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Impact of development chemistry on extreme ultraviolet resist performance

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-11, Vol.28 (6), p.C6-C6S5

Gronheid, Roel

2010

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Sub-5 nm Patterning by Directed Self-Assembly of Oligo(Dimethylsiloxane) Liquid Crystal Thin Films

Advanced materials (Weinheim), 2016-12, Vol.28 (45), p.10068-10072

2016

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Three-Tone Chemical Patterns for Block Copolymer Directed Self-Assembly

ACS applied materials & interfaces, 2016-02, Vol.8 (4), p.2704-2712

2016

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Towards an all-track 300 mm process for directed self-assembly

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-11, Vol.29 (6)

2011

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Hexagonal Hole Array Patterning for Memory Applications

Journal of Photopolymer Science and Technology, 2015/06/10, Vol.28(5), pp.623-629

2015

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Directed self-assembly of block copolymers for nano-manufacturing

2015

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Directed Self-Assembly of Block Co-polymers for Nano-manufacturing

1, 2015

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Line Width Roughness mitigation in chemically amplified resist by post-litho processes

Microelectronic engineering, 2010-05, Vol.87 (5), p.1127-1130

2010

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Evidence of speckle in extreme-UV lithography

Optics express, 2012-11, Vol.20 (23), p.25970-25978

2012

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Intramolecular Directional Förster Resonance Energy Transfer at the Single-Molecule Level in a Dendritic System

Journal of the American Chemical Society, 2003-11, Vol.125 (44), p.13609-13617

2003

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Mask roughness impact on extreme UV and 193nm immersion lithography

Microelectronic engineering, 2012-10, Vol.98, p.138-141

2012

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Scale-up of a Chemo-Epitaxy Flow for Feature Multiplication Using Directed Self- Assembly of Block-Copolymers

Journal of Photopolymer Science and Technology, 2013/12/28, Vol.26(6), pp.831-839

2013

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Geometric Control of Chemically Nano-patterned Substrates for Feature Multiplication Using Directed Self-Assembly of Block Copolymers

Journal of Photopolymer Science and Technology, 2012/06/26, Vol.25(1), pp.77-81

2012

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Intramolecular Förster Energy Transfer in a Dendritic System at the Single Molecule Level

Journal of the American Chemical Society, 2002-03, Vol.124 (11), p.2418-2419

2002

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Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in nand Flash Arrays

IEEE electron device letters, 2012-02, Vol.33 (2), p.164-166

2012

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High Throughput Grating Qualification for Rating Directed Self-Assembly Pattern Performance using Optical Metrology

Journal of Photopolymer Science and Technology, 2013/06/25, Vol.26(2), pp.147-152

2013

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Ionic Liquid for Directed Self-Assembly of PS-b-PMMA

Journal of Photopolymer Science and Technology, 2016/06/21, Vol.29(5), pp.667-670

2016

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Readying Directed Self-Assembly for Patterning in Semi-Conductor Manufacturing

Journal of Photopolymer Science and Technology, 2013/12/28, Vol.26(6), pp.779-791

2013

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Assessment of Challenges in EUV Resist Outgassing and Contamination Characterization

Journal of Photopolymer Science and Technology, 2012/06/26, Vol.25(5), pp.609-616

2012

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Parameters Influencing the On- and Off-Times in the Fluorescence Intensity Traces of Single Cyanine Dye Molecules

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2002-05, Vol.106 (19), p.4808-4814

2002

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Readiness of EUV Lithography for Insertion into Manufacturing: The IMEC EUV Program

Journal of Photopolymer Science and Technology, 2013/06/25, Vol.26(5), pp.587-593

2013

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Quantitative Pattern Collapse Metrology for 193nm Immersion Lithography

Journal of Photopolymer Science and Technology, 2011/06/21, Vol.24(2), pp.233-238

2011

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On the origin and evolution of hotspots in multipatterning processes

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2023-07, Vol.41 (4)

2023

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Mask Effects on Resist Variability in Extreme Ultraviolet Lithography

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.06GC02-06GC02-5

2013

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Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

Journal of materials chemistry, 2011-01, Vol.21 (15), p.5629-5637

2011

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Impact of development chemistry on extreme ultraviolet resist performance

Sub-5 nm Patterning by Directed Self-Assembly of Oligo(Dimethylsiloxane) Liquid Crystal Thin Films

Three-Tone Chemical Patterns for Block Copolymer Directed Self-Assembly

Towards an all-track 300 mm process for directed self-assembly

Hexagonal Hole Array Patterning for Memory Applications

Directed self-assembly of block copolymers for nano-manufacturing

Directed Self-Assembly of Block Co-polymers for Nano-manufacturing

Line Width Roughness mitigation in chemically amplified resist by post-litho processes

Evidence of speckle in extreme-UV lithography

Intramolecular Directional Förster Resonance Energy Transfer at the Single-Molecule Level in a Dendritic System

Mask roughness impact on extreme UV and 193nm immersion lithography

Scale-up of a Chemo-Epitaxy Flow for Feature Multiplication Using Directed Self- Assembly of Block-Copolymers

Geometric Control of Chemically Nano-patterned Substrates for Feature Multiplication Using Directed Self-Assembly of Block Copolymers

Intramolecular Förster Energy Transfer in a Dendritic System at the Single Molecule Level

Induced Variability of Cell-to-Cell Interference by Line Edge Roughness in nand Flash Arrays

High Throughput Grating Qualification for Rating Directed Self-Assembly Pattern Performance using Optical Metrology

Ionic Liquid for Directed Self-Assembly of PS-b-PMMA

Readying Directed Self-Assembly for Patterning in Semi-Conductor Manufacturing

Assessment of Challenges in EUV Resist Outgassing and Contamination Characterization

Parameters Influencing the On- and Off-Times in the Fluorescence Intensity Traces of Single Cyanine Dye Molecules

Readiness of EUV Lithography for Insertion into Manufacturing: The IMEC EUV Program

Quantitative Pattern Collapse Metrology for 193nm Immersion Lithography

On the origin and evolution of hotspots in multipatterning processes

Mask Effects on Resist Variability in Extreme Ultraviolet Lithography

Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

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