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Modeling of access resistances and channel temperature estimation for GaN HEMT

Journal of thermal analysis and calorimetry, 2022-10, Vol.147 (20), p.10991-10998

2022

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Drone Detection and Tracking Using RF Identification Signals

Sensors (Basel, Switzerland), 2023-09, Vol.23 (17), p.7650

2023

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2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Microelectronic engineering, 2021-02, Vol.238, p.111508, Article 111508

2021

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Single-Channel Imaging at Low Sampling Rates

IEEE antennas and wireless propagation letters, 2024, p.1-5

2024

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An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Micromachines (Basel), 2021-05, Vol.12 (5), p.549

2021

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Design and Characterization of (140-220) GHz Frequency Compensated Power Detector

IEEE transactions on microwave theory and techniques, 2021-04, Vol.69 (4), p.2352-2356

2021

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A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

Journal of materials science. Materials in electronics, 2023-04, Vol.34 (10), p.892, Article 892

2023

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Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Physica status solidi. A, Applications and materials science, 2024-02, Vol.221 (3), p.n/a

2024

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Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5530-5535

2022

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Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

Microelectronic engineering, 2021-07, Vol.247, p.111595, Article 111595

2021

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A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications

IEEE transactions on circuits and systems. I, Regular papers, 2012-11, Vol.59 (11), p.776-779

2012

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A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology

IEEE transactions on microwave theory and techniques, 2024-03, Vol.72 (3), p.1775-1789

2024

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Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2023-08, Vol.220 (16), p.n/a

2023

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Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality

Microelectronics and reliability, 2022-12, Vol.139, p.114847, Article 114847

2022

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Design of Coupled Slow-Wave CPW Millimeter-Wave Bandpass Filter Beyond 100 GHz in 55-nm BiCMOS Technology

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4259-4266

2021

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Hole trap, leakage current and barrier inhomogeneity in (Pt/Au)Al0.2Ga0.8N/GaN heterostructures

The Journal of physics and chemistry of solids, 2019-09, Vol.132, p.157-161

2019

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Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

IEEE transactions on microwave theory and techniques, 2019-09, Vol.67 (9), p.3732-3742

2019

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Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT

IEEE transactions on computer-aided design of integrated circuits and systems, 2020-03, Vol.39 (3), p.552-559

2020

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Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

Journal of applied physics, 2011-07, Vol.110 (1), p.013701-1-6

2011

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Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

IET microwaves, antennas & propagation, 2022-06, Vol.16 (7), p.477-488

2022

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Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT

Micro and nanostructures (2022), 2024-02, Vol.186, p.207738, Article 207738

2024

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Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

IEEE transactions on microwave theory and techniques, 2020-06, Vol.68 (6), p.2268-2277

2020

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Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides

IEEE transactions on microwave theory and techniques, 2020-12, Vol.68 (12), p.5014-5028

2020

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Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT

Micro and nanostructures (2022), 2023-05, Vol.177, p.207547, Article 207547

2023

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Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

International journal of RF and microwave computer-aided engineering, 2021-02, Vol.31 (2), p.n/a

2021

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Modeling of access resistances and channel temperature estimation for GaN HEMT

Drone Detection and Tracking Using RF Identification Signals

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Single-Channel Imaging at Low Sampling Rates

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Design and Characterization of (140-220) GHz Frequency Compensated Power Detector

A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination

Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts

Estimation of channel temperature and thermal sensitivity for a 0.15 μm GaN HEMT

A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications

A G-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology

Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors

Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality

Design of Coupled Slow-Wave CPW Millimeter-Wave Bandpass Filter Beyond 100 GHz in 55-nm BiCMOS Technology

Hole trap, leakage current and barrier inhomogeneity in (Pt/Au)Al0.2Ga0.8N/GaN heterostructures

Millimeter-Wave Noise Source Development on SiGe BiCMOS 55-nm Technology for Applications up to 260 GHz

Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components

Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT

Modeling and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology

Design of mm-Wave Slow-Wave-Coupled Coplanar Waveguides

Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT

Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs

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