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Long-wavelength (1.0-1.6 μm) In0.52Al0.48As/In0.53 (GaxAl1-x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetector

Applied physics letters, 1990-03, Vol.56 (11), p.1067-1068

1990

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Raum- und Zeitreisen: Studien zur Literatur und Kultur des 19. und 20. Jahrhunderts

Reprint 2015., 2003

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Care beyond the hospital ward: understanding the socio-medical trajectory of herpes simplex virus encephalitis

BMC health services research, 2017-09, Vol.17 (1), p.646-646, Article 646

2017

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High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/W

IEEE photonics technology letters, 1992-11, Vol.4 (11), p.1241-1244

1992

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Plasma Physics

1, 1971

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Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operation

IEEE journal of quantum electronics, 1991-03, Vol.27 (3), p.769-772

1991

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Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures

Electronics letters, 1985-01, Vol.21 (9), p.373-374

1985

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RSVP over IPsec tunnel mode using RFC 3175

MILCOM 2005 - 2005 IEEE Military Communications Conference, 2005, p.3246-3250 Vol. 5

2005

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A study of alloyed AuGeNi/Ag/Au based ohmic contacts on the AL0.48In0.52As/Ga0.47In0.53As system

Journal of electronic materials, 1986-05, Vol.15 (3), p.185-191

1986

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Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1986-03, Vol.4 (2), p.476-484

1986

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High-performance In0.52Al0.48As/In0.53Ga0.47As HFET compatible with optical-detector integration

IEEE electron device letters, 1991-05, Vol.12 (5), p.206-209

1991

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Monolithically integrated In0.53Ga0.47As/In0.52Al0.48As (on InP) MSM/HFET photoreceiver grown by MBE

Electronics letters, 1990-09, Vol.26 (15), p.1198

1990

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Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy

Journal of crystal growth, 1987-02, Vol.81 (1), p.383-390

1987

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Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As

Electronics letters, 1984-01, Vol.20 (11), p.446-447

1984

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High-performance In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As HFET compatible with optical-detectorintegration

IEEE electron device letters, 1991-05, Vol.12 (5), p.206-209

1991

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High-performance In sub(0.52)Al sub(0.48)As/In sub(0.53)Ga sub(0.47)As HFET compatible with optical-detector integration

IEEE electron device letters, 1991-01, Vol.12 (5), p.206-209

1991

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Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0- 1.6 micron operation

IEEE journal of quantum electronics, 1991-03, Vol.27, p.769-772

1991

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Long-wavelength (0.1-1.6 mu m) In/0.53/(Ga(x)Al(1-x))/0.47/ As/In/0.53/Ga/0.47/As MSM photodiode

IEEE transactions on electron devices, 1989-11, Vol.36 (11), p.2625

1989

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Summary Abstract: High conductance and low persistent photoconductivity in Ga0.47In0.53As/Al0.48In0.52As modulation‐doped structures with Pinchoff capabilities

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1985-03, Vol.3 (2), p.655-656

1985

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Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mum operation

IEEE journal of quantum electronics, 1991-03, Vol.27 (3), p.769-772

1991

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Monolithically integrated INI0.53Ga0.47As/In0.52Al0.48As (ON InP) MSM/HFET photoreceiver grown by MBE

Electronics letters, 1990, Vol.26 (15), p.1198-1200

1990

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Low-resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0•48In0.52As/Ga0.47In0.53As

Electronics letters, 1986, Vol.22 (5), p.285-286

1986

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Defects in Heavily-Doped MBE GaAs

Proceedings, annual meeting, Electron Microscopy Society of America, 1982, Vol.40, p.442-445

1982

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Low resistance alloyed ohmic contacts to Al(0.48)In(0.52)As /n(+)-Ga(0.47)In(0.53)As

Electronics letters, 1984-05, Vol.20, p.446

1984

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The Characterization of Alloyed NiGeAuAgAu Ohmic Contacts to AlInAs/GaInAs Heterostructure by Auger Electron Spectroscopy and Wavelength Dispersive X-Ray Analysis

MRS proceedings, 1985, Vol.48, Article 203

1985

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Long-wavelength (1.0-1.6 μm) In0.52Al0.48As/In0.53 (GaxAl1-x)0.47As/In0.53Ga0.47As metal-semiconductor-metal photodetector

Raum- und Zeitreisen: Studien zur Literatur und Kultur des 19. und 20. Jahrhunderts

Care beyond the hospital ward: understanding the socio-medical trajectory of herpes simplex virus encephalitis

High-performance back-illuminated InGaAs/InAlAs MSM photodetector with a record responsivity of 0.96 A/W

Plasma Physics

Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operation

Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures

RSVP over IPsec tunnel mode using RFC 3175

A study of alloyed AuGeNi/Ag/Au based ohmic contacts on the AL0.48In0.52As/Ga0.47In0.53As system

Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison

High-performance In0.52Al0.48As/In0.53Ga0.47As HFET compatible with optical-detector integration

Monolithically integrated In0.53Ga0.47As/In0.52Al0.48As (on InP) MSM/HFET photoreceiver grown by MBE

Characterization of strained GaInAs/AlInAs quantum well TEGFETS grown by molecular beam epitaxy

Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As

High-performance In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As HFET compatible with optical-detectorintegration

High-performance In sub(0.52)Al sub(0.48)As/In sub(0.53)Ga sub(0.47)As HFET compatible with optical-detector integration

Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0- 1.6 micron operation

Long-wavelength (0.1-1.6 mu m) In/0.53/(Ga(x)Al(1-x))/0.47/ As/In/0.53/Ga/0.47/As MSM photodiode

Summary Abstract: High conductance and low persistent photoconductivity in Ga0.47In0.53As/Al0.48In0.52As modulation‐doped structures with Pinchoff capabilities

Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mum operation

Monolithically integrated INI0.53Ga0.47As/In0.52Al0.48As (ON InP) MSM/HFET photoreceiver grown by MBE

Low-resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0•48In0.52As/Ga0.47In0.53As

Defects in Heavily-Doped MBE GaAs

Low resistance alloyed ohmic contacts to Al(0.48)In(0.52)As /n(+)-Ga(0.47)In(0.53)As

The Characterization of Alloyed NiGeAuAgAu Ohmic Contacts to AlInAs/GaInAs Heterostructure by Auger Electron Spectroscopy and Wavelength Dispersive X-Ray Analysis

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