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Empirical Model for the Effective Electron Mobility in Silicon Nanowires

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3601-3607

2014

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High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

IEEE journal of the Electron Devices Society, 2016-01, Vol.4 (1), p.1-6

2016

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Performance Fluctuations in 10-nm Trigate Metal--Oxide--Semiconductor Field-Effect Transistors: Impact of the Channel Geometry

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CC19-04CC19-7

2013

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On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1), p.33-38

2003

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Theoretical Investigation of Trigate AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3335-3341

2013

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RF Performance of Trigate GaN HEMTs

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4255-4261

2016

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Trap-assisted tunnelling current in MIM structures

Central European journal of physics, 2011-02, Vol.9 (1), p.230-241

2011

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Graphene Nanoribbons for Electronic Devices

Annalen der Physik, 2017-11, Vol.529 (11), p.n/a

2017

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Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

Applied surface science, 2017-02, Vol.395, p.122-130

2017

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Simulation of 50-nm Gate Graphene Nanoribbon Transistors

Electronics (Basel), 2016-03, Vol.5 (1), p.3-3

2016

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An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2562-2565

2007

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Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.34-37

2020

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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Applied surface science, 2014-09, Vol.312, p.68-73

2014

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Performance of tri-gate AlGaN/GaN HEMTs

2016 46th European Solid-State Device Research Conference (ESSDERC), 2016, p.176-179

2016

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2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates

Materials science forum, 2010, Vol.645-648, p.1219-1222

2010

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Coupled Defect Level Recombination in the P—N Junction

Journal of Electrical Engineering, 2011-11, Vol.62 (6), p.355-358

2011

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Electron mobility in silicon nanowire mosfets

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014, p.1-4

2014

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Vertical design of InN field effect transistors

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.428-431

2010

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Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

MRS proceedings, 2009, Vol.1202 (1), Article 1202-I04-08

2009

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MOSFET scaling: Impact of two-dimensional channel materials

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016, p.466-469

2016

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A new model of trap assisted band-to-band tunnelling

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.195-198

2010

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Current transport in MIM Structures

2009 32nd International Spring Seminar on Electronics Technology, 2009, p.1-4

2009

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Empirical Model for the Effective Electron Mobility in Silicon Nanowires

High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers

Performance Fluctuations in 10-nm Trigate Metal--Oxide--Semiconductor Field-Effect Transistors: Impact of the Channel Geometry

On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

Theoretical Investigation of Trigate AlGaN/GaN HEMTs

RF Performance of Trigate GaN HEMTs

Trap-assisted tunnelling current in MIM structures

Graphene Nanoribbons for Electronic Devices

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times

Performance of tri-gate AlGaN/GaN HEMTs

2H-AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) Substrates

Coupled Defect Level Recombination in the P—N Junction

Electron mobility in silicon nanowire mosfets

Vertical design of InN field effect transistors

Cubic AlGaN/GaN Hetero-Field Effect Transistors with Normally On and Normally Off Operation

MOSFET scaling: Impact of two-dimensional channel materials

A new model of trap assisted band-to-band tunnelling

Current transport in MIM Structures

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