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Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

IEEE electron device letters, 2010-04, Vol.31 (4), p.350-352

2010

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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Nanotechnology, 2010-03, Vol.21 (10), p.105701-105701

2010

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Two-dimensional photonic crystals with pure germanium-on-insulator

Optics communications, 2008-02, Vol.281 (4), p.846-850

2008

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Realization and characterization of thin single crystal Ge films on sapphire

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35013

2013

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The generic nature of the Smart-Cut® process for thin film transfer

Journal of electronic materials, 2001-07, Vol.30 (7), p.834-840

2001

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Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body

Microelectronics and reliability, 2012-11, Vol.52 (11), p.2602-2608

2012

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Improved GeOI substrates for pMOSFET off-state leakage control

Microelectronic engineering, 2009-07, Vol.86 (7), p.1585-1588

2009

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Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates

IEEE journal of selected topics in quantum electronics, 2004-07, Vol.10 (4), p.694-701

2004

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Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities

Thin solid films, 2008-11, Vol.517 (1), p.121-124

2008

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Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

Microelectronic engineering, 2011-07, Vol.88 (7), p.1265-1268

2011

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Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies

Solid-state electronics, 2011-05, Vol.59 (1), p.8-12

2011

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Stress Hybridization for Multigate Devices Fabricated on Supercritical Strained-SOI (SC-SSOI)

IEEE electron device letters, 2007-07, Vol.28 (7), p.646-648

2007

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Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology

MRS proceedings, 2004, Vol.809, Article B4.4

2004

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Strain engineering in SOI-type materials for future technologies

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.16-23

Ghyselen, Bruno

2005

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Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements

Microelectronic engineering, 2005-06, Vol.80, p.241-244

2005

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Piezoresponse Force Microscopy study of a single-crystal LiTaO3 thin film obtained by the Smart Cut™ technology

2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), 2010, p.1-4

2010

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Papers from the 3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, USA, 15–17 May 2006) (ISTDM 2006)

Semiconductor science and technology, 2007-01, Vol.22 (1)

2007

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Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs

Solid-state electronics, 2006-04, Vol.50 (4), p.566-572

2006

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Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Journal of applied physics, 2008-08, Vol.104 (4), p.044908-044908-7

2008

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New layer transfers obtained by the SmartCut process

Journal of electronic materials, 2003-08, Vol.32 (8), p.829-835

2003

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Direct Bonding of Silicon to Platinum

Journal of the Electrochemical Society, 2011-01, Vol.158 (3), p.H255

2011

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Strain characterization of strained silicon on insulator wafers

Microelectronic engineering, 2004-04, Vol.72 (1), p.367-373

2004

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Crystallographic orientation engineering in silicon-on-insulator substrates

Applied physics letters, 2010-06, Vol.96 (26), p.262111-262111-3

2010

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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

Materials science forum, 2002-04, Vol.389-393, p.343-346

2002

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QuaSiC Smart-Cut® Substrates for SiC High Power Devices

Materials science forum, 2002-04, Vol.389-393, p.151-154

2002

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Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts

Two-dimensional photonic crystals with pure germanium-on-insulator

Realization and characterization of thin single crystal Ge films on sapphire

The generic nature of the Smart-Cut® process for thin film transfer

Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body

Improved GeOI substrates for pMOSFET off-state leakage control

Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates

Germanium-based nanophotonic devices: Two-dimensional photonic crystals and cavities

Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies

Stress Hybridization for Multigate Devices Fabricated on Supercritical Strained-SOI (SC-SSOI)

Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology

Strain engineering in SOI-type materials for future technologies

Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements

Piezoresponse Force Microscopy study of a single-crystal LiTaO3 thin film obtained by the Smart Cut™ technology

Papers from the 3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, USA, 15–17 May 2006) (ISTDM 2006)

Performance and physics of sub-50 nm strained Si on Si1-xGex-on-insulator (SGOI) nMOSFETs

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

New layer transfers obtained by the SmartCut process

Direct Bonding of Silicon to Platinum

Strain characterization of strained silicon on insulator wafers

Crystallographic orientation engineering in silicon-on-insulator substrates

Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOI

QuaSiC Smart-Cut® Substrates for SiC High Power Devices

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