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Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide–Polysilicon Structures

Journal of communications technology & electronics, 2023-09, Vol.68 (9), p.1002-1005

2023

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Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor

Journal of communications technology & electronics, 2022-12, Vol.67 (Suppl 1), p.S115-S118

2022

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Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages

Semiconductors (Woodbury, N.Y.), 2021-01, Vol.55 (1), p.21-24

2021

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Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.465-468

2019

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On the Potential Profile of Ultrathin (Tunneling Transparent) Insulating Layers

IEEE transactions on electron devices, 2024-10, Vol.71 (10), p.6067-6072

2024

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On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels

Journal of communications technology & electronics, 2019-10, Vol.64 (10), p.1149-1151

2019

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Conductivity of Metal–Dielectric–Semiconductor Structures Based on Ferroelectric Films

Physics of the solid state, 2020, Vol.62 (1), p.164-167

2020

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On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.85-88

2019

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Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State

Physics of the solid state, 2020-08, Vol.62 (8), p.1380-1385

2020

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Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements

Semiconductors (Woodbury, N.Y.), 2019-01, Vol.53 (1), p.42-45

2019

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Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

Semiconductors (Woodbury, N.Y.), 2017-09, Vol.51 (9), p.1136-1140

2017

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OPYT PRIMENENIYa PROFILAKTIChESKOY DOZY ALENDRONATA (FOSAMAKS 35 mg) DLYa LEChENIYa OSTEOPOROZA u zhenshchin v postmenopauzes subklinicheskim tireotoksikozom

Osteoporoz i osteopatii, 2007-04, Vol.10 (1), p.12-19

2007

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Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

Semiconductors (Woodbury, N.Y.), 2006-10, Vol.40 (10), p.1178-1187

Gol’dman, E. I.

2006

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Electron-ion exchange at the insulator-semiconductor interfaces and its influence on ion transport in the insulating layer

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (8), p.945-954

Gol’dman, E. I.

2000

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Ultrathin

Journal of communications technology & electronics, 2022-12, Vol.67 (Suppl 1), p.S115

2022

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The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures

Радиотехника и электроника, 2023-09, Vol.68 (9), p.917-920

2023

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Electrophysical Properties Investigation of Ba.sub.0.8Sr.sub.0.2TiO.sub.3 Ferroelectric Films in Paraelectric State

Physics of the solid state, 2020-08, Vol.62 (8), p.1380

2020

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A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

Technical physics letters, 2000-01, Vol.26 (1), p.19-20

2000

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The Lung Microbiome: New Principles for Respiratory Bacteriology in Health and Disease

PLoS pathogens, 2015-07, Vol.11 (7), p.e1004923-e1004923

2015

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Ion transfer processes in an insulating layer containing traps

Semiconductors (Woodbury, N.Y.), 1997-01, Vol.31 (1), p.36-40

Gol’dman, E. I.

1997

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On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (6), p.650-654

2000

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Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

Semiconductors (Woodbury, N.Y.), 1999-08, Vol.33 (8), p.877-882

1999

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Oral bacteria and cancer

PLoS pathogens, 2014-03, Vol.10 (3), p.e1003933-e1003933

2014

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Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

Semiconductors (Woodbury, N.Y.), 2000-01, Vol.34 (3), p.277-283

2000

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Untangling the Diverse and Redundant Mechanisms of Staphylococcus aureus Biofilm Formation

PLoS pathogens, 2016-07, Vol.12 (7), p.e1005671-e1005671

2016

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Franz–Keldysh Effect in Silicon–Ultrafine (3.7 nm) Oxide–Polysilicon Structures

Ultrathin (3.7 nm) Silicon Oxide Layers with a Low Concentration of Broken Bonds on the Contact with a Semiconductor

Silicon Ultrathin Oxide (4.2 nm)–Polysilicon Structures Resistant to Field Damages

Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures

On the Potential Profile of Ultrathin (Tunneling Transparent) Insulating Layers

On the Influence of Ionic Polarization of Transistor Si-Structures on the Conductivity of p-Type Channels

Conductivity of Metal–Dielectric–Semiconductor Structures Based on Ferroelectric Films

On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect

Electrophysical Properties Investigation of Ba0.8Sr0.2TiO3 Ferroelectric Films in Paraelectric State

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements

Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures

OPYT PRIMENENIYa PROFILAKTIChESKOY DOZY ALENDRONATA (FOSAMAKS 35 mg) DLYa LEChENIYa OSTEOPOROZA u zhenshchin v postmenopauzes subklinicheskim tireotoksikozom

Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

Electron-ion exchange at the insulator-semiconductor interfaces and its influence on ion transport in the insulating layer

Ultrathin

The Franz-Keldysh effect in silicon–ultrathin (3.7 nm) oxide–polysilicon structures

Electrophysical Properties Investigation of Ba.sub.0.8Sr.sub.0.2TiO.sub.3 Ferroelectric Films in Paraelectric State

A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

The Lung Microbiome: New Principles for Respiratory Bacteriology in Health and Disease

Ion transfer processes in an insulating layer containing traps

On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

Oral bacteria and cancer

Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

Untangling the Diverse and Redundant Mechanisms of Staphylococcus aureus Biofilm Formation

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