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VLS growth of GaN nanowires on various substrates

Journal of crystal growth, 2008-11, Vol.310 (23), p.5123-5128

2008

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VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE

Journal of crystal growth, 2008-11, Vol.310 (23), p.5106-5110

2008

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Selective-area growth of GaAs and InAs nanowires-homo-and heteroepitaxy using SiNx templates

Journal of crystal growth, 2008-11, Vol.310 (23), p.5093-5097

2008

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Lateral homogeneity of Schottky contacts on n-type ZnO

Applied physics letters, 2004-01, Vol.84 (1), p.79-81

2004

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Electron effective mass and phonon modes in GaAs incorporating boron and indium

Applied physics letters, 2007-04, Vol.90 (18), p.182110-182110-3

2007

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MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (0 0 1) GaAs

Journal of crystal growth, 2003-02, Vol.248, p.468-473

2003

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Boron lattice site location in (BGa)As and (BGa)P thin films studied using RBS and NRA with a channeled He + ion beam

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-06, Vol.268 (11), p.2069-2073

2010

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MOVPE growth and real structure of vertical-aligned GaAs nanowires

Journal of crystal growth, 2007, Vol.298, p.625-630

2007

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Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

Journal of crystal growth, 2004-12, Vol.272 (1), p.732-738

2004

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Growth and characterization of ZnO nanostructures on sapphire substrates

Journal of crystal growth, 2008-11, Vol.310 (23), p.5134-5138

2008

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Fabrication of III-V nano- and microtubes using MOVPE grown materials

Physica status solidi. A, Applications and materials science, 2006-04, Vol.203 (5), p.817-824

2006

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Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates

Journal of crystal growth, 2008-11, Vol.310 (23), p.5093-5097

2008

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MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

Crystal research and technology (1979), 2006-02, Vol.41 (2), p.111-116

2006

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Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths

Journal of applied physics, 2001-05, Vol.89 (9), p.4927-4938

2001

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a-Si/SiOx Bragg-reflectors on micro-structured InP

Thin solid films, 2005-07, Vol.483 (1-2), p.257-260

2005

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Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Journal of applied physics, 1999-08, Vol.86 (4), p.2025-2033

1999

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Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors

Thin solid films, 2002-09, Vol.416 (1-2), p.224-232

2002

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Effect of localized B and N states on the magneto-transport of (B,Ga,In)As and (Ga,In)(N,As)

Physica Status Solidi (b), 2007-01, Vol.244 (1), p.431-436

2007

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Investigation of GaNxP1−x/GaP LED structure optical properties

Journal of electronic materials, 2006-04, Vol.35 (4), p.654-657

2006

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Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17 μm)

Journal of crystal growth, 2004-12, Vol.272 (1), p.642-649

2004

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Optical Hall effect studies on modulation-doped Alx Ga1-x As:Si/GaAs quantum wells

Physica status solidi. C, 2008-05, Vol.5 (5), p.1386-1390

2008

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Spectra of lateral modes in the laser diode emission studied by near-field scanning optical microscopy

Laser physics, 2005-12, Vol.15 (12), p.1623-1628

2005

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Properties of InGaAs/GaAs QW coupled edge and surface emitting tilted cavity lasers

Laser physics letters, 2007-03, Vol.4 (3), p.200-203

2007

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The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP

Thin solid films, 2001-07, Vol.392 (1), p.85-90

2001

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A Raman study of GaAsN, GaInAsN layers on bevelled samples

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.87-90

2002

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VLS growth of GaN nanowires on various substrates

VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE

Selective-area growth of GaAs and InAs nanowires-homo-and heteroepitaxy using SiNx templates

Lateral homogeneity of Schottky contacts on n-type ZnO

Electron effective mass and phonon modes in GaAs incorporating boron and indium

MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (0 0 1) GaAs

Boron lattice site location in (BGa)As and (BGa)P thin films studied using RBS and NRA with a channeled He + ion beam

MOVPE growth and real structure of vertical-aligned GaAs nanowires

Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers

Growth and characterization of ZnO nanostructures on sapphire substrates

Fabrication of III-V nano- and microtubes using MOVPE grown materials

Selective-area growth of GaAs and InAs nanowires—homo- and heteroepitaxy using templates

MOVPE growth of GaAs on Ge substrates by inserting a thin low temperature buffer layer

Model dielectric function spectra of GaAsN for far-infrared and near-infrared to ultraviolet wavelengths

a-Si/SiOx Bragg-reflectors on micro-structured InP

Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs

Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors

Effect of localized B and N states on the magneto-transport of (B,Ga,In)As and (Ga,In)(N,As)

Investigation of GaNxP1−x/GaP LED structure optical properties

Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (λ≈1.17 μm)

Optical Hall effect studies on modulation-doped Alx Ga1-x As:Si/GaAs quantum wells

Spectra of lateral modes in the laser diode emission studied by near-field scanning optical microscopy

Properties of InGaAs/GaAs QW coupled edge and surface emitting tilted cavity lasers

The influence of alternative group-V sources on heterointerface quality in the system GaInAs(P) on InP

A Raman study of GaAsN, GaInAsN layers on bevelled samples

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