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Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si

Nature (London), 2002-04, Vol.416 (6883), p.826-829

2002

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Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

Physical review letters, 2005-04, Vol.94 (16), p.165501.1-165501.4, Article 165501

2005

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

IEEE electron device letters, 2003-04, Vol.24 (4), p.209-211

2003

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On the FinFET extension implant energy

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.285-290

2003

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of electronic materials, 2004-08, Vol.33 (8), p.912-915

2004

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Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes

Physical review letters, 2003-09, Vol.91 (12), p.125505-125505, Article 125505

2003

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Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon

Thin solid films, 2006-05, Vol.504 (1), p.121-125

2006

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Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

Journal of crystal growth, 2003-04, Vol.251 (1-4), p.837-842

2003

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GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied physics letters, 2003-07, Vol.83 (1), p.180-182

2003

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Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

Journal of applied physics, 2004-06, Vol.95 (11), p.6048-6053

2004

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Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

IEEE transactions on electron devices, 2004-05, Vol.51 (5), p.669-676

2004

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Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Applied physics letters, 2001-09, Vol.79 (13), p.1983-1985

2001

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied physics letters, 2004-01, Vol.84 (3), p.434-436

2004

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The effect of fluorine from BF sub(2) source/drain extension implants on performance of PMOS transistors with thin gate oxides

IEEE electron device letters, 2001-06, Vol.22 (6), p.284-286

2001

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Transient-enhanced diffusion in shallow-junction formation

Journal of electronic materials, 2002-10, Vol.31 (10), p.999-1003

2002

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Imaging Single Dopant Atoms and Nanoclusters in Highly n-type Bulk Si

Microscopy and microanalysis, 2002-08, Vol.8 (S02), p.1614-1615

2002

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Superlattice ultrasonic generation

Journal of physics. Conference series, 2011-01, Vol.278 (1), p.012028-4

2011

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Enhanced low temperature electrical activation of B in Si

Applied physics letters, 2003-01, Vol.82 (2), p.215-217

2003

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Amorphous layer depth dependence on implant parameters during Si self-implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.379-382

2005

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Depth dependence of {311} defect dissolution

Applied physics letters, 2001-09, Vol.79 (10), p.1429-1431

2001

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Device characteristics of Si PMOSFETs with decaborane (B^sub 10^H^sub 14^) or elemental B extension implants

Electronics letters, 2004-01, Vol.40 (2), p.1

2004

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Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Applied physics letters, 2001-08, Vol.79 (9), p.1273-1275

2001

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Device characteristics of Si PMOSFETs with decaborane (B sub( 10)H sub( 14)) or elemental B extension implants

Electronics letters, 2004-01, Vol.40 (2), p.1-1

2004

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Depth dependence of {l_brace}311{r_brace} defect dissolution

Applied physics letters, 2001-09, Vol.79 (10)

2001

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The effect of fluorine from BF(2) source/drain extensionimplants on performance of PMOS transistors with thin gate oxides

IEEE electron device letters, 2001-06, Vol.22 (6), p.284-286

2001

Volltextzugriff (PDF)

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Atomic-scale imaging of individual dopant atoms and clusters in highly n -type bulk Si

Vacancy-impurity complexes in highly Sb-doped Si grown by molecular beam epitaxy

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

On the FinFET extension implant energy

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes

Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Time-resolved reflectance studies of silicon during laser thermal processing of amorphous silicon gates on ultrathin gate oxides

Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices

Binding energy of vacancies to clusters formed in Si by high-energy ion implantation

Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

The effect of fluorine from BF sub(2) source/drain extension implants on performance of PMOS transistors with thin gate oxides

Transient-enhanced diffusion in shallow-junction formation

Imaging Single Dopant Atoms and Nanoclusters in Highly n-type Bulk Si

Superlattice ultrasonic generation

Enhanced low temperature electrical activation of B in Si

Amorphous layer depth dependence on implant parameters during Si self-implantation

Depth dependence of {311} defect dissolution

Device characteristics of Si PMOSFETs with decaborane (B^sub 10^H^sub 14^) or elemental B extension implants

Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon

Device characteristics of Si PMOSFETs with decaborane (B sub( 10)H sub( 14)) or elemental B extension implants

Depth dependence of {l_brace}311{r_brace} defect dissolution

The effect of fluorine from BF(2) source/drain extensionimplants on performance of PMOS transistors with thin gate oxides

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