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FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

Solid-state electronics, 2009-07, Vol.53 (7), p.730-734

2009

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Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Applied physics letters, 2012-10, Vol.101 (18)

2012

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Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Microelectronic engineering, 2010-03, Vol.87 (3), p.301-305

2010

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Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Thin solid films, 2012-12, Vol.525, p.20-27

2012

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Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

Microelectronic engineering, 2006-11, Vol.83 (11), p.2169-2174

2006

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Study of the La-related dipole in TiN/LaO x /HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Applied surface science, 2015-04, Vol.335, p.71-77

2015

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Investigation of point defects in HfO2 using positron annihilation spectroscopy: internal electric fields impact

Journal of physics. Conference series, 2017, Vol.791 (1)

2017

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Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Microelectronics and reliability, 2013-12, Vol.53 (12), p.1857-1862

2013

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Investigation of point defects in HfO 2 using positron annihilation spectroscopy: internal electric fields impact

Journal of physics. Conference series, 2017-01, Vol.791, p.12019

2017

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Gaseous Phase Study of the Zr-Organometallic ALD Precursor TEMAZ by Mass Spectrometry

Journal of the Electrochemical Society, 2009, Vol.156 (1), p.H71

2009

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Investigation on Oxygen Diffusion in a High-k Metal-Gate Stack for Advanced CMOS Technology by XPS

ECS transactions, 2013-01, Vol.58 (7), p.325-338

2013

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Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

Microelectronic engineering, 2011, Vol.88 (1), p.72-75

2011

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Incorporation of Cadmium Sulfide into Nanoporous Silicon by Sequential Chemical Deposition from Solution

Journal of the Electrochemical Society, 1998-07, Vol.145 (7), p.2448-2452

1998

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Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32 nm NMOSFETs

Microelectronic engineering, 2011-05, Vol.88 (5), p.569-572

2011

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Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors

Microelectronics and reliability, 2005-05, Vol.45 (5), p.925-928

2005

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Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

Microelectronic engineering, 2006-11, Vol.83 (11-12), p.2163-2168

2006

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Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives

Microelectronic engineering, 2006-11, Vol.83 (11), p.2184-2188

2006

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Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

IEEE electron device letters, 2010-02, Vol.31 (2), p.114-116

2010

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High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.700-703

2007

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Wide band frequency and in situ characterization of high permittivity insulators (high- k) for high-speed integrated passives

Microelectronic engineering, 2005-12, Vol.82 (3), p.548-553

2005

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Formation and characterization of CdS/methyl-grafted porous silicon junctions

Materials science & engineering. B, Solid-state materials for advanced technology, 2000, Vol.69, p.77-80

2000

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Electrical Characterization of Advanced MIM Capacitors With ZrO2 Insulator for High-Density Packaging and RF Applications

IEEE transactions on components, packaging, and manufacturing technology (2011), 2012-03, Vol.2 (3-4), p.502-509

2012

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Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2018, Vol.36 (1A116)

2018

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Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications

ECS transactions, 2013, Vol.58 (10), p.223-233

2013

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Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

Microelectronics and reliability, 2001-07, Vol.41 (7), p.1063-1066

2001

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FDSOI devices with thin BOX and ground plane integration for 32 nm node and below

Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications

Characterization of electrical and crystallographic properties of metal layers at deca-nanometer scale using Kelvin probe force microscope

Study of the La-related dipole in TiN/LaO x /HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Investigation of point defects in HfO2 using positron annihilation spectroscopy: internal electric fields impact

Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy

Investigation of point defects in HfO 2 using positron annihilation spectroscopy: internal electric fields impact

Gaseous Phase Study of the Zr-Organometallic ALD Precursor TEMAZ by Mass Spectrometry

Investigation on Oxygen Diffusion in a High-k Metal-Gate Stack for Advanced CMOS Technology by XPS

Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks

Incorporation of Cadmium Sulfide into Nanoporous Silicon by Sequential Chemical Deposition from Solution

Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32 nm NMOSFETs

Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors

Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives

Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal-organic precursor TBTDET

Wide band frequency and in situ characterization of high permittivity insulators (high- k) for high-speed integrated passives

Formation and characterization of CdS/methyl-grafted porous silicon junctions

Electrical Characterization of Advanced MIM Capacitors With ZrO2 Insulator for High-Density Packaging and RF Applications

Hydrogen passivation of silicium/silicium oxide interface by atomic layer deposited Hafnium Oxide and impact of silicon oxide underlayer

Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications

Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion beams

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