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Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Journal of applied physics, 2001-06, Vol.89 (12), p.8017-8021

2001

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Heteroepitaxial growth of GaSb on Si(0 0 1) substrates

Journal of crystal growth, 2004-03, Vol.264 (1), p.21-25

2004

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High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.1707-1710

2009

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Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells

Applied physics letters, 2012-02, Vol.100 (9)

2012

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Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2016-01, Vol.30 (1), p.1550248

2016

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Over 1.3 μm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

Electronics letters, 2004-09, Vol.40 (18), p.1120-1121

2004

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Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1514-1518

2006

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Microwave induced Shubnikov–de Hass-type oscillation in InGaAs/InAlAs heterostructures

Physica. E, Low-dimensional systems & nanostructures, 2006-08, Vol.34 (1), p.393-396

2006

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Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region

Electronics letters, 2006-05, Vol.42 (10), p.600-601

2006

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Molecular beam epitaxy and characterization of InGaAs∕AlAs∕AlAsSb coupled double quantum wells with extremely thin coupling barriers

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-05, Vol.28 (3), p.C3-C3C28

2010

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Over 1.3 [micro sign]m CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

Electronics letters, 2004, Vol.40 (18), p.1120

2004

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Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.65-69

2001

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Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells

Physica status solidi. C, 2012-02, Vol.9 (2), p.334-337

2012

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Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-based all-optical switches

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm

Journal of crystal growth, 2013-09, Vol.378, p.134-136

2013

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Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field-effect-transistor

Physica. B, Condensed matter, 1999-12, Vol.272 (1-4), p.114-116

Sato, Y

1999

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Over 1.3 μ m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates

Applied physics letters, 2005-05, Vol.86 (20), p.203118-203118-3

2005

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Stacking of over 150 layers of InAs quantum dots on InP(311)B substrates

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.85-88

2004

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Initial growth stage of GaSb on Si(0 0 1) substrates with AlSb initiation layers

Journal of crystal growth, 2005-10, Vol.283 (3), p.297-302

2005

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Spontaneous spin-splitting observed in resonant tunneling diode with narrow band-gap asymmetric quantum well

Physica. E, Low-dimensional systems & nanostructures, 2002-03, Vol.13 (2-4), p.815-818

2002

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Large and anisotropic zero-field spin-splittings in InxGa1−xAs/InyAl1−yAs (x,y>0.6) heterojunctions

Physica. E, Low-dimensional systems & nanostructures, 2000-05, Vol.7 (3-4), p.992-996

2000

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Four-wave mixing in InGaAs/AlAsSb intersubband transition optical waveguides

Journal of applied physics, 2011-09, Vol.110 (6), p.063114-063114-7

2011

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Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

Applied physics letters, 2010-03, Vol.96 (10), p.101901-101901-3

2010

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Exciton spin relaxation in In 0.53 Ga 0.47 As/AlAs 0.56 Sb 0.44 quantum wells

Applied physics letters, 2012-02, Vol.100 (9), p.092401-092401-3

2012

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Growth of InAs Quantum Dots on a Low Lattice-Mismatched AlGaSb Layer Prepared on GaAs (001) Substrates

Solid state phenomena, 2004-01, Vol.99-100, p.49-54

2004

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Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions

Heteroepitaxial growth of GaSb on Si(0 0 1) substrates

High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells

Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy

Over 1.3 μm CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy

Microwave induced Shubnikov–de Hass-type oscillation in InGaAs/InAlAs heterostructures

Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region

Molecular beam epitaxy and characterization of InGaAs∕AlAs∕AlAsSb coupled double quantum wells with extremely thin coupling barriers

Over 1.3 [micro sign]m CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate

Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions

Photoreflectance study of InGaAs/AlAsSb coupled double quantum wells

Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-based all-optical switches

InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nm

Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field-effect-transistor

Over 1.3 μ m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates

Stacking of over 150 layers of InAs quantum dots on InP(311)B substrates

Initial growth stage of GaSb on Si(0 0 1) substrates with AlSb initiation layers

Spontaneous spin-splitting observed in resonant tunneling diode with narrow band-gap asymmetric quantum well

Large and anisotropic zero-field spin-splittings in InxGa1−xAs/InyAl1−yAs (x,y>0.6) heterojunctions

Four-wave mixing in InGaAs/AlAsSb intersubband transition optical waveguides

Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells

Exciton spin relaxation in In 0.53 Ga 0.47 As/AlAs 0.56 Sb 0.44 quantum wells

Growth of InAs Quantum Dots on a Low Lattice-Mismatched AlGaSb Layer Prepared on GaAs (001) Substrates

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