UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Advanced materials (Weinheim), 2013-03, Vol.25 (10), p.1474-1478

2013

Volltextzugriff (PDF)

Analysis of the relative frequencies of the multipartite BNYVV genomic RNAs in different plants and tissues

Journal of general virology, 2024-01, Vol.105 (1)

2024

Volltextzugriff (PDF)

Offre de formation en virologie moléculaire, Université de Strasbourg

Virologie (Montrouge, France), 2018-07

Gilmer, D.

2018

Volltextzugriff (PDF)

NRAM: a disruptive carbon-nanotube resistance-change memory

Nanotechnology, 2018-04, Vol.29 (13), p.134003-134003

2018

Volltextzugriff (PDF)

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Applied physics letters, 2012-03, Vol.100 (12)

2012

Volltextzugriff (PDF)

Varied Movement Strategies Employed by Triple Gene Block–Encoding Viruses

Molecular plant-microbe interactions, 2010-10, Vol.23 (10), p.1231-1247

2010

Volltextzugriff (PDF)

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Microelectronic engineering, 2013-09, Vol.109, p.75-78

2013

Volltextzugriff (PDF)

Metal oxide resistive memory switching mechanism based on conductive filament properties

Journal of applied physics, 2011-12, Vol.110 (12), p.124518-124518-12

2011

Volltextzugriff (PDF)

The Benyvirus RNA Silencing Suppressor Is Essential for Long-Distance Movement, Requires Both Zinc-Finger and NoLS Basic Residues but Not a Nucleolar Localization for Its Silencing-Suppression Activity

Molecular plant-microbe interactions, 2013-02, Vol.26 (2), p.168-181

2013

Volltextzugriff (PDF)

Evaluation of Caffeine Degradation by Sequential Coupling of TiO2/O3/H2O2/UV Processes

Topics in catalysis, 2020, Vol.63 (11-14), p.1361-1373

2020

Volltextzugriff (PDF)

Virus Taxonomy Profile : Benyviridae

Journal of general virology, 2017, Vol.98 (7), p.1571-1572

Gilmer, D.

2017

Volltextzugriff (PDF)

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

IEEE electron device letters, 2009-03, Vol.30 (3), p.216-218

2009

Volltextzugriff (PDF)

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Applied physics letters, 2014-04, Vol.104 (16)

2014

Volltextzugriff (PDF)

Beet soil-borne mosaic virus RNA-3 is replicated and encapsidated in the presence of BNYVV RNA-1 and -2 and allows long distance movement in Beta macrocarpa

Virology (New York, N.Y.), 2009-03, Vol.385 (2), p.392-399

2009

Volltextzugriff (PDF)

Étiologie de la rhizomanie de la betterave sucrière

Virologie (Montrouge, France), 2007-11, Vol.11 (6), p.409-421

2007

Volltextzugriff (PDF)

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

Microelectronic engineering, 2007-09, Vol.84 (9), p.2196-2200

2007

Volltextzugriff (PDF)

Titanium dioxide (TiO 2 )-based gate insulators

IBM journal of research and development, 1999-05, Vol.43 (3), p.383-392

1999

Volltextzugriff (PDF)

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-4

2020

Volltextzugriff (PDF)

Sequence variation within Beet necrotic yellow vein virus p25 protein influences its oligomerization and isolate pathogenicity on Tetragonia expansa

Virus research, 2007-06, Vol.126 (1), p.53-61

2007

Volltextzugriff (PDF)

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.70-77

2013

Volltextzugriff (PDF)

Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics

Journal of applied physics, 2007-01, Vol.101 (1)

2007

Volltextzugriff (PDF)

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.978-984

2004

Volltextzugriff (PDF)

Conductive filament structure in HfO2 resistive switching memory devices

Solid-state electronics, 2015-09, Vol.111, p.161-165

2015

Volltextzugriff (PDF)

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

Chemical vapor deposition, 2006-03, Vol.12 (2-3), p.158-164

2006

Volltextzugriff (PDF)

Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Applied physics letters, 2012-03, Vol.100 (12), p.123508-123508-4

2012

Volltextzugriff (PDF)

1 – 25 von 676

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(514)
Mit Volltextzugriff
(551)

Publikationsform

2 weitere anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(408)
Life Sciences & Biomedicine
(246)
Humans
(147)
Physical Sciences
(113)
Technology
(110)
Physics
(98)
Biological And Medical Sciences
(87)
Female
(79)
Materials Science
(64)
Physics, Applied
(64)
Engineering
(63)
Male
(63)
Engineering, Electrical & Electronic
(52)
Medical Sciences
(49)
Adult
(45)
Animals
(43)
Middle Aged
(41)
Fundamental And Applied Biological Sciences. Psychology
(40)
Adolescent
(38)
Exact Sciences And Technology
(37)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Analysis of the relative frequencies of the multipartite BNYVV genomic RNAs in different plants and tissues

Offre de formation en virologie moléculaire, Université de Strasbourg

NRAM: a disruptive carbon-nanotube resistance-change memory

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Varied Movement Strategies Employed by Triple Gene Block–Encoding Viruses

Microscopy study of the conductive filament in HfO2 resistive switching memory devices

Metal oxide resistive memory switching mechanism based on conductive filament properties

The Benyvirus RNA Silencing Suppressor Is Essential for Long-Distance Movement, Requires Both Zinc-Finger and NoLS Basic Residues but Not a Nucleolar Localization for Its Silencing-Suppression Activity

Evaluation of Caffeine Degradation by Sequential Coupling of TiO2/O3/H2O2/UV Processes

Virus Taxonomy Profile : Benyviridae

Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer

Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

Beet soil-borne mosaic virus RNA-3 is replicated and encapsidated in the presence of BNYVV RNA-1 and -2 and allows long distance movement in Beta macrocarpa

Étiologie de la rhizomanie de la betterave sucrière

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

Titanium dioxide (TiO 2 )-based gate insulators

Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions

Sequence variation within Beet necrotic yellow vein virus p25 protein influences its oligomerization and isolate pathogenicity on Tetragonia expansa

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics

Fermi-level pinning at the polysilicon/metal-oxide interface-Part II

Conductive filament structure in HfO2 resistive switching memory devices

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum-Aluminum Oxide Films

Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Suchergebnisse filtern