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Effect of doping on electron traps in metalorganic molecular-beam epitaxial GaxIn1-xP/GaAs heterostructures

Applied physics letters, 1991-12, Vol.59 (24), p.3127-3129

1991

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Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy

Applied physics letters, 1992-06, Vol.60 (22), p.2749-2751

1992

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Surface modification of a-SiC thin films with ex-situ hydrogenation

Solid state communications, 1995-12, Vol.96 (10), p.735-738

1995

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Schottky diode and field-effect transistor on InP

Applied physics letters, 1989-03, Vol.54 (13), p.1238-1240

1989

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Microstructural characterization of stoichiometric buried Si3N4 films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-06, Vol.113 (1-4), p.227-230

1996

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Optical properties of thin SiC films: Surface modification by ex-situ hydrogenation

Solid state communications, 1996, Vol.99 (1), p.29-33

1996

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Structural study of InxGa1-xP/GaAs interfaces grown by MOMBE

Semiconductor science and technology, 1992-01, Vol.7, p.A127

1992

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Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs

MRS proceedings, 1995, Vol.378, p.459-464, Article 459

1995

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Performance of Ga x In1− x P/GaAs heterojunctions grown by metal-organic molecular-beam epitaxy and metal-organic vapor-phase epitaxy

Journal of applied physics, 1994-03, Vol.75 (6), p.2980-2987

1994

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Structural and Electrical Properties of the Ga 0.68 in 0.32 P / GaAs Heterojunction Grown by Mombe

Materials science forum, 1993-01, Vol.126-128, p.579-582

1993

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Effect of doping on electron traps in metalorganic molecular-beam epitaxial Ga x In1− x P/GaAs heterostructures

Applied physics letters, 1991-12, Vol.59 (24), p.3127-3129

1991

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Deep level analysis of undoped Ga x In 1- x P/GaAs single heterojunctions grown by MOMBE and MOVPE

Sensors and actuators. A. Physical., 1992, Vol.33 (1), p.63-66

1992

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High Performance Schottky Diode and FET on InP

ESSDERC '88: 18th European Solid State Device Research Conference, 1988-09, Vol.49 (C4), p.c4-217-c4-221

1988

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Low-temperature dc characteristics of S- and Si-doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

Applied physics letters, 1992-06, Vol.60 (25), p.3162-3164

1992

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Microstructural characterization of stoichiometric buried Si 3N 4 films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996, Vol.113 (1), p.227-230

1996

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Electrical and structural properties of Ga sub(0.51)In sub(0.49)P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy

Applied physics letters, 1992-01, Vol.60 (22), p.2749-2751

1992

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Deep level analysis of undoped Gax In1-x P/GaAs single heterojunctions grown by MOMBE and MOVPE

Sensors and actuators. A. Physical., 1992-05, Vol.33 (1-2), p.63-66

1992

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On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga0.51In0.49P/GaAs Heterostructures Grown by Mombe

MRS proceedings, 1992, Vol.281

1992

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On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga 0.51 In 0.49 P/GaAs Heterostructures Grown by Mombe

MRS proceedings, 1992, Vol.281, Article 55

1992

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Low-temperature dc characteristics of S- and Si-doped Ga(0.51)In(0.4)9P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

Applied physics letters, 1992-06, Vol.60 (25), p.3162-3164

1992

Volltextzugriff (PDF)

Deep level analysis of undoped GaxIn1-xP/GaAs single heterojunctions grown by MOMBE and MOVPE

Sensors and actuators. A, Physical, 1992, Vol.33 (1-2), p.63-66

1992

Volltextzugriff (PDF)

Low-temperature dc characteristics of S- and Si-doped Ga0.51In0.49P/GaAs high electron mobility transitors grown by metalorganic beam epitaxy

Applied physics letters, 1992, Vol.60 (25), p.3162-3164

1992

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Structural study of In x Ga 1-x P/GaAs interfaces grown by MOMBE

Semiconductor science and technology, 1992-01, Vol.7 (1A), p.A127-A130

1992

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Coupled Two Dimensional Electron Gas Structures in the G1−xAlxAs/GaAs System

MRS proceedings, 1986, Vol.77

1986

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Coupled Two Dimensional Electron Gas Structures in the G 1−x Al x As/GaAs System

MRS proceedings, 1986, Vol.77, Article 443

1986

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Effect of doping on electron traps in metalorganic molecular-beam epitaxial GaxIn1-xP/GaAs heterostructures

Electrical and structural properties of Ga0.51In0.49P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy

Surface modification of a-SiC thin films with ex-situ hydrogenation

Schottky diode and field-effect transistor on InP

Microstructural characterization of stoichiometric buried Si3N4 films

Optical properties of thin SiC films: Surface modification by ex-situ hydrogenation

Structural study of InxGa1-xP/GaAs interfaces grown by MOMBE

Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs

Performance of Ga x In1− x P/GaAs heterojunctions grown by metal-organic molecular-beam epitaxy and metal-organic vapor-phase epitaxy

Structural and Electrical Properties of the Ga 0.68 in 0.32 P / GaAs Heterojunction Grown by Mombe

Effect of doping on electron traps in metalorganic molecular-beam epitaxial Ga x In1− x P/GaAs heterostructures

Deep level analysis of undoped Ga x In 1- x P/GaAs single heterojunctions grown by MOMBE and MOVPE

High Performance Schottky Diode and FET on InP

Low-temperature dc characteristics of S- and Si-doped Ga0.51In0.49P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

Microstructural characterization of stoichiometric buried Si 3N 4 films

Electrical and structural properties of Ga sub(0.51)In sub(0.49)P/GaAs heterojunctions grown by metalorganic vapor-phase epitaxy

Deep level analysis of undoped Gax In1-x P/GaAs single heterojunctions grown by MOMBE and MOVPE

On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga0.51In0.49P/GaAs Heterostructures Grown by Mombe

On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga 0.51 In 0.49 P/GaAs Heterostructures Grown by Mombe

Low-temperature dc characteristics of S- and Si-doped Ga(0.51)In(0.4)9P/GaAs high electron mobility transistors grown by metalorganic molecular beam epitaxy

Deep level analysis of undoped GaxIn1-xP/GaAs single heterojunctions grown by MOMBE and MOVPE

Low-temperature dc characteristics of S- and Si-doped Ga0.51In0.49P/GaAs high electron mobility transitors grown by metalorganic beam epitaxy

Structural study of In x Ga 1-x P/GaAs interfaces grown by MOMBE

Coupled Two Dimensional Electron Gas Structures in the G1−xAlxAs/GaAs System

Coupled Two Dimensional Electron Gas Structures in the G 1−x Al x As/GaAs System

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