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Strain evolution in hydrogen-implanted silicon

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A177-A180

2003

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Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Journal of applied physics, 2024-01, Vol.135 (2)

2024

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Temperature dependence of hydrogen-induced exfoliation of InP

Applied physics letters, 2004-07, Vol.85 (2), p.236-238

2004

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Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

Journal of crystal growth, 2008-02, Vol.310 (3), p.562-569

2008

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Thermal conductivity of nanoporous bismuth thin films

Applied physics letters, 2004-03, Vol.84 (11), p.1883-1885

2004

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Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution

Surface & coatings technology, 2006-12, Vol.201 (6), p.2724-2732

2006

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Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Journal of physics. D, Applied physics, 2005-05, Vol.38 (10A), p.A174-A178

2005

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Comparison of arsenide and phosphide based graded buffer layers used in inverted metamorphic solar cells

Journal of applied physics, 2012-07, Vol.112 (2)

2012

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Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Journal of electronic materials, 2005-06, Vol.34 (6), p.859-863

2005

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Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2013-03, Vol.564, p.408-412

2013

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SiC substrate defects and III-N heteroepitaxy

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A102-A106

2003

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Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

Journal of crystal growth, 2007-02, Vol.299 (2), p.277-281

2007

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X-ray scattering techniques for assessment of III–V wafer bonding

Journal of physics. D, Applied physics, 2003-05, Vol.36 (10A), p.A236-A240

2003

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Wafer bonding for III-V on insulator structures

Journal of electronic materials, 2003-08, Vol.32 (8), p.877-881

2003

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Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications

Physica status solidi. A, Applications and materials science, 2007-08, Vol.204 (8), p.2675-2681

2007

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High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

Applied physics letters, 2000-05, Vol.76 (19), p.2680-2682

2000

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Grazing Incidence In-plane Diffraction Measurement of In-plane Mosaic with Microfocus X-ray Tubes

Crystal research and technology (1979), 2002-07, Vol.37 (7), p.645-653

2002

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Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon

Journal of electronic materials, 2004-06, Vol.33 (6), p.552-555

2004

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Compliant effect of low-temperature Si buffer for SiGe growth

Applied physics letters, 2001-01, Vol.78 (4), p.454-456

2001

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The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters

Journal of the Electrochemical Society, 2007, Vol.154 (4), p.H293

2007

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Direct measurement of twist mosaic in epitaxial GaN

Physica status solidi. A, Applied research, 2003-01, Vol.195 (1), p.265-270

2003

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Synthesis of Si1-yCy alloys by molecular beam epitaxy

Applied physics letters, 1992-01, Vol.60 (3), p.356-358

1992

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Misfit dislocation interactions in low mismatch p/p+ Si

Journal of physics. D, Applied physics, 2001-05, Vol.34 (10A), p.A128-A132

2001

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Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

Applied physics letters, 1990-03, Vol.56 (11), p.1040-1042

1990

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Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers

Materials science forum, 2004-01, Vol.457-460, p.1605-1608

2004

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Strain evolution in hydrogen-implanted silicon

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Temperature dependence of hydrogen-induced exfoliation of InP

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

Thermal conductivity of nanoporous bismuth thin films

Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution

Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Comparison of arsenide and phosphide based graded buffer layers used in inverted metamorphic solar cells

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Dependence of the hardness of AlxGa1−xAs on composition and effect of oxidation

SiC substrate defects and III-N heteroepitaxy

Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

X-ray scattering techniques for assessment of III–V wafer bonding

Wafer bonding for III-V on insulator structures

Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications

High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

Grazing Incidence In-plane Diffraction Measurement of In-plane Mosaic with Microfocus X-ray Tubes

Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon

Compliant effect of low-temperature Si buffer for SiGe growth

The Surface Morphology of Hydrogen-Exfoliated InP and Exfoliation Parameters

Direct measurement of twist mosaic in epitaxial GaN

Synthesis of Si1-yCy alloys by molecular beam epitaxy

Misfit dislocation interactions in low mismatch p/p+ Si

Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy

Effects of Crystallinity on Hydrogen Exfoliation of GaN Layers

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