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3-D NAND Technology Achievements and Future Scaling Perspectives

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1373-1381

Goda, Akira

2020

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Recent Progress on 3D NAND Flash Technologies

Electronics (Basel), 2021-12, Vol.10 (24), p.3156

Goda, Akira

2021

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Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays

IEEE electron device letters, 2018-08, Vol.39 (8), p.1175-1178

2018

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A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.861-869

2022

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The small GTPases Rab9A and Rab23 function at distinct steps in autophagy during Group A Streptococcus infection

Cellular microbiology, 2012-08, Vol.14 (8), p.1149-1165

2012

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Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1737-1744

2024

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Extreme Short-Channel Effect on RTS and Inverse Scaling Behavior: Source-Drain Implantation Effect in 25-nm nand Flash Memory

IEEE electron device letters, 2011-09, Vol.32 (9), p.1185-1187

2011

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Reviewing the Evolution of the NAND Flash Technology

Proceedings of the IEEE, 2017-09, Vol.105 (9), p.1609-1633

2017

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Reliability of 3D NAND Flash for Future Storage Systems (Invited)

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-10

2023

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Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays

IEEE electron device letters, 2017-04, Vol.38 (4), p.461-464

2017

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Inter Spike Interval and Stochasticity Engineering of Floating Gate Technology-based Neurons for Spiking Neural Network Hardware

2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2022, p.129-131

2022

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Active Microbiota Show Specific Correlationships in Peri-implantitis and Periodontitis

Kōkūbyō Gakkai Zasshi, 2017-03, Vol.84 (1), p.25-36

2017

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Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part II: Random Telegraph Noise

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3207-3213

2018

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Scaling directions for 2D and 3D NAND cells

2012 International Electron Devices Meeting, 2012, p.2.1.1-2.1.4

2012

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Fitting Cells Into a Narrow [Formula Omitted] Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

IEEE transactions on electron devices, 2015-05, Vol.62 (5)

2015

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A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.11-16

2011

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First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

IEEE electron device letters, 2015-02, Vol.36 (2), p.132-134

2015

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Fitting Cells Into a Narrow V Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1491-1497

2015

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Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

IEEE electron device letters, 2015-07, Vol.36 (7), p.678-680

2015

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Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution

IEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2360-2366

2016

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Growth of polar NaCl(111) surface on GaAs(lll) substrates

Japanese Journal of Applied Physics, 1997-01, Vol.36 (1AB), p.L55-L57

1997

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Tunnel Oxide Nitridation Effect on the Evolution of V t Instabilities (RTS/QED) and Defect Characterization for Sub-40-nm Flash Memory

IEEE electron device letters, 2011-08, Vol.32 (8), p.999-1001

2011

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Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays

2015 IEEE International Reliability Physics Symposium, 2015, p.MY.9.1-MY.9.6

2015

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Tunnel Oxide Nitridation Effect on the Evolution of Vt Instabilities (RTS/QED) and Defect Characterization for Sub-40-nm Flash Memory

IEEE electron device letters, 2011-08, Vol.32 (8), p.999-1001

2011

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Revealing Unique Scaling Effects of Random Telegraph Noise and Electron Injection Stochasticity in Stochastic Resonance with Floating Gate-based Neurons

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

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3-D NAND Technology Achievements and Future Scaling Perspectives

Recent Progress on 3D NAND Flash Technologies

Impact of Cycling on Random Telegraph Noise in 3-D NAND Flash Arrays

A Stochastic Leaky-Integrate-and-Fire Neuron Model With Floating Gate-Based Technology for Fast and Accurate Population Coding

The small GTPases Rab9A and Rab23 function at distinct steps in autophagy during Group A Streptococcus infection

Stochastic Resonance Modeling of Floating Gate-Based Neurons in Summing Networks for Accurate and Energy-Efficient Operations

Extreme Short-Channel Effect on RTS and Inverse Scaling Behavior: Source-Drain Implantation Effect in 25-nm nand Flash Memory

Reviewing the Evolution of the NAND Flash Technology

Reliability of 3D NAND Flash for Future Storage Systems (Invited)

Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays

Inter Spike Interval and Stochasticity Engineering of Floating Gate Technology-based Neurons for Spiking Neural Network Hardware

Active Microbiota Show Specific Correlationships in Peri-implantitis and Periodontitis

Characterization and Modeling of Temperature Effects in 3-D NAND Flash Arrays-Part II: Random Telegraph Noise

Scaling directions for 2D and 3D NAND cells

Fitting Cells Into a Narrow [Formula Omitted] Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

Fitting Cells Into a Narrow V Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

Random Telegraph Noise-Induced Sensitivity of Data Retention to Cell Position in the Programmed Distribution of NAND Flash Memory Arrays

Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution

Growth of polar NaCl(111) surface on GaAs(lll) substrates

Tunnel Oxide Nitridation Effect on the Evolution of V t Instabilities (RTS/QED) and Defect Characterization for Sub-40-nm Flash Memory

Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND flash arrays

Tunnel Oxide Nitridation Effect on the Evolution of Vt Instabilities (RTS/QED) and Defect Characterization for Sub-40-nm Flash Memory

Revealing Unique Scaling Effects of Random Telegraph Noise and Electron Injection Stochasticity in Stochastic Resonance with Floating Gate-based Neurons

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