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Analysis of Ge segregation in Si using a simultaneous growth and exchange model

Surface science, 1998, Vol.395 (1), p.60-68

1998

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Modeling of Ge segregation in the limits of zero and infinite surface diffusion

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-05, Vol.15 (3), p.976-980

1997

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Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy

Applied physics letters, 1994-08, Vol.65 (6), p.711-713

1994

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Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Surface science, 1995-07, Vol.334 (1), p.29-38

1995

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Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy

Applied physics letters, 1993-09, Vol.63 (10), p.1381-1383

1993

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Stress and its effect on the interdiffusion in Si1-xGex/Si superlattices

Applied physics letters, 1992-03, Vol.60 (9), p.1087-1089

1992

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Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films

Applied physics letters, 1992-07, Vol.61 (1), p.76-78

1992

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The nucleation and growth of germanium on (11-02) sapphire deposited by molecular-beam epitaxy

Journal of applied physics, 1991-04, Vol.69 (8), p.4216-4221

1991

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Selective removal of a Si0.7Ge0.3 layer from Si(100)

Applied physics letters, 1991-04, Vol.58 (17), p.1899-1901

1991

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Single-crystal germanium grown on (1102) sapphire by molecular beam epitaxy

Applied physics letters, 1989-06, Vol.54 (24), p.2449-2451

1989

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Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop

Journal of the Electrochemical Society, 1990-10, Vol.137 (10), p.3219-3223

1990

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Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

Applied physics letters, 1992-11, Vol.61 (18), p.2217-2219

1992

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Copper diffusion in organic polymer resists and inter-level dielectrics

Thin solid films, 1997-10, Vol.308, p.470-474

1997

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A study of broad band photoluminescence from Si1-xGex/Si superlattices

Journal of crystal growth, 1993-02, Vol.127 (1-4), p.472-475

1993

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The hydrogenolysis of ethane over RePt(111) and PtRe(0001) bimetallic crystal surfaces

Journal of catalysis, 1989-05, Vol.117 (1), p.144-154

1989

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Low-temperature cleaning processes for Si molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-05, Vol.11 (3), p.1077-1082

1993

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Sb surface segregation during heavy doping of Si(100) grown at low temperature by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-05, Vol.11 (3), p.1115-1119

1993

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Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxy

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-05, Vol.11 (3), p.1120-1123

1993

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Concentration dependence of Ge segregation during the growth of a SiGe buried layer

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1993-07, Vol.11 (4), p.1392-1395

1993

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Distribution of Ge in O+ implanted silicon

Applied physics letters, 1992-12, Vol.61 (26), p.3142-3144

1992

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The preparation and characterization of rhenium modified Pt(111) and Pt(100), and platinum modified Re(0001) single crystal surfaces

Surface science, 1988-08, Vol.202 (1), p.204-226

1988

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Interfacial point defects in heavily implanted silicon germanium alloys

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992-07, Vol.10 (4), p.2026-2029

1992

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Photoluminescence and optically detected magnetic resonance of Si/Si1-xGex strained-layer superlattices grown by molecular-beam epitaxy

Physical review. B, Condensed matter, 1993-01, Vol.47 (3), p.1305-1315

1993

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Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyrene

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-01, Vol.17 (1), p.90-94

1999

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Stress and its effect on the interdiffusion in Si(1-x)Ge(x)/Si superlattices

Applied physics letters, 1992-03, Vol.60, p.1087-1089

1992

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Analysis of Ge segregation in Si using a simultaneous growth and exchange model

Modeling of Ge segregation in the limits of zero and infinite surface diffusion

Ge surface segregation at low temperature during SiGe growth by molecular beam epitaxy

Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxy

Stress and its effect on the interdiffusion in Si1-xGex/Si superlattices

Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films

The nucleation and growth of germanium on (11-02) sapphire deposited by molecular-beam epitaxy

Selective removal of a Si0.7Ge0.3 layer from Si(100)

Single-crystal germanium grown on (1102) sapphire by molecular beam epitaxy

Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop

Ge profile from the growth of SiGe buried layers by molecular beam epitaxy

Copper diffusion in organic polymer resists and inter-level dielectrics

A study of broad band photoluminescence from Si1-xGex/Si superlattices

The hydrogenolysis of ethane over RePt(111) and PtRe(0001) bimetallic crystal surfaces

Low-temperature cleaning processes for Si molecular beam epitaxy

Sb surface segregation during heavy doping of Si(100) grown at low temperature by molecular beam epitaxy

Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxy

Concentration dependence of Ge segregation during the growth of a SiGe buried layer

Distribution of Ge in O+ implanted silicon

The preparation and characterization of rhenium modified Pt(111) and Pt(100), and platinum modified Re(0001) single crystal surfaces

Interfacial point defects in heavily implanted silicon germanium alloys

Photoluminescence and optically detected magnetic resonance of Si/Si1-xGex strained-layer superlattices grown by molecular-beam epitaxy

Vapor deposition polymerization of 4-fluorostyrene and pentafluorostyrene

Stress and its effect on the interdiffusion in Si(1-x)Ge(x)/Si superlattices

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