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Photonic band structure : the face-centered-cubic case employing nonspherical atoms

Physical review letters, 1991-10, Vol.67 (17), p.2295-2298

1991

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Photonic band structure: the face-centered-cubic case

Physical review letters, 1989-10, Vol.63 (18), p.1950-1953

1989

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30% external quantum efficiency from surface textured, thin-film light-emitting diodes

Applied physics letters, 1993-10, Vol.63 (16), p.2174-2176

1993

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Donor and acceptor modes in photonic band structure

Physical review letters, 1991-12, Vol.67 (24), p.3380-3383

1991

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Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

Applied physics letters, 1993-01, Vol.62 (2), p.131-133

1993

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Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures

Physical review letters, 1988-11, Vol.61 (22), p.2546-2549

1988

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Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

Applied physics letters, 1990-06, Vol.56 (24), p.2419-2421

1990

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Photonic band structure: the face-centered-cubic case

Journal of the Optical Society of America. A, Optics, image science, and vision, 1990-09, Vol.7 (9), p.1792

1990

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Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond

Applied physics letters, 1991-12, Vol.59 (24), p.3159-3161

1991

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Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

Applied physics letters, 1989-02, Vol.54 (6), p.555-557

1989

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Contactless electrical characterization and realization of p-type ZnSe

Journal of applied physics, 1991-07, Vol.70 (2), p.1033-1035

1991

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Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces

Applied physics letters, 1992-01, Vol.60 (3), p.371-373

1992

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As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors

Applied physics letters, 1990-11, Vol.57 (21), p.2241-2243

1990

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Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells

Applied physics letters, 1988-03, Vol.52 (12), p.1002-1004

1988

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Generation of subpicosecond high-power optical pulses from a hybrid mode-locked semiconductor laser

Optics letters, 1990-12, Vol.15 (23), p.1371

1990

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Ge redistribution in solid-phase Ge/Pd/GaAs ohmic contact formation

Journal of applied physics, 1990-01, Vol.67 (1), p.334-339

1990

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Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP

Applied physics letters, 1992-03, Vol.60 (9), p.1123-1125

1992

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Grafted semiconductor optoelectronics

IEEE journal of quantum electronics, 1991-03, Vol.27 (3), p.717-725

1991

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High-speed InP/GaInAs photodiode on sapphire substrate

Electronics letters, 1989-11, Vol.25 (24), p.1653-1654

1989

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DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

Electronics letters, 1990, Vol.26 (22), p.1865-1866

1990

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GaInAs/InP pin photodetectors integrated with glass waveguides

Electronics letters, 1991, Vol.27 (1), p.87-89

1991

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Grafted InGaAsP light emitting diodes on glass channel waveguides

Electronics letters, 1992, Vol.28 (4), p.341-342

1992

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Surface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors

Applied physics letters, 1990-11, Vol.57 (20), p.2113-2115

1990

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Channel glass waveguide detectors with grafted GaAs film in embedded configuration

Electronics letters, 1991-02, Vol.27 (5), p.410-412

1991

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Inverted gate GaAs mesfet by epitaxial liftoff

Electronics letters, 1992, Vol.28 (8), p.708-709

1992

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Photonic band structure : the face-centered-cubic case employing nonspherical atoms

Photonic band structure: the face-centered-cubic case

30% external quantum efficiency from surface textured, thin-film light-emitting diodes

Donor and acceptor modes in photonic band structure

Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures

Inhibited and enhanced spontaneous emission from optically thin AlGaAs/GaAs double heterostructures

Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates

Photonic band structure: the face-centered-cubic case

Van der Waals bonding of GaAs on Pd leads to a permanent, solid-phase-topotaxial, metallurgical bond

Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces

Contactless electrical characterization and realization of p-type ZnSe

Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces

As2S3/GaAs, a new amorphous/crystalline heterojunction for the III-V semiconductors

Nearly ideal electronic surfaces on naked In0.53Ga0.47As quantum wells

Generation of subpicosecond high-power optical pulses from a hybrid mode-locked semiconductor laser

Ge redistribution in solid-phase Ge/Pd/GaAs ohmic contact formation

Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP

Grafted semiconductor optoelectronics

High-speed InP/GaInAs photodiode on sapphire substrate

DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

GaInAs/InP pin photodetectors integrated with glass waveguides

Grafted InGaAsP light emitting diodes on glass channel waveguides

Surface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors

Channel glass waveguide detectors with grafted GaAs film in embedded configuration

Inverted gate GaAs mesfet by epitaxial liftoff

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