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Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method

Journal of applied physics, 1990-05, Vol.67 (10), p.6286-6291

1990

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Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures

Journal of applied physics, 1991-07, Vol.70 (1), p.204-208

1991

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Degradation and intensity fluctuations in CW AlGaAs double-heterostructure junction lasers

IEEE journal of quantum electronics, 1975-07, Vol.11 (7), p.545-550

1975

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Radiation hardnessin InGaAsP lasers

2008 20th International Conference on Indium Phosphide and Related Materials, 2008, p.1-3

Gonda, S.-i.

2008

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Very-low-pressure deposition by electron cyclotron resonance plasma chemical vapor deposition method

Journal of applied physics, 1990-05, Vol.67 (10), p.6281-6285

1990

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Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6A), p.L661-L664

1997

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High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3A), p.L289-L292

1996

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New III-V compound semiconductors TlInGaP for 0.9 μm to over 10 μm wavelength range laser diodes and their first successful growth

Japanese journal of applied physics, 1996-07, Vol.35 (7B), p.L876-L879

1996

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Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.245-248

2007

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Gas source molecular beam epitaxial growth of GaN1-xPx (x ≤ 0.015) using ion-removed electron cyclotron resonance radical cell

Japanese journal of applied physics, 1996, Vol.35 (12B), p.L1634-L1637

1996

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Very low resistance ohmic contacts to n-GaN

Journal of electronic materials, 1998-07, Vol.27 (7), p.829-832

1998

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Preparation and structure of carbon film deposited by a mass-separated C+ ion beam

Journal of applied physics, 1984, Vol.55 (1), p.188-193

1984

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Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.3818-3820

1997

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Analysis of intensity fluctuations in a junction laser with low quantum-efficiency regions

IEEE journal of quantum electronics, 1976-01, Vol.12 (1), p.47-53

1976

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Photoluminescence wavelength dependence on layer structure of GaP/AlP modulated superlattices

Japanese Journal of Applied Physics, 1996-08, Vol.35 (8A), p.L956-L959

1996

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Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices

Journal of applied physics, 1993-10, Vol.74 (8), p.5033-5037

1993

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Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6B), p.3810-3813

1997

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TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy

Japanese Journal of Applied Physics, 1997-06, Vol.36 (6A), p.L665-L667

1997

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In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic

Japanese Journal of Applied Physics, 1996-07, Vol.35 (7), p.3814-3818

1996

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Phonon behavior and interfacial stress in the strained (InAs) m/(GaAs) n ultrathin superlattices

Journal of crystal growth, 1995, Vol.150 (1-4), p.513-517

1995

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Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices

Japanese Journal of Applied Physics, 1996-11, Vol.35 (11A), p.L1391

1996

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Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures

Japanese Journal of Applied Physics, 1996-06, Vol.35 (6B), p.3743-3748

1996

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Improved growth kinetic model for metalorganic molecular beam epitaxy using triethylgallium

Japanese Journal of Applied Physics, 1993-06, Vol.32 (6A), p.2786-2793

1993

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Possibility for the discrimination of submonolayer InAs and GaAs grown on tilted GaAs substrate

Japanese Journal of Applied Physics, 1996-03, Vol.35 (3B), p.L362-L365

1996

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MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine

Journal of crystal growth, 1991-05, Vol.111 (1), p.638-642

1991

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Characterization of hydrogenated amorphous boron films prepared by electron cyclotron resonance plasma chemical vapor deposition method

Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures

Degradation and intensity fluctuations in CW AlGaAs double-heterostructure junction lasers

Radiation hardnessin InGaAsP lasers

Very-low-pressure deposition by electron cyclotron resonance plasma chemical vapor deposition method

Gas source molecular beam epitaxy growth of GaN on C-, A-, R- and M-plane sapphire and silica glass substrates

High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

New III-V compound semiconductors TlInGaP for 0.9 μm to over 10 μm wavelength range laser diodes and their first successful growth

Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers

Gas source molecular beam epitaxial growth of GaN1-xPx (x ≤ 0.015) using ion-removed electron cyclotron resonance radical cell

Very low resistance ohmic contacts to n-GaN

Preparation and structure of carbon film deposited by a mass-separated C+ ion beam

Scanning tunneling microscopy/spectroscopy study of self-organized quantum dot structures formed in GaP/InP short-period superlattices

Analysis of intensity fluctuations in a junction laser with low quantum-efficiency regions

Photoluminescence wavelength dependence on layer structure of GaP/AlP modulated superlattices

Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices

Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy

TlGaP layers grown on GaAs substrates by gas source molecular beam epitaxy

In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic

Phonon behavior and interfacial stress in the strained (InAs) m/(GaAs) n ultrathin superlattices

Substrate orientation dependence of optical properties of GaP/AlP short-period superlattices

Scanning tunneling microscopy/scanning tunneling spectroscopy observation of III-V compound semiconductor nanostructures

Improved growth kinetic model for metalorganic molecular beam epitaxy using triethylgallium

Possibility for the discrimination of submonolayer InAs and GaAs grown on tilted GaAs substrate

MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine

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