 4.2–300 K range

Solid state communications, 2003-10, Vol.128 (2), p.69-73

2003

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High-pressure crystallization of GaN for electronic applications

Journal of physics. Condensed matter, 2002-11, Vol.14 (44), p.11055-11067

Grzegory, I

2002

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Elastic constants of gallium nitride

Journal of applied physics, 1996-03, Vol.79 (6), p.3343-3344

1996

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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Journal of crystal growth, 2012-07, Vol.350 (1), p.50-55

2012

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Contribution of the Institute of High Pressure Physics PAS (UNIPRESS) to Semiconductor Physics and Technology

Acta physica Polonica, A, 2022-11, Vol.142 (5), p.597-606

Grzegory, I.

2022

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Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Journal of crystal growth, 2009-03, Vol.311 (7), p.1632-1639

2009

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Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering

Physical review letters, 2001-01, Vol.86 (5), p.906-909

2001

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Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

Applied physics letters, 2006-04, Vol.88 (17)

2006

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Journal of crystal growth, 2016-12, Vol.456, p.73-79

2016

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Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.5-10

2012

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Preparation of a smooth GaN–Gallium solid–liquid interface

Journal of crystal growth, 2016-08, Vol.448, p.70-75

2016

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Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask

Journal of crystal growth, 2013-10, Vol.380, p.99-105

2013

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Defect-selective etching of GaN in a modified molten bases system

Journal of crystal growth, 2002-12, Vol.246 (1), p.21-24

2002

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Special role of indium nitride in the properties of related compounds and quantum structures

Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds

Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Homoepitaxial growth of HVPE-GaN doped with Si

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seeds

Growth of HVPE-GaN on native seeds – numerical simulation based on experimental results

Melting of tetrahedrally bonded semiconductors: “anomaly” of the phase diagram of GaN?

Nonradiative recombination at threading dislocations in n -type GaN: Studied by cathodoluminescence and defect selective etching

Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies

HVPE-GaN growth on misoriented ammonothermal GaN seeds

Thermal conductivity of GaN crystals in 4.2–300 K range

High-pressure crystallization of GaN for electronic applications

Elastic constants of gallium nitride

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Contribution of the Institute of High Pressure Physics PAS (UNIPRESS) to Semiconductor Physics and Technology

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering

Negative differential resistance in dislocation-free GaN∕AlGaN double-barrier diodes grown on bulk GaN

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Preparation of a smooth GaN–Gallium solid–liquid interface

Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask

Defect-selective etching of GaN in a modified molten bases system

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