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Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Journal of applied physics, 2010-01, Vol.107 (2), p.024512-024512-7

2010

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Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Nanoscale, 2016-07, Vol.8 (29), p.13915-13923

2016

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Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Applied physics letters, 2010-12, Vol.97 (24)

2010

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Material relaxation in chalcogenide OTS SELECTOR materials

Microelectronic engineering, 2019-07, Vol.215, p.110996, Article 110996

2019

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H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Journal of applied physics, 2015-03, Vol.117 (12)

2015

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Impact of La–OH bonds on the retention of Co/LaSiO CBRAM

Applied physics letters, 2020-10, Vol.117 (15)

2020

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Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Applied physics letters, 2011-08, Vol.99 (5)

2011

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Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

IEEE electron device letters, 2015-08, Vol.36 (8), p.775-777

2015

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Scalability of valence change memory: From devices to tip-induced filaments

AIP advances, 2016-08, Vol.6 (8), p.085009-085009-6

2016

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Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2363-2368

2009

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Optical transitions in single-wall boron nitride nanotubes

Physical review letters, 2005-01, Vol.94 (3), p.037405.1-037405.4, Article 037405

2005

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Modeling of uniform switching RRAM devices and impact of critical defects

Microelectronic engineering, 2017-06, Vol.178, p.93-97

2017

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Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

IEEE electron device letters, 2016-09, Vol.37 (9), p.1112-1115

2016

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On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Journal of applied physics, 2014-10, Vol.116 (13)

2014

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Quantitative retention model for filamentary oxide-based resistive RAM

Microelectronic engineering, 2017-06, Vol.178, p.38-41

2017

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Design-technology co-optimization for OxRRAM-based synaptic processing unit

2017 Symposium on VLSI Technology, 2017, p.T178-T179

2017

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Towards barrier height modulation in HfO2/TiN by oxygen scavenging ― Dielectric defects or metal induced gap states?

Microelectronic engineering, 2011-07, Vol.88 (7), p.1251-1254

2011

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Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Microelectronic engineering, 2013-09, Vol.109, p.177-181

2013

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Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

Thin solid films, 2008-04, Vol.516 (12), p.4083-4092

2008

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Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

Thin solid films, 2013-04, Vol.533, p.29-33

2013

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Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Material relaxation in chalcogenide OTS SELECTOR materials

H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells

Impact of La–OH bonds on the retention of Co/LaSiO CBRAM

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

Scalability of valence change memory: From devices to tip-induced filaments

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

Optical transitions in single-wall boron nitride nanotubes

Modeling of uniform switching RRAM devices and impact of critical defects

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

Novel Flexible and Cost-Effective Retention Assessment Method for TMO-Based RRAM

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

Quantitative retention model for filamentary oxide-based resistive RAM

Design-technology co-optimization for OxRRAM-based synaptic processing unit

Towards barrier height modulation in HfO2/TiN by oxygen scavenging ― Dielectric defects or metal induced gap states?

Statistical insight into controlled forming and forming free stacks for HfOx RRAM

Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

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